JPS5982744A - Manufacture of sos substrate - Google Patents

Manufacture of sos substrate

Info

Publication number
JPS5982744A
JPS5982744A JP19317282A JP19317282A JPS5982744A JP S5982744 A JPS5982744 A JP S5982744A JP 19317282 A JP19317282 A JP 19317282A JP 19317282 A JP19317282 A JP 19317282A JP S5982744 A JPS5982744 A JP S5982744A
Authority
JP
Japan
Prior art keywords
silicon film
thickness
heat treatment
made
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19317282A
Inventor
Koji Egami
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP19317282A priority Critical patent/JPS5982744A/en
Publication of JPS5982744A publication Critical patent/JPS5982744A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Abstract

PURPOSE:To obtain an SOS substrate having superior crystallinity even when a silicon film is thin and having satisfactorily few microtwins by a method wherein the process that the SOS substrate made the single crystal silicon film of the prescribed thickness to grow is heat treated at a temperature higher than the growth temperature and moreover in an oxygen atmosphere, and thus formed oxide film is removed, is repeated up to reach the desired silicon film thickness. CONSTITUTION:A single crystal silicon film 2 is grown epitaxially at film thickness of 1mum or more on a single crystal sphhire substrate 1. As the growth condition, SiH4 gas is used, the growth temperature is made to 950 deg.C, and the growth speed is made to 1mum/min, for example. Then, the heat treatment temperature is selected to 1,100 deg.C as the temperature higher than the growth temperature 950 deg.C, and the heat treatment is performed in an oxigen atmosphere for 1.5hr. An oxide film generated by the heat treatment thereof is etched to be removed by a dilute hydrofluoric acid liquid. The silicon film 2 is thinned as much. The heat treatment and etching thereof are repeated for the 10 cycles in total, and thickness of the silicon film is made to the necessary thickness finally.
JP19317282A 1982-11-02 1982-11-02 Manufacture of sos substrate Pending JPS5982744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19317282A JPS5982744A (en) 1982-11-02 1982-11-02 Manufacture of sos substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19317282A JPS5982744A (en) 1982-11-02 1982-11-02 Manufacture of sos substrate

Publications (1)

Publication Number Publication Date
JPS5982744A true JPS5982744A (en) 1984-05-12

Family

ID=16303490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19317282A Pending JPS5982744A (en) 1982-11-02 1982-11-02 Manufacture of sos substrate

Country Status (1)

Country Link
JP (1) JPS5982744A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
WO1998058408A1 (en) * 1997-06-19 1998-12-23 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
WO2000019500A1 (en) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
JP2008192907A (en) * 2007-02-06 2008-08-21 Oki Electric Ind Co Ltd Forming method of sos substrate having silicon epitaxial film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
WO1998058408A1 (en) * 1997-06-19 1998-12-23 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
EP1037272A1 (en) * 1997-06-19 2000-09-20 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
US6528387B1 (en) 1997-06-19 2003-03-04 Asahi Kasei Kabushiki Kaisha SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same
EP1037272A4 (en) * 1997-06-19 2004-07-28 Asahi Chemical Ind Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
WO2000019500A1 (en) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
US6768175B1 (en) 1998-09-25 2004-07-27 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
JP2008192907A (en) * 2007-02-06 2008-08-21 Oki Electric Ind Co Ltd Forming method of sos substrate having silicon epitaxial film

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