JPH0562470B2 - - Google Patents

Info

Publication number
JPH0562470B2
JPH0562470B2 JP58088564A JP8856483A JPH0562470B2 JP H0562470 B2 JPH0562470 B2 JP H0562470B2 JP 58088564 A JP58088564 A JP 58088564A JP 8856483 A JP8856483 A JP 8856483A JP H0562470 B2 JPH0562470 B2 JP H0562470B2
Authority
JP
Japan
Prior art keywords
substrate
type diffusion
diffusion layer
transfer gate
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58088564A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59214256A (ja
Inventor
Masayuki Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58088564A priority Critical patent/JPS59214256A/ja
Publication of JPS59214256A publication Critical patent/JPS59214256A/ja
Publication of JPH0562470B2 publication Critical patent/JPH0562470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58088564A 1983-05-20 1983-05-20 固体撮像装置 Granted JPS59214256A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58088564A JPS59214256A (ja) 1983-05-20 1983-05-20 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58088564A JPS59214256A (ja) 1983-05-20 1983-05-20 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59214256A JPS59214256A (ja) 1984-12-04
JPH0562470B2 true JPH0562470B2 (enExample) 1993-09-08

Family

ID=13946358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58088564A Granted JPS59214256A (ja) 1983-05-20 1983-05-20 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59214256A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412582A (en) * 1977-06-29 1979-01-30 Hitachi Ltd Semiconductor device
JPS54124480U (enExample) * 1978-02-20 1979-08-31

Also Published As

Publication number Publication date
JPS59214256A (ja) 1984-12-04

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