JPH0571190B2 - - Google Patents

Info

Publication number
JPH0571190B2
JPH0571190B2 JP61197609A JP19760986A JPH0571190B2 JP H0571190 B2 JPH0571190 B2 JP H0571190B2 JP 61197609 A JP61197609 A JP 61197609A JP 19760986 A JP19760986 A JP 19760986A JP H0571190 B2 JPH0571190 B2 JP H0571190B2
Authority
JP
Japan
Prior art keywords
channel
drain
source
gate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61197609A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353975A (ja
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61197609A priority Critical patent/JPS6353975A/ja
Publication of JPS6353975A publication Critical patent/JPS6353975A/ja
Publication of JPH0571190B2 publication Critical patent/JPH0571190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
JP61197609A 1986-08-22 1986-08-22 Ｍｉｓトランジスタ及びその製造方法 Granted JPS6353975A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61197609A JPS6353975A (ja) 1986-08-22 1986-08-22 Ｍｉｓトランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61197609A JPS6353975A (ja) 1986-08-22 1986-08-22 Ｍｉｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6353975A JPS6353975A (ja) 1988-03-08
JPH0571190B2 true JPH0571190B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=16377317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61197609A Granted JPS6353975A (ja) 1986-08-22 1986-08-22 Ｍｉｓトランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6353975A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same

Also Published As

Publication number Publication date
JPS6353975A (ja) 1988-03-08

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