JPH0570928B2 - - Google Patents

Info

Publication number
JPH0570928B2
JPH0570928B2 JP13590683A JP13590683A JPH0570928B2 JP H0570928 B2 JPH0570928 B2 JP H0570928B2 JP 13590683 A JP13590683 A JP 13590683A JP 13590683 A JP13590683 A JP 13590683A JP H0570928 B2 JPH0570928 B2 JP H0570928B2
Authority
JP
Japan
Prior art keywords
silicon
semiconductor
film
amorphous
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13590683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6028223A (ja
Inventor
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP13590683A priority Critical patent/JPS6028223A/ja
Publication of JPS6028223A publication Critical patent/JPS6028223A/ja
Publication of JPH0570928B2 publication Critical patent/JPH0570928B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP13590683A 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法 Granted JPS6028223A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13590683A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13590683A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6028223A JPS6028223A (ja) 1985-02-13
JPH0570928B2 true JPH0570928B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=15162589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13590683A Granted JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6028223A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293793A (ja) * 1996-04-26 1997-11-11 Mitsubishi Electric Corp 薄膜トランジスタを有する半導体装置およびその製造方法
KR100843741B1 (ko) 2007-03-31 2008-07-04 동국대학교 산학협력단 실리콘적층 사파이어 박막의 제조방법

Also Published As

Publication number Publication date
JPS6028223A (ja) 1985-02-13

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