JPH0571190B2 - - Google Patents
Info
- Publication number
- JPH0571190B2 JPH0571190B2 JP19760986A JP19760986A JPH0571190B2 JP H0571190 B2 JPH0571190 B2 JP H0571190B2 JP 19760986 A JP19760986 A JP 19760986A JP 19760986 A JP19760986 A JP 19760986A JP H0571190 B2 JPH0571190 B2 JP H0571190B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- drain
- source
- gate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 208000022010 Lhermitte-Duclos disease Diseases 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19760986A JPS6353975A (ja) | 1986-08-22 | 1986-08-22 | Ｍｉｓトランジスタ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19760986A JPS6353975A (ja) | 1986-08-22 | 1986-08-22 | Ｍｉｓトランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6353975A JPS6353975A (ja) | 1988-03-08 |
| JPH0571190B2 true JPH0571190B2 (nl) | 1993-10-06 |
Family
ID=16377317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19760986A Granted JPS6353975A (ja) | 1986-08-22 | 1986-08-22 | Ｍｉｓトランジスタ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6353975A (nl) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990974A (en) * | 1989-03-02 | 1991-02-05 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor |
| US5440160A (en) * | 1992-01-28 | 1995-08-08 | Thunderbird Technologies, Inc. | High saturation current, low leakage current fermi threshold field effect transistor |
| US5525822A (en) * | 1991-01-28 | 1996-06-11 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor including doping gradient regions |
| US5369295A (en) * | 1992-01-28 | 1994-11-29 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
| US5814869A (en) * | 1992-01-28 | 1998-09-29 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors |
| US5786620A (en) * | 1992-01-28 | 1998-07-28 | Thunderbird Technologies, Inc. | Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same |
| US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
| US5367186A (en) * | 1992-01-28 | 1994-11-22 | Thunderbird Technologies, Inc. | Bounded tub fermi threshold field effect transistor |
-
1986
- 1986-08-22 JP JP19760986A patent/JPS6353975A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6353975A (ja) | 1988-03-08 |
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