JPH0579170B2 - - Google Patents
Info
- Publication number
- JPH0579170B2 JPH0579170B2 JP61048391A JP4839186A JPH0579170B2 JP H0579170 B2 JPH0579170 B2 JP H0579170B2 JP 61048391 A JP61048391 A JP 61048391A JP 4839186 A JP4839186 A JP 4839186A JP H0579170 B2 JPH0579170 B2 JP H0579170B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- spacer
- height
- semiconductor element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000005476 soldering Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10152—Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/10165—Alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8103—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector
- H01L2224/81035—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector by heating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8103—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector
- H01L2224/81047—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector by mechanical means, e.g. severing, pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/8114—Guiding structures outside the body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体素子の実装に係り、特にLSI
の実装に好適な接続方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the mounting of semiconductor elements, and particularly to LSI
This invention relates to a connection method suitable for implementation.
半導体素子を基板上にハンダを介して電気的お
よび機械的に接続する方法には、特公昭43−1654
号公報に記載されている如く、ハンダ付する金属
の周囲にハンダを濡らさない物質を配し（以下ハ
ンダダムという）ハンダの表面張力を利用して素
子を基板から離して接続する方法がある（以下こ
の方法をCCBと称す）。CCBにおいてはハンダダ
ムが必要不可欠であるが、一般に微小寸法である
ので作製に高コストとなる。またハンダダムの設
計又は作製が不良であると、ハンダがハンダダム
を破壊するという不良が発生する。
A method of electrically and mechanically connecting semiconductor elements to a substrate via solder is described in Japanese Patent Publication No. 43-1654.
As described in the publication, there is a method of placing a substance that does not wet the solder around the metal to be soldered (hereinafter referred to as solder dam) and using the surface tension of the solder to separate the element from the board and connect it (hereinafter referred to as solder dam). This method is called CCB). Solder dam is indispensable in CCB, but it is generally small in size and therefore expensive to manufacture. Furthermore, if the design or fabrication of the solder dam is defective, a defect may occur in which the solder destroys the solder dam.
上記従来例では、微小なハンダダムを構成する
には高コストであり、設計裕度が少ないとう問題
があつた。
In the conventional example described above, there were problems in that it was expensive to construct a minute solder dam and there was little design margin.
本発明の目的はハンダダムなしでCCBと同様
な高密度かつ高信頼の接続を低コストで提供する
ことにある。 An object of the present invention is to provide a high-density and highly reliable connection similar to that of a CCB at low cost without using solder dam.
半導体素子をハンダを介して基板に電気的およ
び機械的に接続するに際し、半導体素子と基板と
の間に所定厚さのスペーサを介在させることによ
り、上記問題点は解決される。
The above problem can be solved by interposing a spacer of a predetermined thickness between the semiconductor element and the substrate when electrically and mechanically connecting the semiconductor element to the substrate via solder.
CCBが高信頼性を有するのは比較的軟らかい
ハンダにより接続されているため、基板と素子の
熱膨張の差をハンダが吸収するためである。従つ
てCCBの破壊はハンダの付根（素子又は基板側）
で起こる。これを改良したものにハンダ形状を球
形から中央がくびれたづつみ形にして応力をくび
れた所に集中させたものがある。このように素子
がハンダだけで空中に保持されていることが要点
である。
The reason why CCBs have high reliability is because they are connected using relatively soft solder, which absorbs the difference in thermal expansion between the board and the element. Therefore, the CCB breaks down at the base of the solder (element or board side).
It happens in An improved version of this is one in which the solder shape is changed from a spherical shape to a constriction in the center to concentrate stress at the constriction. The key point is that the element is held in the air only by solder.
ハンダダムなしで素子をハンダ接続すると、接
続後のハンダ高さは基板側のハンダ濡れ量に左右
される（あらかじめ素子側に半田ボールがあるも
のとする）。ここに素子と基板にハンダ接続され
ない部分にハンダボールの高さ以下のスペーサを
設けてハンダ接続すると、接続の高さはスペーサ
の高さとなる。このときハンダの形状は基板側の
接続端子に濡れ広がるためづつみ形となる。また
スペーサは素子側、基板側のどちらか一方に固定
またはどちらにも固定しなければ自由に素子又は
ハンダが熱膨張等で移動できるので高信頼が期待
できる。またスペーサに熱伝導の高い物質を選定
すれば素子で発生した熱を基板に放出することも
可能である。 When devices are soldered together without a solder dam, the solder height after connection depends on the amount of solder wetting on the board side (assuming there is a solder ball on the device side in advance). If a spacer with the height of the solder ball or less is provided at a portion where the element and the board are not connected by solder, and the solder connection is made, the height of the connection becomes the height of the spacer. At this time, the shape of the solder becomes a knot because it wets and spreads over the connection terminals on the board side. Further, since the spacer is fixed to either the element side or the substrate side, or if it is not fixed to either side, the element or solder can move freely due to thermal expansion, etc., so high reliability can be expected. Furthermore, if a material with high thermal conductivity is selected for the spacer, it is possible to release the heat generated in the element to the substrate.
以下、本発明の一実施例を第１図に示す。先ず
断面図および平面図をそれぞれ第２，３図に示す
如く、基板１上にハンダ付用端子２を蒸着、メツ
キあるいは印刷その他の方法で形成する。材質は
金、銅等ハンダ付が可能な内室の一層膜又はこれ
らを最上層とする多層膜である。次にスペーサ３
を固定する。本例ではスペーサ３の半導体素子５
に接する面は平面であるが、ハンダ接続後に半導
体素子５が基板に対し平行になればスペーサ３の
形状は問わない。スペーサ３の固定後の高さはハ
ンダボール４の高さを越えてはならない。このの
ち通常のCCBと同様にフラツクス等を用いて素
子を基板の所定の位置に仮付をしてから加熱して
ハンダ接続をする。このとき溶融したハンダはハ
ンダ付用端子２に濡れ広がりスペーサにより接続
高さが制御されるためハンダボール４は第１図に
示す如くづつみ形ハンダ６となる。
An embodiment of the present invention is shown in FIG. 1 below. First, as shown in FIGS. 2 and 3, a cross-sectional view and a plan view, respectively, soldering terminals 2 are formed on a substrate 1 by vapor deposition, plating, printing, or other methods. The material is a single-layer film in the interior that can be soldered, such as gold or copper, or a multi-layer film with these as the top layer. Next, spacer 3
to be fixed. In this example, the semiconductor element 5 of the spacer 3
Although the surface in contact with is a flat surface, the shape of the spacer 3 does not matter as long as the semiconductor element 5 becomes parallel to the substrate after soldering. The height of the spacer 3 after being fixed must not exceed the height of the solder ball 4. After this, as with normal CCBs, the elements are temporarily attached to a predetermined position on the board using flux, etc., and then heated and soldered. At this time, the molten solder wets and spreads on the soldering terminal 2 and the connection height is controlled by the spacer, so the solder ball 4 becomes a bundle-shaped solder 6 as shown in FIG.
必要に応じてこの後、フラツクスの除去および
保護用樹脂を素子５にかぶせる。 After this, if necessary, the element 5 is covered with a resin for flux removal and protection.
本発明によれば、ハンダダムなしという低コス
トでCCBと同等以上の性能を得ることができる。
According to the present invention, it is possible to obtain performance equal to or higher than that of CCB at low cost without using solder dam.
第１図は本発明による半導体素子接続方法を説
明するための要部断面図、第２，３図はそれぞれ
本発明による半導体素子接続方法による部品配置
を説明するための要部断面図及び要部平面図であ
る。
符号の説明、１……基板、２……ハンダ付用端
子、３……スペーサ、４……ハンダボール、５…
…半導体素子、６……つづみ形ハンダ。
FIG. 1 is a cross-sectional view of a main part for explaining the semiconductor element connecting method according to the present invention, and FIGS. FIG. Explanation of symbols, 1... Board, 2... Soldering terminal, 3... Spacer, 4... Solder ball, 5...
...Semiconductor element, 6...Tsuru type solder.
Claims (1)
よび機械的に接続する方法において、接続前に前
記半導体素子にはハンダボールを設けておき前記
半導体素子と基板の間に前記ハンダボールの高さ
以下の厚さのスペーサを介在させて前記ハンダの
高さを制御するとともに、接続前のハンダボール
と半導体素子及び基板とが接合する面積に対し
て、接続後のハンダと半導体素子及び基板とが接
合する面積を広くすることで接続後のハンダの形
状を、ハンダ中央部がくびれたつづみ形とするこ
とを特徴とする半導体素子接続方法。1. In a method of electrically and mechanically connecting a semiconductor element to a substrate via solder, a solder ball is provided on the semiconductor element before connection, and a height of the solder ball is lower than or equal to the height of the solder ball between the semiconductor element and the substrate. The height of the solder is controlled by intervening a spacer with a thickness of A method for connecting semiconductor elements, characterized in that by increasing the area of solder connected, the shape of the solder after connection is made into a constricted central part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4839186A JPS62206843A (en) | 1986-03-07 | 1986-03-07 | Connecting method for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4839186A JPS62206843A (en) | 1986-03-07 | 1986-03-07 | Connecting method for semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62206843A JPS62206843A (en) | 1987-09-11 |
| JPH0579170B2 true JPH0579170B2 (en) | 1993-11-01 |
Family
ID=12801993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4839186A Granted JPS62206843A (en) | 1986-03-07 | 1986-03-07 | Connecting method for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62206843A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014148634A1 (en) | 2013-03-21 | 2014-09-25 | 株式会社谷黒組 | Soldering device and method, and manufactured substrate and electronic component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173953A (en) * | 1981-04-21 | 1982-10-26 | Seiko Epson Corp | Semiconductor device |
| JPS57176738A (en) * | 1981-04-23 | 1982-10-30 | Seiko Epson Corp | Connecting structure for flip chip |
-
1986
- 1986-03-07 JP JP4839186A patent/JPS62206843A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173953A (en) * | 1981-04-21 | 1982-10-26 | Seiko Epson Corp | Semiconductor device |
| JPS57176738A (en) * | 1981-04-23 | 1982-10-30 | Seiko Epson Corp | Connecting structure for flip chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014148634A1 (en) | 2013-03-21 | 2014-09-25 | 株式会社谷黒組 | Soldering device and method, and manufactured substrate and electronic component |
| KR20150133185A (en) * | 2013-03-21 | 2015-11-27 | 가부시키가이샤 다니구로구미 | Soldering device and method, and manufactured substrate and electronic component |
| EP2978287A4 (en) * | 2013-03-21 | 2017-02-08 | Tanigurogumi Corporation | Soldering device and method, and manufactured substrate and electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62206843A (en) | 1987-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |