JPH0567650B2 - - Google Patents
Info
- Publication number
- JPH0567650B2 JPH0567650B2 JP62261843A JP26184387A JPH0567650B2 JP H0567650 B2 JPH0567650 B2 JP H0567650B2 JP 62261843 A JP62261843 A JP 62261843A JP 26184387 A JP26184387 A JP 26184387A JP H0567650 B2 JPH0567650 B2 JP H0567650B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- semiconductor device
- formula
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- FHNCCAGEZMNIHZ-UHFFFAOYSA-N 3,4,5,5a,6,7,8,9-octahydro-2h-1,2-benzodiazepine Chemical compound N1CCCC2CCCCC2=N1 FHNCCAGEZMNIHZ-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 230000035939 shock Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Description
〔産業上の利用分野〕
本発明は耐熱衝撃性に優れた樹脂封止型半導体
装置に関すものであり、更に詳しくは急激な温度
変化を受けても耐クラツク性に非常に優れたエポ
キシ樹脂組成物によつて封止された半導体装置に
関するものである。
〔従来技術〕
最近の電気製品における軽薄短小化傾向から半
導体装置の実装密度を向上させるために半導体セ
ツトメーカーでは従来のスルーホール実装から表
面実装への移行が進んでいる。
表面実装での自動化ラインではリードの半田付
け時に半導体装置は急激な温度変化を受け、この
ために樹脂成形部にクラツクが生じたり、リード
樹脂間の界面が劣化し、この結果として耐湿性が
低下するなどの問題が生じてしまう。
これらの問題を解決するために半田浸漬時の熱
衝撃を緩和する目的で熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や、各種シリコーン
化合物の添加(特開昭62−115850号公報)、62−
116654号公報、62−128162号公報)、更にはシリ
コーン変性(特開昭62−136860号公報)などの手
法で対処しているが、いずれも半田浸漬後成形部
にクラツクが生じてしまい信頼性の優れた樹脂封
止型半導体装置が得られるまでには至らなかつ
た。
特にこれらの添加剤の添加については成形時の
作業性が悪化する問題が生じてしまい、樹脂自体
の構造を変えて特性を改善する方法が考えられて
きた。
これらの樹脂自体の構造を変える方法も、反応
工程の複雑化等といろいろの欠点があり、未だ満
足するものが得られていない。
ところで、硬化剤としてジシクロペンタジエ
ン・フエノリツクポリマーを用いる方法としては
特開昭62−96521号公報、62−104830号公報が、
発表されているが、これらはいずれも用途目的を
異にし製造方法も異なる。特に特開昭62−96521
号公報については積層板や、多層プリント板の製
造に関するものであり、最終組成物が、ワニス状
である。また特開昭62−104830号公報の方法につ
いてはイミダゾール系の硬化促進剤を使用してお
り、耐湿性が、大幅に低下する。更に最終組成物
に充填材が配合されておらず半導体封止用樹脂組
成物としての強度や熱膨張係数の特性を満足する
ことが出来ない。
〔発明の目的〕
本発明は従来の樹脂組成物の使用によつて得る
ことの出来なかつた耐熱衝撃性に優れ、信頼性に
優れた樹脂封止半導体装置を得んとして研究した
結果、エポキシ樹脂とジシクロペンタジエン・フ
エノリツクポリマーを硬化剤として用い、更にト
リフエニルホスフイン、又は1,8−ジアザビシ
クロ(5,4,0)ウンデセンを単独もしくは混
合したものを必須成分とするエポキシ樹脂組成物
を使用することにより耐熱衝撃性に優れ、信頼性
に優れる樹脂封止型半導体装置が得られることを
見いだし本願発明を完成したものである。
〔発明の構成〕
本発明は、エポキシ樹脂、硬化剤として下記の
一般式(1)で示されるジシクロペンタジエン・フエ
ノリツクポリマーをエポキシ樹脂に対して当量比
(エポキシ基数/水酸基数)が、0.5〜1.5となる
ような量及び硬化促進剤としてトリフエニルホス
フイン、又は1,8−ジアザビシクロ(5,4,
0)ウンデセンを単独もしくは1種以上混合した
ものを必須成分とするエポキシ樹脂組成物により
封止したことを特徴とする樹脂封止型半導体装置
に関するものである。
一般式(1)
[Industrial Application Field] The present invention relates to a resin-sealed semiconductor device with excellent thermal shock resistance, and more specifically to an epoxy resin composition with excellent crack resistance even when subjected to rapid temperature changes. The present invention relates to a semiconductor device sealed with a material. [Prior Art] With the recent trend toward lighter, thinner, and shorter electronic products, semiconductor set manufacturers are increasingly shifting from conventional through-hole mounting to surface mounting in order to improve the packaging density of semiconductor devices. On automated surface mounting lines, semiconductor devices are subject to rapid temperature changes when soldering leads, which can cause cracks in the resin molding, deteriorate the interface between lead resins, and reduce moisture resistance as a result. Problems such as doing this may occur. To solve these problems, thermoplastic oligomers are added (Japanese Patent Laid-Open No. 62-115849) and various silicone compounds are added (Japanese Patent Laid-Open No. 62-115850) to alleviate the thermal shock during solder immersion. ), 62−
116654, 62-128162) and silicone modification (Japanese Patent Application Laid-Open No. 136860/1983), these methods all lead to cracks in the molded part after being dipped in solder, resulting in poor reliability. However, it has not been possible to obtain an excellent resin-sealed semiconductor device. In particular, the addition of these additives poses the problem of deteriorating workability during molding, and methods have been considered to improve the properties by changing the structure of the resin itself. These methods of changing the structure of the resin itself have various drawbacks, such as complicating the reaction process, and so far no satisfactory product has been obtained. By the way, JP-A-62-96521 and JP-A-62-104830 disclose methods using dicyclopentadiene phenolic polymer as a curing agent.
Although these have been announced, they all have different purposes and manufacturing methods. Especially JP-A-62-96521
The publication concerned with the production of laminates and multilayer printed boards, and the final composition is in the form of a varnish. Furthermore, the method disclosed in JP-A-62-104830 uses an imidazole-based curing accelerator, which significantly reduces moisture resistance. Furthermore, the final composition does not contain a filler and cannot satisfy the properties of strength and thermal expansion coefficient as a resin composition for semiconductor encapsulation. [Object of the Invention] The present invention was developed as a result of research aimed at obtaining a resin-encapsulated semiconductor device with excellent thermal shock resistance and reliability, which could not be obtained by using conventional resin compositions. An epoxy resin composition using a dicyclopentadiene phenolic polymer as a curing agent and further containing triphenylphosphine or 1,8-diazabicyclo(5,4,0)undecene alone or in combination as an essential component. The present invention was completed based on the discovery that a resin-sealed semiconductor device having excellent thermal shock resistance and reliability can be obtained by using the above method. [Structure of the Invention] The present invention uses an epoxy resin and a dicyclopentadiene phenolic polymer represented by the following general formula (1) as a curing agent in an equivalent ratio (number of epoxy groups/number of hydroxyl groups) to the epoxy resin. triphenylphosphine or 1,8-diazabicyclo(5,4,
0) The present invention relates to a resin-sealed semiconductor device characterized in that it is sealed with an epoxy resin composition containing undecene alone or in combination of one or more types thereof as an essential component. General formula (1)
このように本発明による樹脂封止型半導体装置
は急激な温度変化を受けた後の耐湿性及び耐クラ
ツク性に優れるものである。従つて最近の表面実
装における要求特性、特に耐熱衝撃性に非常に優
れ信頼性の高いものであることから本発明の産業
的意味役割は非常に大きい。
〔実施例〕
エポキシ樹脂、硬化剤、硬化促進剤及び他の原
料を第1表に従つて配合し、ヘンシエルミキサー
で混合し、ユニーダーで混練した後、冷却粉砕
し、実施例1〜4及び比較例1〜7のエポキシ樹
脂組成物を得た。
第1表の配合によつて得られたエポキシ樹脂組
成物を用いてアルミ模擬素子を組み込んだモニタ
ーICを成形温度175℃、注入時間15秒環硬化時間
90秒でトランスフアー成形し、175℃、8時間ポ
ストキユアーし、樹脂封止型半導体装置を得た。
得られた樹脂封止型半導体装置について成形物
の表面硬度、耐湿性及び耐クラツク性の評価を行
つた結果を第2表で示す。
第2表に示すように、実施例は比較例に比べ各
信頼性に優れ、特に半田浸漬後の耐湿性と耐ブラ
ツク性が優れていることがわかる。
As described above, the resin-sealed semiconductor device according to the present invention has excellent moisture resistance and crack resistance after being subjected to rapid temperature changes. Therefore, the present invention plays a very important role in industry since it has excellent properties required in recent surface mounting, especially thermal shock resistance, and is highly reliable. [Example] Epoxy resin, curing agent, curing accelerator and other raw materials were blended according to Table 1, mixed in a Henschel mixer, kneaded in a uniter, cooled and pulverized. Epoxy resin compositions of Comparative Examples 1 to 7 were obtained. Using the epoxy resin composition obtained according to the formulation shown in Table 1, a monitor IC incorporating an aluminum simulated element was molded at a molding temperature of 175°C and an injection time of 15 seconds, and a ring curing time of 15 seconds.
Transfer molding was performed for 90 seconds and post-curing was performed at 175° C. for 8 hours to obtain a resin-sealed semiconductor device. Table 2 shows the results of evaluating the surface hardness, moisture resistance, and crack resistance of the molded product of the resin-sealed semiconductor device obtained. As shown in Table 2, it can be seen that the Examples are superior in each reliability as compared to the Comparative Examples, and are particularly superior in moisture resistance and black resistance after solder immersion.
【表】【table】
【表】【table】
Claims (1)
で示されるジシクロペンタジエン・フエノリツク
ポリマーをエポキシ樹脂に対して当量比(エポキ
シ基数/水酸基数)が 0.5〜1.5となるような
量、及び硬化促進剤としてトリフエニルホスフイ
ン又は1,8−ジアザビシクロ(5,4,0)ウ
ンデセンを単独もしくは混合したものを必須成分
とするエポキシ樹脂組成物により封止したことを
特徴とする樹脂封止型半導体装置。 【化】 (式中のRは水素原子、アルキル基、塩素、臭
素等のハロゲンなどを表わす。またnは0〜15の
整数を表わす。)[Scope of Claims] 1 Epoxy resin and curing agent according to the following general formula (1)
An amount of the dicyclopentadiene phenolic polymer represented by the following formula to the epoxy resin such that the equivalent ratio (number of epoxy groups/number of hydroxyl groups) is 0.5 to 1.5, and triphenylphosphine or 1,8- as a curing accelerator. 1. A resin-sealed semiconductor device characterized in that it is encapsulated with an epoxy resin composition containing diazabicyclo(5,4,0) undecene alone or in combination as an essential component. [Chemical formula] (R in the formula represents a hydrogen atom, an alkyl group, a halogen such as chlorine, bromine, etc., and n represents an integer from 0 to 15.)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26184387A JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26184387A JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01105562A JPH01105562A (en) | 1989-04-24 |
JPH0567650B2 true JPH0567650B2 (en) | 1993-09-27 |
Family
ID=17367518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26184387A Granted JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01105562A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0689112B2 (en) * | 1989-11-25 | 1994-11-09 | 松下電工株式会社 | Epoxy resin composition for semiconductor encapsulation |
JPH03278450A (en) * | 1990-03-27 | 1991-12-10 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
JPH04207057A (en) * | 1990-11-30 | 1992-07-29 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
JPH0597970A (en) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and semiconductor device |
JP2643706B2 (en) * | 1991-11-26 | 1997-08-20 | 信越化学工業株式会社 | Thermosetting resin composition and semiconductor device |
EP1057817A4 (en) | 1998-02-19 | 2001-12-12 | Hitachi Chemical Co Ltd | Novel compounds, hardening accelerator, resin composition, and electronic part device |
WO2006134865A1 (en) * | 2005-06-16 | 2006-12-21 | San-Apro Limited | Hardening accelerator for epoxy resin |
KR200457970Y1 (en) * | 2008-10-01 | 2012-01-16 | 손성철 | Toothpick case |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
JPS62201922A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
JPH01101362A (en) * | 1987-10-14 | 1989-04-19 | Sanyo Kokusaku Pulp Co Ltd | Resin composition |
JPH01104615A (en) * | 1987-10-16 | 1989-04-21 | Sanyo Kokusaku Pulp Co Ltd | Flame retardant epoxy resin composition |
-
1987
- 1987-10-19 JP JP26184387A patent/JPH01105562A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62201922A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
JPH01101362A (en) * | 1987-10-14 | 1989-04-19 | Sanyo Kokusaku Pulp Co Ltd | Resin composition |
JPH01104615A (en) * | 1987-10-16 | 1989-04-21 | Sanyo Kokusaku Pulp Co Ltd | Flame retardant epoxy resin composition |
Also Published As
Publication number | Publication date |
---|---|
JPH01105562A (en) | 1989-04-24 |
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