JPH0578181B2 - - Google Patents
Info
- Publication number
- JPH0578181B2 JPH0578181B2 JP57171824A JP17182482A JPH0578181B2 JP H0578181 B2 JPH0578181 B2 JP H0578181B2 JP 57171824 A JP57171824 A JP 57171824A JP 17182482 A JP17182482 A JP 17182482A JP H0578181 B2 JPH0578181 B2 JP H0578181B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact hole
- conductor film
- etching
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- -1 and their silicides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17182482A JPS5961147A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17182482A JPS5961147A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961147A JPS5961147A (ja) | 1984-04-07 |
| JPH0578181B2 true JPH0578181B2 (de) | 1993-10-28 |
Family
ID=15930417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17182482A Granted JPS5961147A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961147A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4796081A (en) * | 1986-05-02 | 1989-01-03 | Advanced Micro Devices, Inc. | Low resistance metal contact for silicon devices |
| JP3413876B2 (ja) * | 1992-07-08 | 2003-06-09 | セイコーエプソン株式会社 | 半導体装置 |
| KR20070047624A (ko) * | 2005-11-02 | 2007-05-07 | 주성엔지니어링(주) | 박막 패턴 형성 방법 |
| JP2013075740A (ja) | 2011-09-30 | 2013-04-25 | Brother Industries Ltd | シート搬送装置及び画像形成装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380183A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Semiconductor device |
| JPS58155741A (ja) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | 多層配線構造の製造方法 |
-
1982
- 1982-09-30 JP JP17182482A patent/JPS5961147A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380183A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Semiconductor device |
| JPS58155741A (ja) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | 多層配線構造の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961147A (ja) | 1984-04-07 |
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