JPH0579188B2 - - Google Patents

Info

Publication number
JPH0579188B2
JPH0579188B2 JP61114130A JP11413086A JPH0579188B2 JP H0579188 B2 JPH0579188 B2 JP H0579188B2 JP 61114130 A JP61114130 A JP 61114130A JP 11413086 A JP11413086 A JP 11413086A JP H0579188 B2 JPH0579188 B2 JP H0579188B2
Authority
JP
Japan
Prior art keywords
film
molybdenum
titanium
forming
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61114130A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62295452A (ja
Inventor
Kazuo Myamoto
Hideaki Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP61114130A priority Critical patent/JPS62295452A/ja
Publication of JPS62295452A publication Critical patent/JPS62295452A/ja
Publication of JPH0579188B2 publication Critical patent/JPH0579188B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP61114130A 1986-05-19 1986-05-19 電極形成方法 Granted JPS62295452A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61114130A JPS62295452A (ja) 1986-05-19 1986-05-19 電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61114130A JPS62295452A (ja) 1986-05-19 1986-05-19 電極形成方法

Publications (2)

Publication Number Publication Date
JPS62295452A JPS62295452A (ja) 1987-12-22
JPH0579188B2 true JPH0579188B2 (enExample) 1993-11-01

Family

ID=14629886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61114130A Granted JPS62295452A (ja) 1986-05-19 1986-05-19 電極形成方法

Country Status (1)

Country Link
JP (1) JPS62295452A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2687017B2 (ja) * 1989-08-14 1997-12-08 サンケン電気 株式会社 ショットキバリア半導体装置

Also Published As

Publication number Publication date
JPS62295452A (ja) 1987-12-22

Similar Documents

Publication Publication Date Title
JP3280803B2 (ja) 半導体装置及びその製造方法
US4283439A (en) Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
JPS58115855A (ja) 半導体装置およびその製造法
US5093710A (en) Semiconductor device having a layer of titanium nitride on the side walls of contact holes and method of fabricating same
JPH081950B2 (ja) 半導体装置の製造方法
JPS61263159A (ja) 集積回路用の高温相互接続方式
JPS639925A (ja) 半導体装置の製造方法
JPS6190445A (ja) 半導体装置
JP3304541B2 (ja) オーミック電極の形成方法
JPH03148131A (ja) 半導体素子及びその製造方法
JPS60193362A (ja) 半導体装置
JPS62295452A (ja) 電極形成方法
JPS6057925A (ja) シリコン上へのタングステン膜の形成方法
JPH03262127A (ja) 半導体装置の製造方法
JPH04196122A (ja) 半導体装置の製造方法
JP2806757B2 (ja) 半導体装置の製造方法
JP3119505B2 (ja) 半導体装置
JPH04287973A (ja) 化合物半導体装置の製造方法
KR100199526B1 (ko) 반도체 장치 및 그 제조방법
JPH0391240A (ja) 金属電極配線の製造方法
JPS60103668A (ja) 半導体装置
JPS6059742B2 (ja) 半導体装置およびその製造方法
JPH02114641A (ja) 半導体装置の製造方法
JPS6294937A (ja) 半導体集積回路装置の製造方法
JPS5912010B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term