JPH0567650B2 - - Google Patents

Info

Publication number
JPH0567650B2
JPH0567650B2 JP62261843A JP26184387A JPH0567650B2 JP H0567650 B2 JPH0567650 B2 JP H0567650B2 JP 62261843 A JP62261843 A JP 62261843A JP 26184387 A JP26184387 A JP 26184387A JP H0567650 B2 JPH0567650 B2 JP H0567650B2
Authority
JP
Japan
Prior art keywords
epoxy resin
resin
semiconductor device
formula
epoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62261843A
Other languages
Japanese (ja)
Other versions
JPH01105562A (en
Inventor
Naoki Mogi
Shinichi Kuroki
Koichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP26184387A priority Critical patent/JPH01105562A/en
Publication of JPH01105562A publication Critical patent/JPH01105562A/en
Publication of JPH0567650B2 publication Critical patent/JPH0567650B2/ja
Granted legal-status Critical Current

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は耐熱衝撃性に優れた樹脂封止型半導体
装置に関すものであり、更に詳しくは急激な温度
変化を受けても耐クラツク性に非常に優れたエポ
キシ樹脂組成物によつて封止された半導体装置に
関するものである。 〔従来技術〕 最近の電気製品における軽薄短小化傾向から半
導体装置の実装密度を向上させるために半導体セ
ツトメーカーでは従来のスルーホール実装から表
面実装への移行が進んでいる。 表面実装での自動化ラインではリードの半田付
け時に半導体装置は急激な温度変化を受け、この
ために樹脂成形部にクラツクが生じたり、リード
樹脂間の界面が劣化し、この結果として耐湿性が
低下するなどの問題が生じてしまう。 これらの問題を解決するために半田浸漬時の熱
衝撃を緩和する目的で熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や、各種シリコーン
化合物の添加(特開昭62−115850号公報)、62−
116654号公報、62−128162号公報)、更にはシリ
コーン変性(特開昭62−136860号公報)などの手
法で対処しているが、いずれも半田浸漬後成形部
にクラツクが生じてしまい信頼性の優れた樹脂封
止型半導体装置が得られるまでには至らなかつ
た。 特にこれらの添加剤の添加については成形時の
作業性が悪化する問題が生じてしまい、樹脂自体
の構造を変えて特性を改善する方法が考えられて
きた。 これらの樹脂自体の構造を変える方法も、反応
工程の複雑化等といろいろの欠点があり、未だ満
足するものが得られていない。 ところで、硬化剤としてジシクロペンタジエ
ン・フエノリツクポリマーを用いる方法としては
特開昭62−96521号公報、62−104830号公報が、
発表されているが、これらはいずれも用途目的を
異にし製造方法も異なる。特に特開昭62−96521
号公報については積層板や、多層プリント板の製
造に関するものであり、最終組成物が、ワニス状
である。また特開昭62−104830号公報の方法につ
いてはイミダゾール系の硬化促進剤を使用してお
り、耐湿性が、大幅に低下する。更に最終組成物
に充填材が配合されておらず半導体封止用樹脂組
成物としての強度や熱膨張係数の特性を満足する
ことが出来ない。 〔発明の目的〕 本発明は従来の樹脂組成物の使用によつて得る
ことの出来なかつた耐熱衝撃性に優れ、信頼性に
優れた樹脂封止半導体装置を得んとして研究した
結果、エポキシ樹脂とジシクロペンタジエン・フ
エノリツクポリマーを硬化剤として用い、更にト
リフエニルホスフイン、又は1,8−ジアザビシ
クロ(5,4,0)ウンデセンを単独もしくは混
合したものを必須成分とするエポキシ樹脂組成物
を使用することにより耐熱衝撃性に優れ、信頼性
に優れる樹脂封止型半導体装置が得られることを
見いだし本願発明を完成したものである。 〔発明の構成〕 本発明は、エポキシ樹脂、硬化剤として下記の
一般式(1)で示されるジシクロペンタジエン・フエ
ノリツクポリマーをエポキシ樹脂に対して当量比
(エポキシ基数/水酸基数)が、0.5〜1.5となる
ような量及び硬化促進剤としてトリフエニルホス
フイン、又は1,8−ジアザビシクロ(5,4,
0)ウンデセンを単独もしくは1種以上混合した
ものを必須成分とするエポキシ樹脂組成物により
封止したことを特徴とする樹脂封止型半導体装置
に関するものである。 一般式(1)
[Industrial Application Field] The present invention relates to a resin-sealed semiconductor device with excellent thermal shock resistance, and more specifically to an epoxy resin composition with excellent crack resistance even when subjected to rapid temperature changes. The present invention relates to a semiconductor device sealed with a material. [Prior Art] With the recent trend toward lighter, thinner, and shorter electronic products, semiconductor set manufacturers are increasingly shifting from conventional through-hole mounting to surface mounting in order to improve the packaging density of semiconductor devices. On automated surface mounting lines, semiconductor devices are subject to rapid temperature changes when soldering leads, which can cause cracks in the resin molding, deteriorate the interface between lead resins, and reduce moisture resistance as a result. Problems such as doing this may occur. To solve these problems, thermoplastic oligomers are added (Japanese Patent Laid-Open No. 62-115849) and various silicone compounds are added (Japanese Patent Laid-Open No. 62-115850) to alleviate the thermal shock during solder immersion. ), 62−
116654, 62-128162) and silicone modification (Japanese Patent Application Laid-Open No. 136860/1983), these methods all lead to cracks in the molded part after being dipped in solder, resulting in poor reliability. However, it has not been possible to obtain an excellent resin-sealed semiconductor device. In particular, the addition of these additives poses the problem of deteriorating workability during molding, and methods have been considered to improve the properties by changing the structure of the resin itself. These methods of changing the structure of the resin itself have various drawbacks, such as complicating the reaction process, and so far no satisfactory product has been obtained. By the way, JP-A-62-96521 and JP-A-62-104830 disclose methods using dicyclopentadiene phenolic polymer as a curing agent.
Although these have been announced, they all have different purposes and manufacturing methods. Especially JP-A-62-96521
The publication concerned with the production of laminates and multilayer printed boards, and the final composition is in the form of a varnish. Furthermore, the method disclosed in JP-A-62-104830 uses an imidazole-based curing accelerator, which significantly reduces moisture resistance. Furthermore, the final composition does not contain a filler and cannot satisfy the properties of strength and thermal expansion coefficient as a resin composition for semiconductor encapsulation. [Object of the Invention] The present invention was developed as a result of research aimed at obtaining a resin-encapsulated semiconductor device with excellent thermal shock resistance and reliability, which could not be obtained by using conventional resin compositions. An epoxy resin composition using a dicyclopentadiene phenolic polymer as a curing agent and further containing triphenylphosphine or 1,8-diazabicyclo(5,4,0)undecene alone or in combination as an essential component. The present invention was completed based on the discovery that a resin-sealed semiconductor device having excellent thermal shock resistance and reliability can be obtained by using the above method. [Structure of the Invention] The present invention uses an epoxy resin and a dicyclopentadiene phenolic polymer represented by the following general formula (1) as a curing agent in an equivalent ratio (number of epoxy groups/number of hydroxyl groups) to the epoxy resin. triphenylphosphine or 1,8-diazabicyclo(5,4,
0) The present invention relates to a resin-sealed semiconductor device characterized in that it is sealed with an epoxy resin composition containing undecene alone or in combination of one or more types thereof as an essential component. General formula (1)

〔発明の効果〕〔Effect of the invention〕

このように本発明による樹脂封止型半導体装置
は急激な温度変化を受けた後の耐湿性及び耐クラ
ツク性に優れるものである。従つて最近の表面実
装における要求特性、特に耐熱衝撃性に非常に優
れ信頼性の高いものであることから本発明の産業
的意味役割は非常に大きい。 〔実施例〕 エポキシ樹脂、硬化剤、硬化促進剤及び他の原
料を第1表に従つて配合し、ヘンシエルミキサー
で混合し、ユニーダーで混練した後、冷却粉砕
し、実施例1〜4及び比較例1〜7のエポキシ樹
脂組成物を得た。 第1表の配合によつて得られたエポキシ樹脂組
成物を用いてアルミ模擬素子を組み込んだモニタ
ーICを成形温度175℃、注入時間15秒環硬化時間
90秒でトランスフアー成形し、175℃、8時間ポ
ストキユアーし、樹脂封止型半導体装置を得た。 得られた樹脂封止型半導体装置について成形物
の表面硬度、耐湿性及び耐クラツク性の評価を行
つた結果を第2表で示す。 第2表に示すように、実施例は比較例に比べ各
信頼性に優れ、特に半田浸漬後の耐湿性と耐ブラ
ツク性が優れていることがわかる。
As described above, the resin-sealed semiconductor device according to the present invention has excellent moisture resistance and crack resistance after being subjected to rapid temperature changes. Therefore, the present invention plays a very important role in industry since it has excellent properties required in recent surface mounting, especially thermal shock resistance, and is highly reliable. [Example] Epoxy resin, curing agent, curing accelerator and other raw materials were blended according to Table 1, mixed in a Henschel mixer, kneaded in a uniter, cooled and pulverized. Epoxy resin compositions of Comparative Examples 1 to 7 were obtained. Using the epoxy resin composition obtained according to the formulation shown in Table 1, a monitor IC incorporating an aluminum simulated element was molded at a molding temperature of 175°C and an injection time of 15 seconds, and a ring curing time of 15 seconds.
Transfer molding was performed for 90 seconds and post-curing was performed at 175° C. for 8 hours to obtain a resin-sealed semiconductor device. Table 2 shows the results of evaluating the surface hardness, moisture resistance, and crack resistance of the molded product of the resin-sealed semiconductor device obtained. As shown in Table 2, it can be seen that the Examples are superior in each reliability as compared to the Comparative Examples, and are particularly superior in moisture resistance and black resistance after solder immersion.

【表】【table】

【表】【table】

【表】【table】

Claims (1)

【特許請求の範囲】 1 エポキシ樹脂、硬化剤として下記の一般式(1)
で示されるジシクロペンタジエン・フエノリツク
ポリマーをエポキシ樹脂に対して当量比(エポキ
シ基数/水酸基数)が 0.5〜1.5となるような
量、及び硬化促進剤としてトリフエニルホスフイ
ン又は1,8−ジアザビシクロ(5,4,0)ウ
ンデセンを単独もしくは混合したものを必須成分
とするエポキシ樹脂組成物により封止したことを
特徴とする樹脂封止型半導体装置。 【化】 (式中のRは水素原子、アルキル基、塩素、臭
素等のハロゲンなどを表わす。またnは0〜15の
整数を表わす。)
[Scope of Claims] 1 Epoxy resin and curing agent according to the following general formula (1)
An amount of the dicyclopentadiene phenolic polymer represented by the following formula to the epoxy resin such that the equivalent ratio (number of epoxy groups/number of hydroxyl groups) is 0.5 to 1.5, and triphenylphosphine or 1,8- as a curing accelerator. 1. A resin-sealed semiconductor device characterized in that it is encapsulated with an epoxy resin composition containing diazabicyclo(5,4,0) undecene alone or in combination as an essential component. [Chemical formula] (R in the formula represents a hydrogen atom, an alkyl group, a halogen such as chlorine, bromine, etc., and n represents an integer from 0 to 15.)
JP26184387A 1987-10-19 1987-10-19 Resin-sealed semiconductor device Granted JPH01105562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26184387A JPH01105562A (en) 1987-10-19 1987-10-19 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26184387A JPH01105562A (en) 1987-10-19 1987-10-19 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH01105562A JPH01105562A (en) 1989-04-24
JPH0567650B2 true JPH0567650B2 (en) 1993-09-27

Family

ID=17367518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26184387A Granted JPH01105562A (en) 1987-10-19 1987-10-19 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH01105562A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689112B2 (en) * 1989-11-25 1994-11-09 松下電工株式会社 Epoxy resin composition for semiconductor encapsulation
JPH03278450A (en) * 1990-03-27 1991-12-10 Matsushita Electric Works Ltd Resin-sealed semiconductor device
JPH04207057A (en) * 1990-11-30 1992-07-29 Matsushita Electric Works Ltd Resin-sealed semiconductor device
JPH0597970A (en) * 1991-10-07 1993-04-20 Shin Etsu Chem Co Ltd Thermosetting resin composition and semiconductor device
JP2643706B2 (en) * 1991-11-26 1997-08-20 信越化学工業株式会社 Thermosetting resin composition and semiconductor device
EP1057817A4 (en) 1998-02-19 2001-12-12 Hitachi Chemical Co Ltd Novel compounds, hardening accelerator, resin composition, and electronic part device
WO2006134865A1 (en) * 2005-06-16 2006-12-21 San-Apro Limited Hardening accelerator for epoxy resin
KR200457970Y1 (en) * 2008-10-01 2012-01-16 손성철 Toothpick case

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62184020A (en) * 1986-02-07 1987-08-12 Toshiba Chem Corp Sealing resin composition
JPS62201922A (en) * 1985-10-31 1987-09-05 Sanyo Kokusaku Pulp Co Ltd Epoxy resin composition
JPH01101362A (en) * 1987-10-14 1989-04-19 Sanyo Kokusaku Pulp Co Ltd Resin composition
JPH01104615A (en) * 1987-10-16 1989-04-21 Sanyo Kokusaku Pulp Co Ltd Flame retardant epoxy resin composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201922A (en) * 1985-10-31 1987-09-05 Sanyo Kokusaku Pulp Co Ltd Epoxy resin composition
JPS62184020A (en) * 1986-02-07 1987-08-12 Toshiba Chem Corp Sealing resin composition
JPH01101362A (en) * 1987-10-14 1989-04-19 Sanyo Kokusaku Pulp Co Ltd Resin composition
JPH01104615A (en) * 1987-10-16 1989-04-21 Sanyo Kokusaku Pulp Co Ltd Flame retardant epoxy resin composition

Also Published As

Publication number Publication date
JPH01105562A (en) 1989-04-24

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