JPH057358B2 - - Google Patents
Info
- Publication number
- JPH057358B2 JPH057358B2 JP8824188A JP8824188A JPH057358B2 JP H057358 B2 JPH057358 B2 JP H057358B2 JP 8824188 A JP8824188 A JP 8824188A JP 8824188 A JP8824188 A JP 8824188A JP H057358 B2 JPH057358 B2 JP H057358B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- insulating film
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000864 Auger spectrum Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261300A JPH01261300A (ja) | 1989-10-18 |
| JPH057358B2 true JPH057358B2 (de) | 1993-01-28 |
Family
ID=13937363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8824188A Granted JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261300A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1260907A (zh) | 1997-06-19 | 2000-07-19 | 旭化成工业株式会社 | Soi衬底及其制造方法和半导体器件及其制造方法 |
| JP4654439B2 (ja) * | 2005-09-20 | 2011-03-23 | 国立大学法人豊橋技術科学大学 | 金属酸化物薄膜の形成方法 |
-
1988
- 1988-04-12 JP JP8824188A patent/JPH01261300A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01261300A (ja) | 1989-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |