JPH0579184B2 - - Google Patents
Info
- Publication number
- JPH0579184B2 JPH0579184B2 JP20017787A JP20017787A JPH0579184B2 JP H0579184 B2 JPH0579184 B2 JP H0579184B2 JP 20017787 A JP20017787 A JP 20017787A JP 20017787 A JP20017787 A JP 20017787A JP H0579184 B2 JPH0579184 B2 JP H0579184B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- film
- silicon film
- hydrogen
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200177A JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200177A JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6442851A JPS6442851A (en) | 1989-02-15 |
| JPH0579184B2 true JPH0579184B2 (ko) | 1993-11-01 |
Family
ID=16420074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200177A Granted JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442851A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2601136B2 (ja) * | 1993-05-07 | 1997-04-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH0955381A (ja) * | 1995-08-11 | 1997-02-25 | S I I R D Center:Kk | 半導体集積回路の製造方法 |
| JP2825074B2 (ja) * | 1995-10-25 | 1998-11-18 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1987
- 1987-08-10 JP JP62200177A patent/JPS6442851A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6442851A (en) | 1989-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |