JPH0576793B2 - - Google Patents

Info

Publication number
JPH0576793B2
JPH0576793B2 JP58190730A JP19073083A JPH0576793B2 JP H0576793 B2 JPH0576793 B2 JP H0576793B2 JP 58190730 A JP58190730 A JP 58190730A JP 19073083 A JP19073083 A JP 19073083A JP H0576793 B2 JPH0576793 B2 JP H0576793B2
Authority
JP
Japan
Prior art keywords
single crystal
thin film
lead titanate
magnesium oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58190730A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6083387A (ja
Inventor
Toshio Kobayashi
Keiko Kushida
Hiroyuki Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58190730A priority Critical patent/JPS6083387A/ja
Publication of JPS6083387A publication Critical patent/JPS6083387A/ja
Publication of JPH0576793B2 publication Critical patent/JPH0576793B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Transducers For Ultrasonic Waves (AREA)
JP58190730A 1983-10-14 1983-10-14 アレー圧電変換器 Granted JPS6083387A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58190730A JPS6083387A (ja) 1983-10-14 1983-10-14 アレー圧電変換器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58190730A JPS6083387A (ja) 1983-10-14 1983-10-14 アレー圧電変換器

Publications (2)

Publication Number Publication Date
JPS6083387A JPS6083387A (ja) 1985-05-11
JPH0576793B2 true JPH0576793B2 (OSRAM) 1993-10-25

Family

ID=16262835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58190730A Granted JPS6083387A (ja) 1983-10-14 1983-10-14 アレー圧電変換器

Country Status (1)

Country Link
JP (1) JPS6083387A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07101832B2 (ja) * 1986-06-23 1995-11-01 株式会社日立製作所 圧電変換器及びその製造方法
JP3782282B2 (ja) * 2000-04-17 2006-06-07 松下電器産業株式会社 圧電駆動体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113713A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Array type ultra-high frequency sound oscillator
JPS58186105A (ja) * 1982-04-26 1983-10-31 松下電器産業株式会社 強誘電体薄膜素子

Also Published As

Publication number Publication date
JPS6083387A (ja) 1985-05-11

Similar Documents

Publication Publication Date Title
JP2819067B2 (ja) シリコン上にエピタキシャル的に成長する立方金属酸化薄膜
US4803392A (en) Piezoelectric transducer
KR100438467B1 (ko) 박막 공진기 장치 및 이의 제조 방법
US6709776B2 (en) Multilayer thin film and its fabrication process as well as electron device
KR100827216B1 (ko) 마이크로 전자공학 압전 구조체
JPH0548642B2 (OSRAM)
US20040028838A1 (en) Method for making a strain-relieved tunable dielectric thin film
JPS61177900A (ja) 圧電変換器およびその製造方法
Shih et al. Theoretical investigation of the SAW properties of ferroelectric film composite structures
Talin et al. Epitaxial PbZr. 52 Ti. 48 O 3 films on SrTiO 3/(001) Si substrates deposited by sol–gel method
JP2003158309A (ja) 圧電振動素子、容量素子、及び記憶装置
Kushida et al. Ferroelectric properties of c-axis oriented PbTiO3 films Thin films, surfaces, and small particles
JPH0576793B2 (OSRAM)
JP3079509B2 (ja) 薄膜積層結晶体およびその製造方法
JPS6096599A (ja) 酸化物超伝導体薄膜の製造方法
Wasa et al. Fundamentals of thin film piezoelectric materials and processing design for a better energy harvesting MEMS
Foster et al. Structure and properties of heteroepitaxial Pb (Zr0. 35Ti0. 65) O3/SrRuO3 multilayer thin films on SrTiO3 (100) prepared by MOCVD and RF sputtering
GB2025184A (en) Surface acousticwave device comprising a piezoelectric subtrate having a zinc oxid layer on an alumina layer
JPS62100099A (ja) 圧電素子およびその製造方法
Sakashita et al. TfI7: Electrical properties of MOCYD-deposited PZT thin films
Noda et al. Investigation of Morphotropic Phase Boundary in Sputter-Grown Pb (Zr x, Ti 1-x) 03 Epitaxial Films
JP3214031B2 (ja) 強誘電体薄膜素子及びその製造方法
JP2529438B2 (ja) 酸化物薄膜の製造方法
JPS626597A (ja) 圧電素子の製造方法
JPS6369280A (ja) 圧電素子及びその製造方法