JPH0569318B2 - - Google Patents
Info
- Publication number
- JPH0569318B2 JPH0569318B2 JP61290264A JP29026486A JPH0569318B2 JP H0569318 B2 JPH0569318 B2 JP H0569318B2 JP 61290264 A JP61290264 A JP 61290264A JP 29026486 A JP29026486 A JP 29026486A JP H0569318 B2 JPH0569318 B2 JP H0569318B2
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- layer
- group compound
- compound semiconductor
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000005253 cladding Methods 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 35
- 238000000034 method Methods 0.000 description 27
- 230000010355 oscillation Effects 0.000 description 25
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 201000009310 astigmatism Diseases 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29026486A JPS63142879A (ja) | 1986-12-05 | 1986-12-05 | 半導体レーザ及び半導体レーザの製造方法 |
| FR8714606A FR2606223B1 (fr) | 1986-10-29 | 1987-10-22 | Laser a semiconducteur et son procede de fabrication |
| US07/113,788 US4856013A (en) | 1986-10-29 | 1987-10-28 | Semiconductor laser having an active layer and cladding layer |
| DE19873736497 DE3736497A1 (de) | 1986-10-29 | 1987-10-28 | Halbleiterlaser und verfahren zu seiner herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29026486A JPS63142879A (ja) | 1986-12-05 | 1986-12-05 | 半導体レーザ及び半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63142879A JPS63142879A (ja) | 1988-06-15 |
| JPH0569318B2 true JPH0569318B2 (xx) | 1993-09-30 |
Family
ID=17753887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29026486A Granted JPS63142879A (ja) | 1986-10-29 | 1986-12-05 | 半導体レーザ及び半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142879A (xx) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100274283B1 (ko) * | 1991-03-28 | 2001-01-15 | 야스카와 히데아키 | 면 발광형 반도체 레이저 및 그 제조 방법 |
| JP3885978B2 (ja) * | 1997-01-31 | 2007-02-28 | シャープ株式会社 | 利得結合分布帰還型半導体レーザ装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128092A (en) * | 1981-01-30 | 1982-08-09 | Sanyo Electric Co Ltd | Imbedded type semiconductor laser device |
| JPS6058695A (ja) * | 1983-09-12 | 1985-04-04 | Nec Corp | 埋め込み型半導体レ−ザ素子の製造方法 |
| JPS61144894A (ja) * | 1984-12-19 | 1986-07-02 | Sony Corp | 半導体レ−ザ−の製法 |
-
1986
- 1986-12-05 JP JP29026486A patent/JPS63142879A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128092A (en) * | 1981-01-30 | 1982-08-09 | Sanyo Electric Co Ltd | Imbedded type semiconductor laser device |
| JPS6058695A (ja) * | 1983-09-12 | 1985-04-04 | Nec Corp | 埋め込み型半導体レ−ザ素子の製造方法 |
| JPS61144894A (ja) * | 1984-12-19 | 1986-07-02 | Sony Corp | 半導体レ−ザ−の製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63142879A (ja) | 1988-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |