JPH0585881A - Pull system for single crystal - Google Patents
Pull system for single crystalInfo
- Publication number
- JPH0585881A JPH0585881A JP24898391A JP24898391A JPH0585881A JP H0585881 A JPH0585881 A JP H0585881A JP 24898391 A JP24898391 A JP 24898391A JP 24898391 A JP24898391 A JP 24898391A JP H0585881 A JPH0585881 A JP H0585881A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- melt
- silicon
- temperature
- tiers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、チョクラルスキー法
(CZ法)による単結晶引上装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for pulling a single crystal by the Czochralski method (CZ method).
【0002】[0002]
【従来の技術】一般にCZ法による単結晶の製造は、例
えば、サセプタ内に配置した坩堝内に結晶用原料を投入
し、これを加熱溶融した後この溶融液に種結晶を浸し、
これを回転させつつ上方に引上げて種結晶下端に単結晶
を成長させることによって行われる。2. Description of the Related Art Generally, for manufacturing a single crystal by the CZ method, for example, a raw material for a crystal is put into a crucible arranged in a susceptor, and this is heated and melted, and then a seed crystal is immersed in the melt,
It is carried out by rotating this and pulling it upward to grow a single crystal at the lower end of the seed crystal.
【0003】この単結晶の製造においては、単結晶引上
の速度を上げ、これにより生産性の向上、引上げられた
単結晶中の欠陥の低減化が図られているが、この引上速
度を上げるには、溶融液の温度分布の均一性を向上させ
るとともに、引上中の単結晶の引上方向の温度勾配を大
きくすることが有効である。従来このための対策とし
て、溶融液面から上方(単結晶側)に輻射する熱を溶融
液面側、特に温度が低下しがちな溶融液と該溶融液が満
たされた坩堝との接点側に向けて反射する反射板を備え
ることが提案されている(例えば特公昭57−4011
9号公報参照)。In the production of this single crystal, the pulling speed of the single crystal is increased, thereby improving the productivity and reducing the defects in the pulled single crystal. To raise the temperature, it is effective to improve the uniformity of the temperature distribution of the melt and to increase the temperature gradient in the pulling direction of the single crystal being pulled. Conventionally, as a measure for this, heat radiated upward from the melt surface (single crystal side) is applied to the melt surface side, especially to the contact side between the melt that tends to decrease in temperature and the crucible filled with the melt. It has been proposed to provide a reflecting plate that reflects toward the target (eg, Japanese Examined Patent Publication No. 57-4011).
No. 9).
【0004】[0004]
【発明が解決しようとする課題】上記反射板は、溶融液
の温度の均一化には役立つが、本発明者の実験による
と、単結晶引上中にこの反射板も高温となり、この反射
板が二次熱源となって引上中の単結晶をかえって加熱し
てしまい、単結晶の引上方向の温度勾配の低下を招いて
しまう結果となる。The above-mentioned reflector is useful for making the temperature of the melt uniform, but according to the experiments of the present inventor, this reflector also becomes hot during pulling of the single crystal, and this reflector is too high. Acts as a secondary heat source and rather heats the single crystal being pulled up, resulting in a decrease in the temperature gradient in the pulling direction of the single crystal.
【0005】本発明は、上記事情に鑑み、溶融液の温度
分布の均一性を向上させるとともに該溶融液に起因する
熱が単結晶に輻射されるのを防止する手段を備えた単結
晶引上装置を提供することを目的とする。In view of the above-mentioned circumstances, the present invention improves the uniformity of the temperature distribution of the melt and prevents the single crystal from being radiated with heat resulting from the melt. The purpose is to provide a device.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明の単結晶引上装置は、チョクラルスキー法によ
る単結晶引上装置において、単結晶を囲繞して配置され
た、溶融液面から上方に輻射される熱を該溶融液面側に
向けて反射する、複数段に重ねられた反射板を備えたこ
とを特徴とするものである。A single crystal pulling apparatus according to the present invention for achieving the above object is a single crystal pulling apparatus according to the Czochralski method. It is characterized in that it is provided with a plurality of reflecting plates that reflect heat radiated upward from the surface toward the melt surface side.
【0007】[0007]
【作用】本発明の単結晶引上装置は、複数段に重ねられ
た反射板を備えているため、例えば最下部の反射板が熱
せられてもその最下部の反射板から単結晶側に向けて輻
射される熱は次の反射板で反射され、高温の溶融液から
輻射される熱に起因して単結晶が加熱されることが防止
され、溶融液の温度の均一性が図られるとともに単結晶
の引上方向の温度勾配を保つことができ、これにより単
結晶の引上速度を向上させることができる。Since the single crystal pulling apparatus of the present invention is provided with the reflecting plates stacked in a plurality of stages, for example, even when the lowermost reflecting plate is heated, the lowermost reflecting plate is directed toward the single crystal side. The heat radiated by the next reflection plate is reflected by the next reflection plate, which prevents the single crystal from being heated by the heat radiated from the high-temperature melt, and the uniformity of the temperature of the melt is ensured. The temperature gradient in the crystal pulling direction can be maintained, and the pulling speed of the single crystal can be improved.
【0008】[0008]
【実施例】以下、図面を参照して、本発明の実施例につ
いて説明する。図1は、本発明の一実施例の単結晶引上
装置の縦断面図である。サセプタ1に支持された石英坩
堝2に、ヒータ3により熱せられたシリコン溶融液4が
満たされており、このシリコン溶融液4の表面にはシリ
コン単結晶5の下面が接し、このシリコン単結晶5はシ
ードチャック6を介してシードワイヤ7により引上げら
れる。またヒータ3によりシリコン溶融液4以外の方向
が熱せられないように、ヒータ3に隣接して、断熱材1
5,16が配設されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a vertical sectional view of a single crystal pulling apparatus according to an embodiment of the present invention. The quartz crucible 2 supported by the susceptor 1 is filled with the silicon melt 4 heated by the heater 3. The surface of the silicon melt 4 is in contact with the lower surface of the silicon single crystal 5, and the silicon single crystal 5 Is pulled up by the seed wire 7 via the seed chuck 6. In addition, the heat insulating material 1 is provided adjacent to the heater 3 so that the heater 3 does not heat any direction other than the silicon melt 4.
5, 16 are provided.
【0009】また、断熱材15の上部には、反射板支持
台17が備えられており、梁18、ワイヤ19を介して
多重(この例では3重)の反射板20が取付けられてい
る。この多重反射板20は、シリコン溶融液4の表面か
らシリコン単結晶5に向けて輻射される熱を、シリコン
溶融液4の表面と石英坩堝2との接する領域に向けて反
射するものであり、これにより温度が低下しがちな該領
域が熱せられてシリコン溶融液4の温度が均一化され
る。A reflecting plate support 17 is provided on the heat insulating material 15, and multiple (three in this example) reflecting plates 20 are attached via beams 18 and wires 19. The multiple reflection plate 20 reflects heat radiated from the surface of the silicon melt 4 toward the silicon single crystal 5 toward a region where the surface of the silicon melt 4 and the quartz crucible 2 are in contact with each other. As a result, the region where the temperature tends to decrease is heated and the temperature of the silicon melt 4 is made uniform.
【0010】また、この多重反射板20は、この多重反
射板20に向けて輻射された熱を完全に反射することは
できず、したがってこの多重反射板20の特に最下段の
反射板20aが徐々に熱せられ、この反射板20aが二
次熱源となってシリコン単結晶5の方向にも熱を輻射す
るが、この熱は次の段の反射板20bで反射され、反射
板20bからシリコン単結晶5の方向に輻射された熱は
反射板20cで反射され、これにより溶融液4の表面か
らシリコン単結晶5に向けて輻射された熱がシリコン単
結晶5に達することが防止される。Further, the multiple reflection plate 20 cannot completely reflect the heat radiated toward the multiple reflection plate 20. Therefore, the lowermost reflection plate 20a of the multiple reflection plate 20 is gradually gradual. The reflecting plate 20a becomes a secondary heat source and radiates heat toward the silicon single crystal 5 as well, but this heat is reflected by the reflecting plate 20b at the next stage, and the reflecting plate 20a reflects the silicon single crystal. The heat radiated in the direction 5 is reflected by the reflection plate 20c, whereby the heat radiated from the surface of the melt 4 toward the silicon single crystal 5 is prevented from reaching the silicon single crystal 5.
【0011】図2は、引上中のシリコン単結晶の、引上
方向の温度分布の一例を示した図である。この図2は、
45kgのシリコンを内径16インチの坩堝にチャージ
し、該坩堝を6rpmの速度で回転させながら平均1.
0mm/minの速度でシリコン単結晶を引上げたとき
のデータである。シリコン溶融液4とシリコン単結晶5
との界面の温度は1420℃であり、図1に示す多重反
射板20や他の反射板を備えない場合は、グラフAのよ
うにその引上方向に温度分布をもつ。またグラフBは、
図1に示す多重反射板20に代えて一枚の反射板を備え
た場合の温度分布を表わしており、その反射板が二次熱
源となってシリコン単結晶5がかえって加熱されてしま
っている。FIG. 2 is a diagram showing an example of the temperature distribution in the pulling direction of the silicon single crystal being pulled up. This Figure 2
45 kg of silicon was charged into a crucible having an inner diameter of 16 inches, and the crucible was rotated at a speed of 6 rpm on average to 1.
This is data when a silicon single crystal is pulled at a speed of 0 mm / min. Silicon melt 4 and silicon single crystal 5
The temperature at the interface with and is 1420 ° C., and in the case where the multiple reflection plate 20 shown in FIG. 1 and other reflection plates are not provided, there is a temperature distribution in the pulling direction as shown in Graph A. Graph B is
2 shows a temperature distribution in the case where a single reflection plate is provided instead of the multiple reflection plate 20 shown in FIG. 1, and the reflection plate serves as a secondary heat source and the silicon single crystal 5 is heated up instead. .
