JPH0584676B2 - - Google Patents

Info

Publication number
JPH0584676B2
JPH0584676B2 JP15674085A JP15674085A JPH0584676B2 JP H0584676 B2 JPH0584676 B2 JP H0584676B2 JP 15674085 A JP15674085 A JP 15674085A JP 15674085 A JP15674085 A JP 15674085A JP H0584676 B2 JPH0584676 B2 JP H0584676B2
Authority
JP
Japan
Prior art keywords
crystal
thin film
substrate
insulating substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15674085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6218072A (ja
Inventor
Takeshi Fukazawa
Masato Mizukoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP15674085A priority Critical patent/JPS6218072A/ja
Publication of JPS6218072A publication Critical patent/JPS6218072A/ja
Publication of JPH0584676B2 publication Critical patent/JPH0584676B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP15674085A 1985-07-16 1985-07-16 半導体歪検出器 Granted JPS6218072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15674085A JPS6218072A (ja) 1985-07-16 1985-07-16 半導体歪検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15674085A JPS6218072A (ja) 1985-07-16 1985-07-16 半導体歪検出器

Publications (2)

Publication Number Publication Date
JPS6218072A JPS6218072A (ja) 1987-01-27
JPH0584676B2 true JPH0584676B2 (enrdf_load_html_response) 1993-12-02

Family

ID=15634280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15674085A Granted JPS6218072A (ja) 1985-07-16 1985-07-16 半導体歪検出器

Country Status (1)

Country Link
JP (1) JPS6218072A (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3814348A1 (de) * 1988-04-28 1989-11-09 Philips Patentverwaltung Verfahren zur herstellung einer polykristallinen halbleitenden widerstandsschicht aus silicium auf einem siliciumtraeger
US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
US5095349A (en) * 1988-06-08 1992-03-10 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
USRE34893E (en) * 1988-06-08 1995-04-04 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
US5191798A (en) * 1988-09-30 1993-03-09 Kabushiki Kaisha Komatsu Seisakusho Pressure sensor
JP2769661B2 (ja) * 1992-09-29 1998-06-25 三菱電機株式会社 半導体装置およびその製造方法
JP5158442B2 (ja) 2009-02-27 2013-03-06 三菱電機株式会社 半導体圧力センサおよびその製造方法

Also Published As

Publication number Publication date
JPS6218072A (ja) 1987-01-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term