JPH057358B2 - - Google Patents
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- Publication number
- JPH057358B2 JPH057358B2 JP8824188A JP8824188A JPH057358B2 JP H057358 B2 JPH057358 B2 JP H057358B2 JP 8824188 A JP8824188 A JP 8824188A JP 8824188 A JP8824188 A JP 8824188A JP H057358 B2 JPH057358 B2 JP H057358B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- insulating film
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000864 Auger spectrum Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、集積回路、トランジスタ等の半導
体製造工業に於いて用いられるAl2O3単結晶膜の
ヘテロエピタキシヤル成長方法にに関するもので
ある。[Detailed Description of the Invention] "Industrial Application Field" This invention relates to a method for heteroepitaxial growth of Al 2 O 3 single crystal films used in the semiconductor manufacturing industry such as integrated circuits and transistors. .
「従来技術及びその問題点」
Si基板上への単結晶絶縁膜は、３次元集積回路
やSOI（Si on Insulator）素子実現のために必要
な要素の１つである。"Prior art and its problems" A single crystal insulating film on a Si substrate is one of the elements necessary for realizing three-dimensional integrated circuits and SOI (Si on Insulator) elements.
そのためこれまでCaF／Si、MgO Al2O3／Si、
SrO／Siなどの種々の絶縁膜が検討されてきてい
る。しかしながら、これらの絶縁膜は、絶縁膜の
電気的特性、成長方法の困難さ、高温熱処理時の
安定性等の点で実用上種々の問題点が残されてお
り、実用化までには至つていないのが現状であ
る。 Therefore, so far CaF/Si, MgO Al 2 O 3 /Si,
Various insulating films such as SrO/Si have been studied. However, these insulating films still have various problems in practical use, such as the electrical properties of the insulating film, the difficulty of the growth method, and the stability during high-temperature heat treatment, so it is difficult to put them into practical use. The current situation is that this is not the case.
本発明は、このような欠点を解消した単結晶絶
縁膜の成長方法を提供することを目的とする。 An object of the present invention is to provide a method for growing a single crystal insulating film that eliminates such drawbacks.
「問題点を解決するための手段」
本発明者等は、長年SOS（Si on Sapphire）の
研究を行なつてきたが、SOS基板として用いられ
るAl2O3が半導体材料として優れた特性をもつて
いることに着目し、SOS構造の逆の形となるSi基
板上へのAl2O3単結晶（サフアイア）膜を製作す
ることを試みた。しかして、これまでは、非晶質
のAl2O3膜は研究されていたが、単結晶Al2O3絶
縁膜についての報告はなされていなかつた。"Means for Solving the Problem" The present inventors have been conducting research on SOS (Si on Sapphire) for many years, and have discovered that Al 2 O 3 , which is used as an SOS substrate, has excellent properties as a semiconductor material. Focusing on this fact, we attempted to fabricate an Al 2 O 3 single crystal (sapphire) film on a Si substrate, which is the inverse of the SOS structure. So far, amorphous Al 2 O 3 films have been studied, but there have been no reports on single-crystal Al 2 O 3 insulating films.
本発明者等は、鋭意研究の結果、減圧気相成長
法で、トリメチルアルミニウム（Al（CH3）3）と
亜酸化窒素（N2O）ガスとを用いることによつ
て、Si基板上にγ−Al2O3単結晶膜のエピタキシ
ヤル成長ができ、しかも得られた絶縁膜は、優れ
た電気的特性、高温熱処理時の安定性を示すこと
を見い出し本発明に到達した。 As a result of intensive research, the inventors of the present invention have developed a method for forming silicon substrates on Si substrates by using trimethylaluminum (Al(CH 3 ) 3 ) and nitrous oxide (N 2 O) gas using a low-pressure vapor phase epitaxy method. The inventors have discovered that a γ-Al 2 O 3 single crystal film can be grown epitaxially, and that the resulting insulating film exhibits excellent electrical properties and stability during high-temperature heat treatment, and has thus arrived at the present invention.
即ち本発明は、減圧気相成長装置内に配置した
Si基板上に、トリメチルアルミニウムとN2Oガス
とを導入して、減圧気相成長法により前記Si基板
上にγ−Al2O3単結晶絶縁膜を成長させることを
特徴とする。 That is, in the present invention, the
The method is characterized in that trimethylaluminum and N 2 O gas are introduced onto the Si substrate, and a γ-Al 2 O 3 single crystal insulating film is grown on the Si substrate by low pressure vapor phase growth.
「実施例」
次に、本発明の実施例を挙げ、本発明を更に説
明する。"Example" Next, the present invention will be further explained by giving examples of the present invention.
基板として２インチのSi（100）ウエハーを用い
て、減圧気相成長装置内で、高周波誘導加熱によ
り基板温度950〜1100℃に加熱し、反応ガスとし
てN2ガスでバブリングししたトリメチルアルミ
ニウム10〜50sccmとN2Oガス10〜100sccmとを
用い、N2稀釈ガスを使用して反応装置内を約
30Torrの減圧下としてγ−Al2O3結晶膜のエピタ
キシヤル成長を行なつた。 Using a 2-inch Si (100) wafer as a substrate, the substrate temperature was heated to 950-1100°C by high-frequency induction heating in a reduced-pressure vapor phase growth apparatus, and trimethylaluminum 10~ was bubbled with N2 gas as a reaction gas. 50 sccm and 10-100 sccm of N2O gas, using N2 diluted gas to
Epitaxial growth of γ-Al 2 O 3 crystal film was performed under reduced pressure of 30 Torr.
上記のようにして成長した膜の組成を、Auger
電子分光法により分析し、サフアイア（α−
Al2O3）のAugerスペクトルと比較した結果、
Al2O3の組成をしていることが確認された。結晶
性については、第１図ａにRHEED像を示す。図
にみられるように、回折像はスポツト状になつて
いるものの、電子線の入射方向により回折像が変
わることから、単結晶膜が成長していることがわ
かる。また、第１図ｂに示すように、この膜は電
子顕微鏡により、反射回折パターンを解析するこ
とにより、γ−Al2O3（ａ＝7.95Å、ｃ＝7.79Å）
であることが判明した。エピタキシヤル方位の関
係は、RHEED像及びＸ線回折の結果から、Si
（100）面上にγ−Al2O3（100）が成長しているこ
とが確認された。 The composition of the film grown as described above was determined by Auger
Analyzed by electron spectroscopy, sapphire (α-
As a result of comparison with the Auger spectrum of Al 2 O 3 ),
It was confirmed that the composition was Al 2 O 3 . Regarding crystallinity, a RHEED image is shown in Figure 1a. As seen in the figure, although the diffraction image is spot-like, the fact that the diffraction image changes depending on the incident direction of the electron beam indicates that a single crystal film is growing. Furthermore, as shown in Figure 1b, this film was found to be γ-Al 2 O 3 (a = 7.95 Å, c = 7.79 Å) by analyzing the reflection diffraction pattern using an electron microscope.
It turned out to be. The relationship between the epitaxial orientation is determined from the RHEED image and the X-ray diffraction results.
It was confirmed that γ-Al 2 O 3 (100) was growing on the (100) plane.
更に上記膜は、第２図に示すオージエー電子分
光分析のスペクトルから、その組成がAlとＯと
からなつており、組成比もサフアイア（α−
Al2O3）と同じであることが確認された。 Furthermore, the composition of the above film is composed of Al and O, and the composition ratio is also that of sapphire (α-
It was confirmed that it is the same as Al 2 O 3 ).
上記のようにして得られた単結晶γ−Al2O3
は、高温（1100℃）で数時間熱処理しても安定で
あり、Siプロセスに十分な安定性を持つているこ
とが実験により確認されている。 Single crystal γ-Al 2 O 3 obtained as above
It has been experimentally confirmed that it is stable even after heat treatment at high temperatures (1100°C) for several hours, and has sufficient stability for Si processes.
