JPH056340B2 - - Google Patents

Info

Publication number
JPH056340B2
JPH056340B2 JP58187391A JP18739183A JPH056340B2 JP H056340 B2 JPH056340 B2 JP H056340B2 JP 58187391 A JP58187391 A JP 58187391A JP 18739183 A JP18739183 A JP 18739183A JP H056340 B2 JPH056340 B2 JP H056340B2
Authority
JP
Japan
Prior art keywords
deflection
electron beam
exposed
height
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58187391A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6079722A (ja
Inventor
Teruaki Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP18739183A priority Critical patent/JPS6079722A/ja
Publication of JPS6079722A publication Critical patent/JPS6079722A/ja
Publication of JPH056340B2 publication Critical patent/JPH056340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
JP18739183A 1983-10-06 1983-10-06 電子線露光方法 Granted JPS6079722A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18739183A JPS6079722A (ja) 1983-10-06 1983-10-06 電子線露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18739183A JPS6079722A (ja) 1983-10-06 1983-10-06 電子線露光方法

Publications (2)

Publication Number Publication Date
JPS6079722A JPS6079722A (ja) 1985-05-07
JPH056340B2 true JPH056340B2 (zh) 1993-01-26

Family

ID=16205200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18739183A Granted JPS6079722A (ja) 1983-10-06 1983-10-06 電子線露光方法

Country Status (1)

Country Link
JP (1) JPS6079722A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2339960B (en) * 1998-07-16 2001-01-17 Advantest Corp Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial surface unevenness of the specimen
JP2000091225A (ja) 1998-07-16 2000-03-31 Advantest Corp 荷電粒子ビ―ム露光装置及び露光方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760205A (en) * 1980-09-30 1982-04-12 Jeol Ltd Exposure be electron beam
JPS58119642A (ja) * 1981-12-31 1983-07-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電子線自動焦点装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57140734U (zh) * 1981-02-27 1982-09-03

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760205A (en) * 1980-09-30 1982-04-12 Jeol Ltd Exposure be electron beam
JPS58119642A (ja) * 1981-12-31 1983-07-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電子線自動焦点装置

Also Published As

Publication number Publication date
JPS6079722A (ja) 1985-05-07

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