JPH0568868B2 - - Google Patents

Info

Publication number
JPH0568868B2
JPH0568868B2 JP60027238A JP2723885A JPH0568868B2 JP H0568868 B2 JPH0568868 B2 JP H0568868B2 JP 60027238 A JP60027238 A JP 60027238A JP 2723885 A JP2723885 A JP 2723885A JP H0568868 B2 JPH0568868 B2 JP H0568868B2
Authority
JP
Japan
Prior art keywords
region
regions
conductivity type
semiconductor substrate
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60027238A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61185979A (ja
Inventor
Yutaka Hayashi
Yoshimitsu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Matsushita Electric Works Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP60027238A priority Critical patent/JPS61185979A/ja
Publication of JPS61185979A publication Critical patent/JPS61185979A/ja
Publication of JPH0568868B2 publication Critical patent/JPH0568868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP60027238A 1985-02-13 1985-02-13 集積型光電変換素子 Granted JPS61185979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60027238A JPS61185979A (ja) 1985-02-13 1985-02-13 集積型光電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60027238A JPS61185979A (ja) 1985-02-13 1985-02-13 集積型光電変換素子

Publications (2)

Publication Number Publication Date
JPS61185979A JPS61185979A (ja) 1986-08-19
JPH0568868B2 true JPH0568868B2 (cs) 1993-09-29

Family

ID=12215491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60027238A Granted JPS61185979A (ja) 1985-02-13 1985-02-13 集積型光電変換素子

Country Status (1)

Country Link
JP (1) JPS61185979A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216567A (ja) * 1985-07-15 1987-01-24 Sharp Corp 回路内蔵受光素子
US5162887A (en) * 1988-10-31 1992-11-10 Texas Instruments Incorporated Buried junction photodiode
EP0579045B1 (de) * 1992-07-16 1995-02-22 Landis & Gyr Technology Innovation AG Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker

Also Published As

Publication number Publication date
JPS61185979A (ja) 1986-08-19

Similar Documents

Publication Publication Date Title
DE3751133D1 (de) Sperrschichtphotozelle mit P-I-N Übergängen des heterogenen Typs.
US3590345A (en) Double wall pn junction isolation for monolithic integrated circuit components
US4920395A (en) High sensitivity photodiode
JPS61129883A (ja) 光検出装置
JPH0568868B2 (cs)
DK157468B (da) Diode til monolitisk integreret kreds
US5027182A (en) High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks
JPS5511371A (en) Semiconductor laser system
JPS6136713B2 (cs)
JPS5996781A (ja) ホトダイオ−ド
JPH0614559B2 (ja) 集積型光電変換素子
JPS6223098Y2 (cs)
JP2670553B2 (ja) 半導体受光・増幅装置
JPS6214478A (ja) フオトセンサ
JP2501556B2 (ja) 光センサおよびその製造方法
CA1211563A (en) Integrated circuit arrangement
JPH0440272Y2 (cs)
JPH069505Y2 (ja) パルス発生回路装置
JP3131694B2 (ja) パワートランジスタデバイス
JP2830092B2 (ja) 半導体装置の静電保護素子
KR930017199A (ko) 화합물 반도체 소자 및 그 제조방법
JP2022143051A5 (cs)
JPH0642557B2 (ja) 静電保護ダイオードを有する半導体装置
Katz Kim et al.[45] Date of Patent: Jun. 25, 1991
JPH0464184B2 (cs)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term