JPH0610683Y2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0610683Y2
JPH0610683Y2 JP1989060537U JP6053789U JPH0610683Y2 JP H0610683 Y2 JPH0610683 Y2 JP H0610683Y2 JP 1989060537 U JP1989060537 U JP 1989060537U JP 6053789 U JP6053789 U JP 6053789U JP H0610683 Y2 JPH0610683 Y2 JP H0610683Y2
Authority
JP
Japan
Prior art keywords
wire
wire bond
semiconductor device
striped pattern
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1989060537U
Other languages
English (en)
Japanese (ja)
Other versions
JPH031536U (OSRAM
Inventor
修治 片山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tottori Sanyo Electric Co Ltd
Priority to JP1989060537U priority Critical patent/JPH0610683Y2/ja
Publication of JPH031536U publication Critical patent/JPH031536U/ja
Application granted granted Critical
Publication of JPH0610683Y2 publication Critical patent/JPH0610683Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W72/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10W72/07551—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5445—
    • H10W90/754—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP1989060537U 1989-05-25 1989-05-25 半導体装置 Expired - Lifetime JPH0610683Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989060537U JPH0610683Y2 (ja) 1989-05-25 1989-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989060537U JPH0610683Y2 (ja) 1989-05-25 1989-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPH031536U JPH031536U (OSRAM) 1991-01-09
JPH0610683Y2 true JPH0610683Y2 (ja) 1994-03-16

Family

ID=31587984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989060537U Expired - Lifetime JPH0610683Y2 (ja) 1989-05-25 1989-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPH0610683Y2 (OSRAM)

Also Published As

Publication number Publication date
JPH031536U (OSRAM) 1991-01-09

Similar Documents

Publication Publication Date Title
US4316208A (en) Light-emitting semiconductor device and method of fabricating same
TWI636585B (zh) 微發光二極體陣列結構
EP0896405A3 (en) Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device
WO2013162927A9 (en) Method of forming a micro led device with self-aligned metallization stack
JPS60136788A (ja) Ｌｅｄ平面パネルデイスプレイの製作法
JPH0794782A (ja) 窒化ガリウム系化合物半導体発光素子
JP4179866B2 (ja) 半導体複合装置及びｌｅｄヘッド
CN114975699B (zh) 一种全彩氮化物半导体Micro-LED阵列的单片集成制备方法
JP2002368275A (ja) 半導体素子及びその製造方法
JPH0610683Y2 (ja) 半導体装置
JPH05100240A (ja) 液晶表示装置の実装構造
JPH08306643A (ja) ３−５族化合物半導体用電極および発光素子
JPH0531317B2 (OSRAM)
JPH01150379A (ja) 発光装置
JPH01103867A (ja) トランジスタ
TWI575722B (zh) 發光二極體元件
JP2000150958A (ja) 半導体発光素子
JP2863979B2 (ja) 半導体発光装置の製造方法
JPH08330633A (ja) 半導体発光装置
KR100463957B1 (ko) 발광 다이오드 장치를 제조하는 방법
TW543211B (en) Manufacturing method of LED having transparent conduction adhesion layer
JPH0244313Y2 (OSRAM)
JPH0613715A (ja) 端面発光素子およびその製法
JP2708829B2 (ja) 炭化ケイ素の電極形成方法
JPS59117280A (ja) 半導体発光装置