JPH0580155B2 - - Google Patents
Info
- Publication number
- JPH0580155B2 JPH0580155B2 JP27060187A JP27060187A JPH0580155B2 JP H0580155 B2 JPH0580155 B2 JP H0580155B2 JP 27060187 A JP27060187 A JP 27060187A JP 27060187 A JP27060187 A JP 27060187A JP H0580155 B2 JPH0580155 B2 JP H0580155B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- bipolar transistor
- well
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27060187A JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27060187A JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01112763A JPH01112763A (ja) | 1989-05-01 |
JPH0580155B2 true JPH0580155B2 (fr) | 1993-11-08 |
Family
ID=17488370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27060187A Granted JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01112763A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2575876B2 (ja) * | 1989-05-17 | 1997-01-29 | 株式会社東芝 | 半導体装置 |
KR940009357B1 (ko) * | 1991-04-09 | 1994-10-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
-
1987
- 1987-10-27 JP JP27060187A patent/JPH01112763A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01112763A (ja) | 1989-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |