JPH01105562A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH01105562A JPH01105562A JP26184387A JP26184387A JPH01105562A JP H01105562 A JPH01105562 A JP H01105562A JP 26184387 A JP26184387 A JP 26184387A JP 26184387 A JP26184387 A JP 26184387A JP H01105562 A JPH01105562 A JP H01105562A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- semiconductor device
- resin
- composition
- sealed semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 18
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 3
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 3
- 150000002367 halogens Chemical class 0.000 claims abstract description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- -1 bromine Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 230000035939 shock Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- RXFFQBYNCVPZGL-UHFFFAOYSA-N 1,2,3,4,5,5a,8,9-octahydropyrido[1,2-b]diazepine Chemical compound N1CCCCC2C=CCCN21 RXFFQBYNCVPZGL-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YZVPXDDDYJRYGS-UHFFFAOYSA-H [C+4].C([O-])([O-])=O.[Ca+2].C([O-])([O-])=O.C([O-])([O-])=O Chemical compound [C+4].C([O-])([O-])=O.[Ca+2].C([O-])([O-])=O.C([O-])([O-])=O YZVPXDDDYJRYGS-UHFFFAOYSA-H 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は耐熱衝撃性に優れた樹脂封止型半導体装置に関
するものであり、更に詳しくは急激な温度変化を受けて
も耐クラツク性に非常に優れたエポキシ樹脂組成物によ
って封止された半導体装置に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device with excellent thermal shock resistance, and more specifically, to a resin-encapsulated semiconductor device with excellent crack resistance even when subjected to rapid temperature changes. The present invention relates to a semiconductor device sealed with an epoxy resin composition having excellent properties.
最近の電気製品における軽薄短小化傾向から半導体装置
の実装密度を向上させるために半導体セットメーカーで
は従来のスルーホール実装から表面実装への移行が進ん
でいる。Due to the recent trend toward lighter, thinner, and shorter electrical products, semiconductor set manufacturers are shifting from conventional through-hole mounting to surface mounting in order to improve the packaging density of semiconductor devices.
表面実装での自動化ラインではリードの半田付は時に半
導体装置は急激な温度変化を受け、このために樹脂成形
部にクランクが生じたり、リード樹脂間の界面が劣化し
、この結果として耐湿性が低下するなどの問題が生じて
しまう。When soldering leads on an automated surface mounting line, the semiconductor device is sometimes subjected to rapid temperature changes, which can cause cranks in the resin molding, deteriorate the interface between the lead resins, and result in moisture resistance. This may cause problems such as a decrease in performance.
これらの問題を解決するために半田浸漬時の熱衝撃を緩
和する目的で熱可塑性オリゴマーの添加（特開昭６２−
１１５８４９号公報）や、各種シリコーン化合物の添加
（特開昭６２−１１５８５０号公報、６２−１１６６５
４号公報、６２−１２８１６２号公報）、更にはシリコ
ーン変性（特開昭６２−１３６８６０号公報）などの手
法で対処しているが、いずれも半田浸漬後成形部にクラ
ックが生じてしまい信頼性の優れた樹脂封止型半導体装
置が得られるまでには至らなかった。To solve these problems, thermoplastic oligomers are added to alleviate the thermal shock during solder immersion (Japanese Unexamined Patent Application Publication No. 62-119).
115849) and the addition of various silicone compounds (JP-A-62-115850, 62-11665).
4, 62-128162) and silicone modification (Japanese Patent Application Laid-open No. 62-136860), these methods all lead to cracks in the molded part after being dipped in solder, resulting in poor reliability. However, it has not been possible to obtain an excellent resin-sealed semiconductor device.
特にこれらの添加剤の添加については成形時の作業性が
悪化する問題が生じてしまい、樹脂自体の構造を変えて
特性を改善する方法が考えられてきた。In particular, the addition of these additives poses the problem of deteriorating workability during molding, and methods have been considered to improve the properties by changing the structure of the resin itself.
これらの樹脂自体の構造を変える方法も、反応工程の複
雑化等といろいろの欠点があり、未だ満足するものが得
られていない。These methods of changing the structure of the resin itself have various drawbacks, such as complicating the reaction process, and so far no satisfactory product has been obtained.
ところで、硬化剤としてシンクロペンタジエン・フェノ
リックポリマーを用いる方法としては特開昭６２−９６
５２１号公報、６２−１０４８３０号公報が、発表され
ているが、これらはいずれも用途目的を異にし製造方法
も異なる。特に特開昭６２−９６５２１号公報について
は積層板や、多層プリント板の製造に関するものであり
、最終組成物が、フェス状である。また特開昭６２−１
０４８３０号公報の方法についてはイミダゾール系の硬
化促進剤を使用しており、耐湿性が、大幅に低下する。By the way, a method using synchropentadiene phenolic polymer as a curing agent is disclosed in Japanese Patent Application Laid-Open No. 62-96.
No. 521 and No. 62-104830 have been published, but these have different purposes and manufacturing methods. In particular, JP-A-62-96521 relates to the production of laminates and multilayer printed boards, and the final composition is in the form of a face. Also, JP-A-62-1
The method disclosed in Japanese Patent No. 04830 uses an imidazole-based curing accelerator, which significantly reduces moisture resistance.
更に最終組成物に充填材が配合されておらず半導体封止
用樹脂組成物としての強度や熱膨張係数の特性を満足す
ることが出来ない。Furthermore, the final composition does not contain a filler and cannot satisfy the properties of strength and thermal expansion coefficient as a resin composition for semiconductor encapsulation.
本発明は従来の樹脂組成物の使用によって得ることの出
来なかった耐熱衝撃性に優れ、信頼性に優れた樹脂封止
半導体装置を得んとして研究した結果、エポキシ樹脂と
シンクロペンタジエン・フェノリックポリマーを硬化剤
として用い、更にトリフェニルホスフィン、又は１．８
−ジアザビンクロ（５、４、０） ウンデセンを単独
もしくは混合したものを必須成分とするエポキシ樹脂組
成物を使用することにより耐熱衝撃性に優れ、信頼性に
優れる樹脂封止型半導体装置が得られることを見いだし
本願発明を完成したものである。The present invention was developed using epoxy resin and synchropentadiene phenolic polymer. Used as a curing agent, and further triphenylphosphine, or 1.8
- By using an epoxy resin composition containing diazabinchro (5, 4, 0) undecene alone or as an essential component, a resin-sealed semiconductor device with excellent thermal shock resistance and reliability can be obtained. The present invention was completed by discovering the following.
本発明は、エポキシ樹脂、硬化剤として下記の一般式０
）で示されるシンクロペンタジエン・フェノリックポリ
マーをエポキシ樹脂に対して当量比（エポキシ基数／水
酸基数）が、０．５〜１．５となるような量及び硬化促
進剤としてトリフェニルホスフィン、又は１．８−ジア
ザビシクロ（５，４，０） ウンデセンを単独もしくは
１種以上部合したものを必須成分とするエポキシ樹脂組
成物により封止したことを特徴とする樹脂封止型半導体
装置に関するものである。The present invention uses the following general formula 0 as an epoxy resin and curing agent.
) in an amount such that the equivalent ratio (number of epoxy groups/number of hydroxyl groups) to the epoxy resin is 0.5 to 1.5, and triphenylphosphine as a curing accelerator, or 1. The present invention relates to a resin-sealed semiconductor device characterized in that it is encapsulated with an epoxy resin composition containing as an essential component 8-diazabicyclo(5,4,0) undecene alone or in combination with one or more types thereof.
一般式（１）
（式中のＲは水素原子、アルキル基、塩素、臭素等のハ
ロゲンなど、を表わす。またｎは０〜１５の整数を表わ
す、）
上記の一般式（１）で表されるシンクロペンタジエン・
フェノリックポリマーは分子中に可撓性構造を存する多
官能ポリマーであり、これを硬化剤とし、更に硬化促進
剤としてトリフェニルホスフィン、又は１．８−ジアザ
ビシクロ（５，４，０） ウンデセンを単独もしくは
混合したものと併用することにより、従来からは考えら
れなかったような、耐熱衝撃性を向上させることができ
、非常に信頼性に優れた樹脂封止型半導体装置を得るこ
とが出来る。General formula (1) (R in the formula represents a hydrogen atom, an alkyl group, a halogen such as chlorine, bromine, etc., and n represents an integer from 0 to 15) Synchropentadiene
A phenolic polymer is a multifunctional polymer that has a flexible structure in its molecules, and uses this as a curing agent and further uses triphenylphosphine or 1,8-diazabicyclo(5,4,0) undecene alone or as a curing accelerator. When used in combination with a mixture, thermal shock resistance can be improved in a way that was previously unimaginable, and a resin-sealed semiconductor device with extremely high reliability can be obtained.
本発明で用いるエポキシ樹脂とは、ビスフェノール型、
フェノールノボラック型、クレゾールノボラック型、複
素環型等のエポキシ樹脂であり、これらは単独で用いて
もよいが併用しても良い。The epoxy resin used in the present invention is bisphenol type,
Epoxy resins include phenol novolac type, cresol novolac type, and heterocyclic type, and these may be used alone or in combination.
本組成物におＣＳて用いる、硬化剤としてはシンクロペ
ンタジエン・フェノリックポリマーと他の硬化剤とを併
用″することは何等差し支えがない。As the curing agent used in the CS of this composition, there is no problem in using the synchropentadiene phenolic polymer and other curing agents in combination.
該シンクロペンタジエン・フェノリックポリマーと他の
硬化剤との併用の場合の使用量はこれを調節することに
よって、その特性を最大限に引き出すことが出来る。耐
熱衝撃性に対する効果を発揮するためには併用する従来
からの硬化剤、例えばノボラック樹脂硬化剤に対して重
量部で５０部以上、さらに好ましくは７５部以上の使用
が望ましい。又、エポキシ樹脂に対するシンクロペンタ
ジエン・フェノリックポリマーの配合量は当量比（エポ
キシ基数／水酸基数）で０．５〜１．５でありさらに好
ましくは０．８〜１．４、更に好ましくは１゜０〜１．
２が望ましい。ｎについては０〜１５、好ましくは０〜
５更に好ましくは２〜３が望ましい。By adjusting the amount of the synchropentadiene phenolic polymer used in combination with other curing agents, the properties can be maximized. In order to exhibit the effect on thermal shock resistance, it is desirable to use 50 parts or more, more preferably 75 parts or more by weight of the conventional curing agent used in combination, such as a novolak resin curing agent. Further, the amount of the synchropentadiene phenolic polymer to be blended with respect to the epoxy resin is an equivalent ratio (number of epoxy groups/number of hydroxyl groups) of 0.5 to 1.5, more preferably 0.8 to 1.4, and even more preferably 1°0. ~1.
2 is desirable. n is 0-15, preferably 0-15
5, more preferably 2 to 3.
シンクロペンタジエン・フェノリックポリマー硬化剤と
併用する硬化剤とは、フェノールノボラック類が、好適
であるが酸無水物、アミン類を挙げることが出来る。硬
化促進剤としてはトリフェニルホスフィン又は１．８−
ジアザビシクロ（５，４，０） ウンデセンを単独又
は混合系で使用する。The curing agent used in combination with the synchropentadiene phenolic polymer curing agent is preferably phenol novolacs, but may also include acid anhydrides and amines. As a curing accelerator, triphenylphosphine or 1.8-
Diazabicyclo(5,4,0) undecene is used alone or in a mixed system.
一般に硬化促進剤としては第３級アミン類、イミダゾー
ル類等も使用されているが、これらは電気特性が劣り、
高集積度化した電子部品の封止剤には不向きである。Generally, tertiary amines, imidazoles, etc. are also used as curing accelerators, but these have poor electrical properties and
It is not suitable as a sealant for highly integrated electronic components.
硬化促進剤として用いるトリフェニルホスフィン又は１
．８−ジアザビシクロ（５，４，０） ウンデセンは
、シンクロペンタジエン・フェノリックポリマーとの併
用により、電気特性が非常に優れたものが得られ、特に
半田浸漬後の耐湿性に優れる。これは熱衝撃に対してシ
ンクロペンタジエン・フェノリックポリマーの可撓性が
効果を発揮し、トリフェニルホスフィン又はｌ、８−ジ
アザビシクロ（５，４，０）ウンデセンによりリーク電
流等の発生が少なく耐湿性や電気特性が非常に向上する
。硬化促進剤としては特にトリフェニルホスフィシが良
好の結果を示し、より好ましい。Triphenylphosphine or 1 used as curing accelerator
．． When 8-diazabicyclo(5,4,0) undecene is used in combination with a synchropentadiene phenolic polymer, very excellent electrical properties can be obtained, particularly excellent moisture resistance after immersion in solder. The flexibility of synchropentadiene phenolic polymer is effective against thermal shock, and triphenylphosphine or l,8-diazabicyclo(5,4,0) undecene generates less leakage current and has excellent moisture resistance. Electrical properties are greatly improved. As a curing accelerator, triphenylphosphinyl shows particularly good results and is more preferable.
充填材については、シリカ、アルミナ、炭酸カルシウム
炭素繊維等の充填材全般を指し、カップリング剤につい
てはシラン系、チタネート系、アルミキレート系等のカ
ップリング剤全般を゛指す。Fillers refer to all fillers such as silica, alumina, calcium carbonate carbon fiber, etc., and coupling agents refer to all coupling agents such as silane-based, titanate-based, and aluminum chelate-based.
以上に示される原料をヘンシェルミキサーで混合し、コ
ニーダで混練した後、冷却粉砕してエポキシ樹脂組成物
とし、−該組成物成形機により樹脂封止型半導体装置を
成形する。The raw materials shown above are mixed in a Henschel mixer, kneaded in a co-kneader, cooled and pulverized to form an epoxy resin composition, and then molded into a resin-sealed semiconductor device using a molding machine.
また本発明で用いられる樹脂封止型半導体装置のＩＣに
ついてはバイポーラＩＣ：ＭＯ３ＩＣ等ＩＣ全般を指し
、樹脂封止型半導体装置の形状についてはスタンダード
ＤＩＰをはじめとしてＳＯＰ、ＺＩＰ、ＰＬＣＣ，フラ
ットパッケージ等のパッケージ形状全般に通用できる。Furthermore, the IC of the resin-sealed semiconductor device used in the present invention refers to ICs in general such as bipolar IC: MO3IC, and the shape of the resin-sealed semiconductor device includes standard DIP, SOP, ZIP, PLCC, flat package, etc. Can be used for all package shapes.
このように本発明りよる樹脂封止型半導体装置は急激な
温度変化を受けた後の耐湿性及び耐クラツク性に優れる
ものである。従って最近の表面実装における要求特性、
特に耐熱衝撃性に非常に優れ信顛性の高いものであるこ
とから本発明の産業的意味役割は非常に大きい。As described above, the resin-sealed semiconductor device according to the present invention has excellent moisture resistance and crack resistance after being subjected to rapid temperature changes. Therefore, the characteristics required in recent surface mounting,
In particular, since it has excellent thermal shock resistance and high reliability, the present invention has a very significant role in industry.
エポキシ樹脂、砿４乙剤、硬化促進剤及び他の原料を第
１表に従って配合し、ヘンシェルミキサーで混合し、コ
ニーダーで混練した後、冷却粉砕し、実施例１〜４及び
比較例１〜７のエポキシ樹脂組成物を得た。The epoxy resin, the hardening accelerator, and other raw materials were blended according to Table 1, mixed in a Henschel mixer, kneaded in a co-kneader, cooled, and ground. Examples 1 to 4 and Comparative Examples 1 to 7 An epoxy resin composition was obtained.
第１表の配合によって得られたエポキシ樹脂組成物を用
いてアルミ模擬素子を組み込んだモニターＩＣを成形温
度１７５℃、注入時間１５秒硬化時間９０秒でトランス
ファー成形し、１７５℃、８時間ボストキュアーし、樹
脂封止型半導体装置を得た。Using the epoxy resin composition obtained according to the formulation shown in Table 1, a monitor IC incorporating an aluminum simulated element was transfer molded at a molding temperature of 175°C with an injection time of 15 seconds and a curing time of 90 seconds, and then post-cured at 175°C for 8 hours. A resin-sealed semiconductor device was obtained.
得られた樹脂封止型半導体装置について成形物の表面硬
度、耐湿性及び耐クラツク性の評価を行った結果を第２
表に示す。The results of evaluating the surface hardness, moisture resistance, and crack resistance of the molded product for the obtained resin-sealed semiconductor device are summarized in the second section.
Shown in the table.
第２表に示すように、実施例は比較例に比べ各信鯨性に
優れ、特に半田浸漬後の耐湿性と耐ブラック性に優れて
いることがわかる。As shown in Table 2, it can be seen that the Examples are superior to the Comparative Examples in each of the anti-corrosion properties, particularly in the moisture resistance and black resistance after immersion in solder.
Claims (1)
ポリマーをエポキシ樹脂に対して当量比（エポキシ基数
／水酸基数）が０．５〜１．５となるような量、及び硬
化促進剤としてトリフェニルホスフィン又は１．８−ジ
アザビシクロ（５、４、０）ウンデセンを単独もしくは
混合したものを必須成分とするエポキシ樹脂組成物によ
り封止したことを特徴とする樹脂封止型半導体装置。 ▲数式、化学式、表等があります▼ （式中のＲは水素原子、アルキル基、塩素、臭素等のハ
ロゲンなどを表わす。またｎは０〜１５の整数を表わす
。）[Claims] Epoxy resin and curing agent include a synchropentadiene phenolic polymer represented by the following general formula (1), with an equivalent ratio (number of epoxy groups/number of hydroxyl groups) of 0.5 to 1.5 to the epoxy resin. It is characterized by being sealed with an epoxy resin composition containing as an essential component triphenylphosphine or 1,8-diazabicyclo(5,4,0)undecene alone or in combination as a curing accelerator. A resin-sealed semiconductor device. ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (R in the formula represents a hydrogen atom, an alkyl group, a halogen such as chlorine, bromine, etc. Also, n represents an integer from 0 to 15.)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26184387A JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26184387A JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01105562A true JPH01105562A (en) | 1989-04-24 |
| JPH0567650B2 JPH0567650B2 (en) | 1993-09-27 |
Family
ID=17367518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26184387A Granted JPH01105562A (en) | 1987-10-19 | 1987-10-19 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01105562A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03166220A (en) * | 1989-11-25 | 1991-07-18 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing semiconductor |
| JPH03278450A (en) * | 1990-03-27 | 1991-12-10 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
| JPH04207057A (en) * | 1990-11-30 | 1992-07-29 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
| JPH0597970A (en) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and semiconductor device |
| JPH05148410A (en) * | 1991-11-26 | 1993-06-15 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and semiconductor device |
| US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
| WO2006134865A1 (en) * | 2005-06-16 | 2006-12-21 | San-Apro Limited | Hardening accelerator for epoxy resin |
| KR200457970Y1 (en) * | 2008-10-01 | 2012-01-16 | 손성철 | Toothpick case |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
| JPS62201922A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
| JPH01101362A (en) * | 1987-10-14 | 1989-04-19 | Sanyo Kokusaku Pulp Co Ltd | Resin composition |
| JPH01104615A (en) * | 1987-10-16 | 1989-04-21 | Sanyo Kokusaku Pulp Co Ltd | Flame-retardant epoxy resin composition |
-
1987
- 1987-10-19 JP JP26184387A patent/JPH01105562A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62201922A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
| JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
| JPH01101362A (en) * | 1987-10-14 | 1989-04-19 | Sanyo Kokusaku Pulp Co Ltd | Resin composition |
| JPH01104615A (en) * | 1987-10-16 | 1989-04-21 | Sanyo Kokusaku Pulp Co Ltd | Flame-retardant epoxy resin composition |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03166220A (en) * | 1989-11-25 | 1991-07-18 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing semiconductor |
| JPH03278450A (en) * | 1990-03-27 | 1991-12-10 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
| JPH04207057A (en) * | 1990-11-30 | 1992-07-29 | Matsushita Electric Works Ltd | Resin-sealed semiconductor device |
| JPH0597970A (en) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and semiconductor device |
| JPH05148410A (en) * | 1991-11-26 | 1993-06-15 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and semiconductor device |
| US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
| WO2006134865A1 (en) * | 2005-06-16 | 2006-12-21 | San-Apro Limited | Hardening accelerator for epoxy resin |
| JPWO2006134865A1 (en) * | 2005-06-16 | 2009-01-08 | サンアプロ株式会社 | Curing accelerator for epoxy resin |
| KR200457970Y1 (en) * | 2008-10-01 | 2012-01-16 | 손성철 | Toothpick case |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567650B2 (en) | 1993-09-27 |
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