JPH0576790B2 - - Google Patents

Info

Publication number
JPH0576790B2
JPH0576790B2 JP59155256A JP15525684A JPH0576790B2 JP H0576790 B2 JPH0576790 B2 JP H0576790B2 JP 59155256 A JP59155256 A JP 59155256A JP 15525684 A JP15525684 A JP 15525684A JP H0576790 B2 JPH0576790 B2 JP H0576790B2
Authority
JP
Japan
Prior art keywords
light
photoelectric conversion
conversion device
irradiated
photovoltaic elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59155256A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135571A (ja
Inventor
Shinichi Muramatsu
Juichi Shimada
Sunao Matsubara
Haruo Ito
Nobuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15525684A priority Critical patent/JPS6135571A/ja
Priority to US06/759,961 priority patent/US4642412A/en
Publication of JPS6135571A publication Critical patent/JPS6135571A/ja
Publication of JPH0576790B2 publication Critical patent/JPH0576790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications

Landscapes

  • Photovoltaic Devices (AREA)
JP15525684A 1984-07-27 1984-07-27 光電変換装置 Granted JPS6135571A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15525684A JPS6135571A (ja) 1984-07-27 1984-07-27 光電変換装置
US06/759,961 US4642412A (en) 1984-07-27 1985-07-29 Photo-electronic conversion apparatus with light pattern discriminator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15525684A JPS6135571A (ja) 1984-07-27 1984-07-27 光電変換装置

Publications (2)

Publication Number Publication Date
JPS6135571A JPS6135571A (ja) 1986-02-20
JPH0576790B2 true JPH0576790B2 (enExample) 1993-10-25

Family

ID=15601939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15525684A Granted JPS6135571A (ja) 1984-07-27 1984-07-27 光電変換装置

Country Status (2)

Country Link
US (1) US4642412A (enExample)
JP (1) JPS6135571A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3990090B2 (ja) * 2000-03-31 2007-10-10 日本オプネクスト株式会社 光電子装置およびその製造方法
US20080053698A1 (en) * 2006-07-29 2008-03-06 Steve Purves Pre-wired power distribution system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3672999A (en) * 1968-12-19 1972-06-27 Nasa Use of unilluminated solar cells as shunt diodes for a solar array
US3925103A (en) * 1972-10-27 1975-12-09 Trw Inc Radiation hard solar cell and array
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device

Also Published As

Publication number Publication date
JPS6135571A (ja) 1986-02-20
US4642412A (en) 1987-02-10

Similar Documents

Publication Publication Date Title
US4032947A (en) Controllable charge-coupled semiconductor device
KR910004992B1 (ko) 수광소자
ATE233433T1 (de) Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen
JPS63245967A (ja) カラ−センサ−
JPH0576790B2 (enExample)
JPS6173386A (ja) 光起電力装置の製造方法
JPH0683335B2 (ja) 光電変換装置
JPS61294875A (ja) 光発電素子
JPS63119587A (ja) 集積型アモルフアスシリコン太陽電池
SU1199118A1 (ru) Накопитель дл оптоэлектронного запоминающего устройства
JP2001036105A (ja) 太陽電池モジュール
JPS60141152U (ja) 太陽電池パネル装置
JPS6112061A (ja) イメ−ジセンサとその製造方法
JPH0470790B2 (enExample)
JPH02183577A (ja) 半導体リレー装置
JPS60170254A (ja) 原稿読取装置
JPS62244179A (ja) 薄膜太陽電池
JPS60256885A (ja) 情報格納カ−ド
JPS6413527A (en) Liquid crystal display element
JPS60189257A (ja) イメ−ジセンサ
JPS59119759A (ja) イメ−ジセンサ
JPS599783A (ja) Ｉｃ内蔵カ−ド
JPS63141378A (ja) 薄膜光センサ
JPS6332305A (ja) 光位置検出素子
JPS63185072A (ja) 光電変換装置