JPH0571184B2 - - Google Patents
Info
- Publication number
- JPH0571184B2 JPH0571184B2 JP24717187A JP24717187A JPH0571184B2 JP H0571184 B2 JPH0571184 B2 JP H0571184B2 JP 24717187 A JP24717187 A JP 24717187A JP 24717187 A JP24717187 A JP 24717187A JP H0571184 B2 JPH0571184 B2 JP H0571184B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- resistance
- gaas
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- 230000005684 electric field Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24717187A JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24717187A JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6489358A JPS6489358A (en) | 1989-04-03 |
| JPH0571184B2 true JPH0571184B2 (enExample) | 1993-10-06 |
Family
ID=17159497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24717187A Granted JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489358A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4058223B2 (ja) | 1999-10-01 | 2008-03-05 | 日本碍子株式会社 | 圧電／電歪デバイス及びその製造方法 |
-
1987
- 1987-09-29 JP JP24717187A patent/JPS6489358A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6489358A (en) | 1989-04-03 |
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