またγ−Al2O3／Si界面準位が1.7×10-11cm
-2eV-1と小さく、3Vのゲート電圧でリーク電流
も9.7×10-11A／cm2であり、MOS素子のゲート膜
としても利用できる卓越した電気的特性を示し
た。尚、このときのγ−Al2O3膜の膜圧は500Å
であつた。第３図にMOS素子のＣ−Ｖ特性を示
すが、この図から本発明の絶縁膜は、ヒステリシ
スのない理想的な特性を示していることがわか
る。 Also, the γ-Al 2 O 3 /Si interface state is 1.7×10 -11 cm
-2 eV -1 , and the leakage current was 9.7×10 -11 A/cm 2 at a gate voltage of 3 V, showing excellent electrical properties that could be used as a gate film for MOS devices. The film thickness of the γ-Al 2 O 3 film at this time was 500 Å.
It was hot. FIG. 3 shows the CV characteristics of the MOS device, and it can be seen from this figure that the insulating film of the present invention exhibits ideal characteristics without hysteresis.
「発明の効果」
以上述べた如く本発明によるときは、著しく顕
著な電気的特性を示し且つ高温熱処理時の安定性
に優れた絶縁膜をSi基板上に容易に形成させるこ
とができるので、３次元集積回路やSOI素子実現
に貢献するところ極めて大きい。"Effects of the Invention" As described above, according to the present invention, it is possible to easily form an insulating film on a Si substrate that exhibits remarkable electrical characteristics and has excellent stability during high-temperature heat treatment. It will greatly contribute to the realization of dimensional integrated circuits and SOI devices.
第１図ａは、本発明の絶縁膜のRHEED像を示
す電子顕微鏡写真、第１図ｂは、本発明の絶縁膜
の反射電子線回折パターン、第２図は、γ−
Al2O3膜のオージエー電子分光分析のスペクトル
を示す線図、第３図は、γ−Al2O3をゲート絶縁
膜としたMOS素子の容量−電圧特性を示すグラ
フである。
FIG. 1a is an electron micrograph showing a RHEED image of the insulating film of the present invention, FIG. 1b is a reflection electron beam diffraction pattern of the insulating film of the present invention, and FIG. 2 is a γ-
FIG. 3, which is a diagram showing the spectrum of the Auger electron spectroscopy of the Al 2 O 3 film, is a graph showing the capacitance-voltage characteristics of a MOS element using γ-Al 2 O 3 as a gate insulating film.
Claims (1)
トリメチルアルミニウムとN2Oガスとを導入し
て、減圧気相成長法により前記Si基板上にγ−
Al2O3単結晶絶縁膜を成長させることを特徴とす
るSi基板上へのAl2O3単結晶膜のヘテロエピタキ
シヤル成長方法。1 On a Si substrate placed in a reduced pressure vapor phase growth apparatus,
By introducing trimethylaluminum and N 2 O gas, γ-
A method for heteroepitaxial growth of an Al 2 O 3 single crystal film on a Si substrate, the method comprising growing an Al 2 O 3 single crystal insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (en) | 1988-04-12 | 1988-04-12 | Heteroepitaxial growth of al2o3 single crystal film on si substrate by reduce pressure vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (en) | 1988-04-12 | 1988-04-12 | Heteroepitaxial growth of al2o3 single crystal film on si substrate by reduce pressure vapor growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261300A JPH01261300A (en) | 1989-10-18 |
| JPH057358B2 true JPH057358B2 (en) | 1993-01-28 |
Family
ID=13937363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8824188A Granted JPH01261300A (en) | 1988-04-12 | 1988-04-12 | Heteroepitaxial growth of al2o3 single crystal film on si substrate by reduce pressure vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261300A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU8036898A (en) | 1997-06-19 | 1999-01-04 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| JP4654439B2 (en) * | 2005-09-20 | 2011-03-23 | 国立大学法人豊橋技術科学大学 | Method for forming metal oxide thin film |
-
1988
- 1988-04-12 JP JP8824188A patent/JPH01261300A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01261300A (en) | 1989-10-18 |
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