JPH0566737B2 - - Google Patents
Info
- Publication number
- JPH0566737B2 JPH0566737B2 JP26717784A JP26717784A JPH0566737B2 JP H0566737 B2 JPH0566737 B2 JP H0566737B2 JP 26717784 A JP26717784 A JP 26717784A JP 26717784 A JP26717784 A JP 26717784A JP H0566737 B2 JPH0566737 B2 JP H0566737B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- region
- equivalent
- layer
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000006870 function Effects 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26717784A JPS61144846A (ja) | 1984-12-18 | 1984-12-18 | 大規模集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26717784A JPS61144846A (ja) | 1984-12-18 | 1984-12-18 | 大規模集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144846A JPS61144846A (ja) | 1986-07-02 |
| JPH0566737B2 true JPH0566737B2 (ko) | 1993-09-22 |
Family
ID=17441173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26717784A Granted JPS61144846A (ja) | 1984-12-18 | 1984-12-18 | 大規模集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61144846A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204461A (ja) * | 1988-02-09 | 1989-08-17 | Matsushita Electron Corp | 半導体集積回路 |
| KR0131373B1 (ko) * | 1994-06-15 | 1998-04-15 | 김주용 | 반도체 소자의 데이터 출력버퍼 |
| JPH08330431A (ja) * | 1995-05-31 | 1996-12-13 | Nec Corp | 半導体集積回路 |
-
1984
- 1984-12-18 JP JP26717784A patent/JPS61144846A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61144846A (ja) | 1986-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3523762B2 (ja) | 半導体記憶装置 | |
| US6222213B1 (en) | Semiconductor integrated circuit device | |
| KR920003676B1 (ko) | 반도체 장치 | |
| JP3926011B2 (ja) | 半導体装置の設計方法 | |
| US20020153591A1 (en) | Semiconductor memory device | |
| JP3074003B2 (ja) | 半導体集積回路装置 | |
| JP3163039B2 (ja) | 静電気保護回路を備えた半導体装置 | |
| JP3115787B2 (ja) | ポリセル集積回路 | |
| US5892261A (en) | SRAM bitline pull-up MOSFET structure for internal circuit electro-static discharge immunity | |
| US5001487A (en) | Semiconductor integrated circuit device | |
| JPH0566737B2 (ko) | ||
| JPH09102551A (ja) | 半導体装置 | |
| JP3996735B2 (ja) | 半導体装置 | |
| KR19980063892A (ko) | 셀 베이스 반도체 장치 및 스탠다드 셀 | |
| JP2780896B2 (ja) | 半導体集積回路の製造方法 | |
| JPS6074647A (ja) | 半導体集積回路装置 | |
| EP0113828B1 (en) | Master slice semiconductor chip having a new multi-function fet cell | |
| JPS5856354A (ja) | マスタ−スライスｌｓｉ | |
| JP3010911B2 (ja) | 半導体装置 | |
| JP2596406B2 (ja) | 半導体集積回路 | |
| JPH08186176A (ja) | 半導体集積回路装置 | |
| JPS632152B2 (ko) | ||
| JPH053252A (ja) | 半導体集積回路装置 | |
| JP2001168209A (ja) | Ｃｍｏｓ集積回路及びその自動設計法 | |
| JPH11330434A (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |