JPH0587030B2 - - Google Patents
Info
- Publication number
- JPH0587030B2 JPH0587030B2 JP16478185A JP16478185A JPH0587030B2 JP H0587030 B2 JPH0587030 B2 JP H0587030B2 JP 16478185 A JP16478185 A JP 16478185A JP 16478185 A JP16478185 A JP 16478185A JP H0587030 B2 JPH0587030 B2 JP H0587030B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- impurity
- floating gate
- operating region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16478185A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
| US06/887,625 US4774556A (en) | 1985-07-25 | 1986-07-21 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16478185A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6225459A JPS6225459A (ja) | 1987-02-03 |
| JPH0587030B2 true JPH0587030B2 (fr) | 1993-12-15 |
Family
ID=15799825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16478185A Granted JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6225459A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07120717B2 (ja) * | 1986-05-19 | 1995-12-20 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
| JPH0644632B2 (ja) * | 1987-06-29 | 1994-06-08 | 株式会社東芝 | 半導体記憶装置 |
| JP2735193B2 (ja) * | 1987-08-25 | 1998-04-02 | 株式会社東芝 | 不揮発性半導体装置及びその製造方法 |
| JP3070531B2 (ja) * | 1997-06-27 | 2000-07-31 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| JP3425853B2 (ja) * | 1997-08-29 | 2003-07-14 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| KR100598049B1 (ko) * | 2004-10-28 | 2006-07-07 | 삼성전자주식회사 | 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법 |
| JP5092431B2 (ja) * | 2006-02-03 | 2012-12-05 | 株式会社デンソー | 半導体装置 |
| KR100780249B1 (ko) * | 2006-11-30 | 2007-11-27 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자 |
-
1985
- 1985-07-25 JP JP16478185A patent/JPS6225459A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6225459A (ja) | 1987-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |