JPH0564849B2 - - Google Patents
Info
- Publication number
- JPH0564849B2 JPH0564849B2 JP60091796A JP9179685A JPH0564849B2 JP H0564849 B2 JPH0564849 B2 JP H0564849B2 JP 60091796 A JP60091796 A JP 60091796A JP 9179685 A JP9179685 A JP 9179685A JP H0564849 B2 JPH0564849 B2 JP H0564849B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- crystal
- substrate
- temperature
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 35
- 238000001704 evaporation Methods 0.000 claims description 32
- 239000007791 liquid phase Substances 0.000 claims description 28
- 230000008020 evaporation Effects 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 description 25
- 229910052785 arsenic Inorganic materials 0.000 description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- 239000000463 material Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- -1 etc. for n-type Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9179685A JPS61251022A (ja) | 1985-04-27 | 1985-04-27 | 化合物半導体の液相エピタキシヤル成長法及び成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9179685A JPS61251022A (ja) | 1985-04-27 | 1985-04-27 | 化合物半導体の液相エピタキシヤル成長法及び成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61251022A JPS61251022A (ja) | 1986-11-08 |
JPH0564849B2 true JPH0564849B2 (US07922777-20110412-C00004.png) | 1993-09-16 |
Family
ID=14036573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9179685A Granted JPS61251022A (ja) | 1985-04-27 | 1985-04-27 | 化合物半導体の液相エピタキシヤル成長法及び成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61251022A (US07922777-20110412-C00004.png) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5637601B2 (ja) * | 2011-03-02 | 2014-12-10 | 日本碍子株式会社 | 窒化物単結晶の育成装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4877765A (US07922777-20110412-C00004.png) * | 1972-01-18 | 1973-10-19 | ||
JPS4880275A (US07922777-20110412-C00004.png) * | 1972-01-28 | 1973-10-27 | ||
JPS51142499A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Crystal growing method |
JPS53125761A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Manufacture for binary compound semiconductor thin film |
JPS541675A (en) * | 1977-06-06 | 1979-01-08 | Kubota Ltd | Damping force tester for braking device |
JPS5552672U (US07922777-20110412-C00004.png) * | 1978-09-30 | 1980-04-08 | ||
JPS60112692A (ja) * | 1983-11-22 | 1985-06-19 | Matsushita Electric Ind Co Ltd | 分子線エピタキシアル成長法 |
JPS60167314A (ja) * | 1984-02-10 | 1985-08-30 | Hitachi Ltd | 分子線エピタキシヤル装置 |
-
1985
- 1985-04-27 JP JP9179685A patent/JPS61251022A/ja active Granted
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4877765A (US07922777-20110412-C00004.png) * | 1972-01-18 | 1973-10-19 | ||
JPS4880275A (US07922777-20110412-C00004.png) * | 1972-01-28 | 1973-10-27 | ||
JPS51142499A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Crystal growing method |
JPS53125761A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Manufacture for binary compound semiconductor thin film |
JPS541675A (en) * | 1977-06-06 | 1979-01-08 | Kubota Ltd | Damping force tester for braking device |
JPS5552672U (US07922777-20110412-C00004.png) * | 1978-09-30 | 1980-04-08 | ||
JPS60112692A (ja) * | 1983-11-22 | 1985-06-19 | Matsushita Electric Ind Co Ltd | 分子線エピタキシアル成長法 |
JPS60167314A (ja) * | 1984-02-10 | 1985-08-30 | Hitachi Ltd | 分子線エピタキシヤル装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS61251022A (ja) | 1986-11-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |