JPH0571196B2 - - Google Patents
Info
- Publication number
- JPH0571196B2 JPH0571196B2 JP62123776A JP12377687A JPH0571196B2 JP H0571196 B2 JPH0571196 B2 JP H0571196B2 JP 62123776 A JP62123776 A JP 62123776A JP 12377687 A JP12377687 A JP 12377687A JP H0571196 B2 JPH0571196 B2 JP H0571196B2
- Authority
- JP
- Japan
- Prior art keywords
- order silane
- reaction
- silicon
- inert gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62123776A JPS63289968A (ja) | 1987-05-22 | 1987-05-22 | 非晶質太陽電池の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62123776A JPS63289968A (ja) | 1987-05-22 | 1987-05-22 | 非晶質太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63289968A JPS63289968A (ja) | 1988-11-28 |
JPH0571196B2 true JPH0571196B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=14868998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62123776A Granted JPS63289968A (ja) | 1987-05-22 | 1987-05-22 | 非晶質太陽電池の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63289968A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0731691U (ja) * | 1993-11-25 | 1995-06-13 | ダイヤテックス株式会社 | 大形収納袋及びその収納補助具 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100093111A1 (en) * | 2006-10-13 | 2010-04-15 | Omron Corporation | Method for manufacturing electronic device using plasma reactor processing system |
WO2008078471A1 (ja) * | 2006-12-25 | 2008-07-03 | Sharp Kabushiki Kaisha | 光電変換装置及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0612835B2 (ja) * | 1984-08-20 | 1994-02-16 | 三井東圧化学株式会社 | 光電変換素子の製法 |
-
1987
- 1987-05-22 JP JP62123776A patent/JPS63289968A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0731691U (ja) * | 1993-11-25 | 1995-06-13 | ダイヤテックス株式会社 | 大形収納袋及びその収納補助具 |
Also Published As
Publication number | Publication date |
---|---|
JPS63289968A (ja) | 1988-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5646050A (en) | Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition | |
US6121541A (en) | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys | |
KR910001742B1 (ko) | 광기전력 장치 | |
US5730808A (en) | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates | |
US5032884A (en) | Semiconductor pin device with interlayer or dopant gradient | |
JP4208281B2 (ja) | 積層型光起電力素子 | |
US7667133B2 (en) | Hybrid window layer for photovoltaic cells | |
EP1939947B1 (en) | Silicon-based thin-film photoelectric converter and method of manufacturing the same | |
EP0523919A1 (en) | Multijunction photovoltaic device and fabrication method | |
US20080173347A1 (en) | Method And Apparatus For A Semiconductor Structure | |
JP3047666B2 (ja) | シリコンオキサイド半導体膜の成膜方法 | |
US5061322A (en) | Method of producing p-type amorphous silicon carbide and solar cell including same | |
JPS59205770A (ja) | 光起電力装置およびその製造方法 | |
US5419783A (en) | Photovoltaic device and manufacturing method therefor | |
JP2616929B2 (ja) | 微結晶炭化ケイ素半導体膜の製造方法 | |
JP2007208093A (ja) | 堆積膜の形成方法及び光起電力素子の形成方法 | |
US4396793A (en) | Compensated amorphous silicon solar cell | |
Kondo et al. | An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates | |
JP2004260014A (ja) | 多層型薄膜光電変換装置 | |
US5104455A (en) | Amorphous semiconductor solar cell | |
JPH0595126A (ja) | 薄膜太陽電池およびその製造方法 | |
US4680607A (en) | Photovoltaic cell | |
JPH0571196B2 (enrdf_load_stackoverflow) | ||
JP2024547156A (ja) | 太陽電池及びそれを形成するための方法 | |
JPWO2005109526A1 (ja) | 薄膜光電変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |