JPH0563947B2 - - Google Patents

Info

Publication number
JPH0563947B2
JPH0563947B2 JP58057552A JP5755283A JPH0563947B2 JP H0563947 B2 JPH0563947 B2 JP H0563947B2 JP 58057552 A JP58057552 A JP 58057552A JP 5755283 A JP5755283 A JP 5755283A JP H0563947 B2 JPH0563947 B2 JP H0563947B2
Authority
JP
Japan
Prior art keywords
tantalum
gate
oxide layer
aluminum
target made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58057552A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59182572A (ja
Inventor
Koji Nomura
Kuni Ogawa
Atsushi Abe
Koji Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58057552A priority Critical patent/JPS59182572A/ja
Priority to EP84901397A priority patent/EP0139764B1/en
Priority to US06/678,547 priority patent/US4602192A/en
Priority to PCT/JP1984/000145 priority patent/WO1984003992A1/ja
Priority to DE8484901397T priority patent/DE3480243D1/de
Publication of JPS59182572A publication Critical patent/JPS59182572A/ja
Publication of JPH0563947B2 publication Critical patent/JPH0563947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP58057552A 1983-03-31 1983-03-31 薄膜トランジスタとその製造方法 Granted JPS59182572A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58057552A JPS59182572A (ja) 1983-03-31 1983-03-31 薄膜トランジスタとその製造方法
EP84901397A EP0139764B1 (en) 1983-03-31 1984-03-29 Method of manufacturing thin-film integrated devices
US06/678,547 US4602192A (en) 1983-03-31 1984-03-29 Thin film integrated device
PCT/JP1984/000145 WO1984003992A1 (en) 1983-03-31 1984-03-29 Thin-film integrated device
DE8484901397T DE3480243D1 (en) 1983-03-31 1984-03-29 Method of manufacturing thin-film integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58057552A JPS59182572A (ja) 1983-03-31 1983-03-31 薄膜トランジスタとその製造方法

Publications (2)

Publication Number Publication Date
JPS59182572A JPS59182572A (ja) 1984-10-17
JPH0563947B2 true JPH0563947B2 (https=) 1993-09-13

Family

ID=13058963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58057552A Granted JPS59182572A (ja) 1983-03-31 1983-03-31 薄膜トランジスタとその製造方法

Country Status (1)

Country Link
JP (1) JPS59182572A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01286432A (ja) * 1988-05-13 1989-11-17 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜の欠陥の検出方法
JP2506961B2 (ja) * 1988-07-25 1996-06-12 松下電器産業株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS59182572A (ja) 1984-10-17

Similar Documents

Publication Publication Date Title
US7339187B2 (en) Transistor structures
US7189992B2 (en) Transistor structures having a transparent channel
US4602192A (en) Thin film integrated device
US7759724B2 (en) Memory cells having gate structure with multiple gates and multiple materials between the gates
KR101023491B1 (ko) 트랜지스터 구조 및 그 제조 방법
JPH0563947B2 (https=)
FI91575C (fi) Diodi, jossa on sekaoksidieristin
US10482957B2 (en) Resistive RAM memory cell
JPH061835B2 (ja) 薄膜トランジスタ
KR20060106035A (ko) 저항변화 기억소자용 박막 구조물 및 그 제조 방법
JPH0628317B2 (ja) 薄膜トランジスタの製造法
KR102728072B1 (ko) 다층의 오보닉계 상전이 물질 및 이를 포함하는 하이퍼 전계효과 트랜지스터
JPS5999480A (ja) 表示器
JPS6167964A (ja) 薄膜トランジスタ
KR20050054591A (ko) 비티에스 또는 비티지 물질로 이루어진 고유전체막을구비하는 반도체 소자의 커패시터 및 그 제조방법
US6479857B1 (en) Capacitor having a tantalum lower electrode and method of forming the same
KR100245302B1 (ko) 평판형 커패시터의 안티퓨즈 구조
JPH0234821A (ja) 薄膜トランジスタ
JPS63216378A (ja) 薄膜トランジスタ
Sedgwick et al. A field effect controlled storage display device using polycrystalline silicon film
CN117613091A (zh) 一种提升场效应晶体管表面势的结构及制备方法
JPS6262077B2 (https=)
JPWO2021252934A5 (https=)
JPH0377670B2 (https=)
JPH0212883A (ja) 非線形抵抗素子