【0012】グラフCは図1に示すような多重反射板を
備えた場合の温度分布を表わすグラフであり、シリコン
溶融液4の表面からシリコン単結晶5に向けて輻射され
た熱が反射される結果、シリコン単結晶の冷却が進み、
その引上方向に勾配の大きな温度分布となっている。
尚、本発明の単結晶引上装置は、シリコン単結晶の製造
のほか、CZ法を用いる種々の単結晶の製造に広く用い
ることができるものである。Graph C is a graph showing the temperature distribution in the case where the multiple reflection plate shown in FIG. 1 is provided, and the heat radiated from the surface of the silicon melt 4 toward the silicon single crystal 5 is reflected. As a result, the cooling of the silicon single crystal proceeds,
The temperature distribution has a large gradient in the pulling direction.
The apparatus for pulling a single crystal of the present invention can be widely used for manufacturing a silicon single crystal and various kinds of single crystals using the CZ method.
【0013】[0013]
【発明の効果】以上のように、本発明の単結晶引上装置
は、単結晶を囲繞して配置された、溶融液面から上方に
輻射する熱を該溶融液面側に向けて反射する、複数段に
重ねられた反射板を備えているため、高温の溶融液から
輻射される熱に起因して単結晶が加熱されることが防止
され、溶融液の温度の均一性が図られるとともに単結晶
の引上方向に大きな温度勾配を保つことができ、これに
より単結晶の引上速度の向上、欠陥の低減化が図られ
る。As described above, the apparatus for pulling a single crystal of the present invention reflects the heat radiated upward from the melt surface, which is arranged surrounding the single crystal, toward the melt surface side. Since the reflection plates are stacked in a plurality of stages, the single crystal is prevented from being heated due to the heat radiated from the high temperature melt, and the temperature of the melt can be made uniform. A large temperature gradient can be maintained in the pulling direction of the single crystal, which can improve the pulling speed of the single crystal and reduce defects.
【図1】本発明の一実施例の単結晶引上装置の縦断面図
である。FIG. 1 is a vertical sectional view of a single crystal pulling apparatus according to an embodiment of the present invention.
【図2】引上中の単結晶の、引上方向の温度分布の一例
を示した図である。FIG. 2 is a diagram showing an example of a temperature distribution in a pulling direction of a single crystal being pulled up.
1 サセプタ 2 坩堝 3 ヒータ 4 溶融液 5 単結晶 20 多重反射
板1 Susceptor 2 Crucible 3 Heater 4 Melt Liquid 5 Single Crystal 20 Multiple Reflector
Claims (1)
置において、 単結晶を囲繞して配置された、溶融液面から上方に輻射
する熱を該溶融液面側に向けて反射する、複数段に重ね
られた反射板を備えたことを特徴とする単結晶引上装
置。1. A single-crystal pulling apparatus by the Czochralski method, wherein a plurality of stages are provided surrounding the single crystal and reflecting heat radiated upward from the melt surface toward the melt surface side. An apparatus for pulling a single crystal, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24898391A JPH0585881A (en) | 1991-09-27 | 1991-09-27 | Pull system for single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24898391A JPH0585881A (en) | 1991-09-27 | 1991-09-27 | Pull system for single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0585881A true JPH0585881A (en) | 1993-04-06 |
Family
ID=17186286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24898391A Withdrawn JPH0585881A (en) | 1991-09-27 | 1991-09-27 | Pull system for single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0585881A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0890662A1 (en) * | 1997-07-09 | 1999-01-13 | Shin-Etsu Handotai Company Limited | Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
KR20000065330A (en) * | 1999-04-01 | 2000-11-15 | 이규건 | Gripper for carrying weft yarn in shuttless loom |
EP2949788A4 (en) * | 2013-01-23 | 2016-10-19 | Lg Siltron Inc | Single crystal growing device |
-
1991
- 1991-09-27 JP JP24898391A patent/JPH0585881A/en not_active Withdrawn
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0890662A1 (en) * | 1997-07-09 | 1999-01-13 | Shin-Etsu Handotai Company Limited | Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
US5968264A (en) * | 1997-07-09 | 1999-10-19 | Shin-Etsu Handotai Co., Ltd. | Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
US6159438A (en) * | 1997-07-09 | 2000-12-12 | Shin-Etsu Handotai Co., Ltd. | Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
US6364947B1 (en) | 1997-07-09 | 2002-04-02 | Shin-Etsu Handotai Co., Ltd. | Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
KR20000065330A (en) * | 1999-04-01 | 2000-11-15 | 이규건 | Gripper for carrying weft yarn in shuttless loom |
EP2949788A4 (en) * | 2013-01-23 | 2016-10-19 | Lg Siltron Inc | Single crystal growing device |
US9657411B2 (en) | 2013-01-23 | 2017-05-23 | Lg Siltron Incorporated | Single-crystal growth apparatus |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981203 |