JPH0558660B2 - - Google Patents
Info
- Publication number
- JPH0558660B2 JPH0558660B2 JP14047689A JP14047689A JPH0558660B2 JP H0558660 B2 JPH0558660 B2 JP H0558660B2 JP 14047689 A JP14047689 A JP 14047689A JP 14047689 A JP14047689 A JP 14047689A JP H0558660 B2 JPH0558660 B2 JP H0558660B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- conductor wiring
- ring
- pressurizing body
- pressurizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 description 15
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83859—Localised curing of parts of the layer connector
Description
【発明の詳細な説明】
産業上の利用分野
本発明は各種電子機器に利用される半導体の実
装装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor mounting device used in various electronic devices.
従来の技術
従来の技術を第２図ａ，ｂとともに説明する。
まず第２図ａに示すようにセラミツク、ガラス、
ガラスエポキシ等よりなる配線基板１の導体配線
２を有す面に絶縁性の樹脂５を塗布する。導体配
線２はCr−Au、Al、Cu、ito等であり、樹脂５
は熱硬化型又は紫外線硬化型のエポキシ、シリコ
ン、アクリル等である。次に第２図ｂに示すよう
に半導体素子３の電極４と導体配線２とを一致さ
せ、半導体素子３を加圧し、配線基板１に押し当
てる。電極４はAl、Al、Cu等である。この時、
導体配線２上の樹脂５は周囲に押し出され、半導
体素子３の電極４を導体配線２は電気的に接触す
る。次に半導体素子３を加圧体６により加圧した
状態で上部外方により紫外線９を照射することに
より、半導体素子３周縁の樹脂５を硬化させ、仮
固定する。更に半導体素子３を加圧しながら加熱
することにより、樹脂５全体を硬化させ、この時
半導体素子３の電極４と導体配線２は樹脂５の接
着力により電気的接続がなされ、同時に半導体素
子３を配線基板１に固着することができる。Prior Art The conventional technology will be explained with reference to FIGS. 2a and 2b.
First, as shown in Figure 2a, ceramic, glass,
An insulating resin 5 is applied to a surface of a wiring board 1 made of glass epoxy or the like having conductor wiring 2. The conductor wiring 2 is made of Cr-Au, Al, Cu, ito, etc., and the resin 5
are thermosetting or ultraviolet curing epoxy, silicone, acrylic, etc. Next, as shown in FIG. 2b, the electrodes 4 of the semiconductor element 3 and the conductor wiring 2 are aligned, and the semiconductor element 3 is pressed against the wiring board 1 by applying pressure. The electrode 4 is made of Al, Al, Cu, etc. At this time,
The resin 5 on the conductor wiring 2 is pushed out to the periphery, and the conductor wiring 2 comes into electrical contact with the electrode 4 of the semiconductor element 3. Next, while the semiconductor element 3 is pressurized by the pressurizing body 6, ultraviolet rays 9 are irradiated from the upper part outward to harden the resin 5 around the semiconductor element 3 and temporarily fix the semiconductor element 3. Furthermore, by heating the semiconductor element 3 while applying pressure, the entire resin 5 is cured, and at this time, the electrode 4 of the semiconductor element 3 and the conductor wiring 2 are electrically connected by the adhesive force of the resin 5, and at the same time, the semiconductor element 3 is cured. It can be fixed to the wiring board 1.
発明が解決しようとする課題
以上のように従来の技術では、半導体素子３の
電極４を配線基板１の導体配線２に直接接触させ
る方法であるため、多端子、狭ピツチの半導体素
子３の実装に有利な方法であるが、半導体素子３
が加圧体６に対し傾きを生じた時半導体素子３は
不均一に加圧され、そのひずみにより接続の信頼
性が低下すると云う問題があつた。Problems to be Solved by the Invention As described above, in the conventional technology, the electrodes 4 of the semiconductor element 3 are brought into direct contact with the conductor wiring 2 of the wiring board 1, so the mounting of the semiconductor element 3 with multiple terminals and narrow pitches is difficult. This is an advantageous method for semiconductor device 3.
When the semiconductor element 3 is tilted with respect to the pressurizing body 6, the semiconductor element 3 is pressed unevenly, and the strain causes a problem in that the reliability of the connection is reduced.
課題を解決するための手段
上記問題点を解決するために本発明は、加圧部
を加圧体をＯリングを介して押圧体で押圧する構
成としたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention has a configuration in which the pressurizing section presses a pressurizing body with a pressurizing body via an O-ring.
作 用
上記構成によれば、弾性体であるＯリングの圧
縮ひずみによつて加圧体で半導体素子を均一に加
圧させることができるので、接続の信頼性の高い
ものとなる。Effects According to the above configuration, the semiconductor element can be uniformly pressurized by the pressurizing body due to the compressive strain of the O-ring, which is an elastic body, so that the connection becomes highly reliable.
実施例
以下、本発明の一実施例を第１図ａ，ｂととも
に説明する。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1a and 1b.
まず第１図ａに示すように、セラミツク、ガラ
ス、エポキシ等によりなる配線基板１１の半導体
素子１３を固着する部分にエポキシ、シリコン、
アクリル等よりなる絶縁性樹脂１５を塗布する。
なお配線基板１１上には導体配線１２が設けられ
ている。この導体配線１２はCr−Au、Al、Ito等
によりなる。次に第１図ｂに示すように半導体素
子１３のAl、Au、Cu等よりなる突起状の電極１
４と導体配線１２を一致させ、加圧体１６により
加圧する。この時加圧体１６はその押圧体１７と
の間にＯリング１８を介在させておりＯリング１
８の弾性によつて半導体素子１３の傾きを吸収
し、平行な状態で加圧体１６で半導体素子１３を
加圧している。なお、加圧体１６はガラス、サフ
アイア等の透明体で形成する。またＯリング１８
はシリコン、フツ素ゴム、CR等の弾性体よりな
る。加圧により導体配線１２上の樹脂１５は周囲
に押し出され、電極１４と導体配線１２が当接
し、この状態で加圧体１６を通して紫外線１９を
照射し、これによつて半導体素子１３の周縁部の
樹脂１５を硬化させ仮固定する。更に半導体素子
１３を加圧しながら加熱することによつて半導体
素子１３の電極１４と導体配線１２の電気的接続
と半導体素子１３の機械的保持が完了される。 First, as shown in FIG.
An insulating resin 15 made of acrylic or the like is applied.
Note that conductor wiring 12 is provided on the wiring board 11. The conductor wiring 12 is made of Cr-Au, Al, Ito, or the like. Next, as shown in FIG. 1b, protruding electrodes 1 made of Al, Au, Cu, etc. of the semiconductor element 13
4 and the conductor wiring 12 and pressurized by the pressurizing body 16. At this time, the O-ring 18 is interposed between the pressing body 16 and the pressing body 17, and the O-ring 1
The elasticity of the semiconductor element 13 absorbs the tilt of the semiconductor element 13, and the pressure member 16 presses the semiconductor element 13 in a parallel state. Note that the pressurizing body 16 is made of a transparent material such as glass or sapphire. Also O-ring 18
is made of an elastic material such as silicone, fluorocarbon rubber, or CR. Due to the pressure, the resin 15 on the conductor wiring 12 is pushed out to the periphery, and the electrode 14 and the conductor wiring 12 come into contact with each other. The resin 15 is cured and temporarily fixed. Further, by heating the semiconductor element 13 while applying pressure, electrical connection between the electrode 14 of the semiconductor element 13 and the conductor wiring 12 and mechanical holding of the semiconductor element 13 are completed.
なお、加圧体１６にFe、Al、Cu等よりなるリ
ング２０を設けることにより、配線基板１１によ
り反射された紫外線１９がＯリング１８を劣下さ
せ、傾き吸収能力が低下することを防いでいる。 In addition, by providing the ring 20 made of Fe, Al, Cu, etc. on the pressurizing body 16, it is possible to prevent the ultraviolet rays 19 reflected by the wiring board 11 from degrading the O-ring 18 and reducing the tilt absorption ability. There is.
発明の効果 本発明の効果を以下に示す。Effect of the invention The effects of the present invention are shown below.
(1) 半導体素子を均一に加圧することにより、半
導体素子に与えるひずみをなくすることができ
るとともに、導体配線との接続の信頼性の高い
ものとすることができる。(1) By uniformly applying pressure to the semiconductor element, it is possible to eliminate strain on the semiconductor element, and the reliability of the connection with the conductor wiring can be made high.
(2) 紫外線の照射と加圧が簡易な構造で実現で
き、量産性に優れたものとなる。(2) Ultraviolet irradiation and pressurization can be achieved with a simple structure, making it highly suitable for mass production.
第１図ａ，ｂは本発明の一実施例の半導体実装
装置で用いる配線基板の断面図と加圧体部の断面
図、第２図ａ，ｂはともに従来の技術を示す断面
図である。
１１……配線基板、１２……導体配線、１３…
…半導体素子、１４……半導体素子の電極、１５
……絶縁性の樹脂、１６……加圧体、１７……加
圧体の押圧体、１８……Ｏリング、１９……紫外
線、２０……金属リング。
1A and 1B are cross-sectional views of a wiring board and a pressurizing body used in a semiconductor packaging device according to an embodiment of the present invention, and FIGS. 2A and 2B are cross-sectional views showing a conventional technique. . 11... Wiring board, 12... Conductor wiring, 13...
...Semiconductor element, 14... Electrode of semiconductor element, 15
... Insulating resin, 16 ... Pressure body, 17 ... Pressure body of pressure body, 18 ... O ring, 19 ... Ultraviolet light, 20 ... Metal ring.
Claims (1)
照面となつた加圧体と、この加圧体をＯリングを
介して半導体素子に加圧する押圧体とを備えた半
導体実装装置。1. A semiconductor mounting device comprising: a pressurizing body having one end surface serving as a pressurizing surface and the other end surface serving as a surface for transmitting ultraviolet rays; and a pressurizing body that presses the pressurizing body against a semiconductor element via an O-ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14047689A JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14047689A JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH034546A JPH034546A (en) | 1991-01-10 |
| JPH0558660B2 true JPH0558660B2 (en) | 1993-08-27 |
Family
ID=15269495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14047689A Granted JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH034546A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2547895B2 (en) * | 1990-03-20 | 1996-10-23 | シャープ株式会社 | Semiconductor device mounting method |
| JP2662131B2 (en) * | 1991-12-26 | 1997-10-08 | 松下電器産業株式会社 | Bonding equipment |
| WO2000011731A1 (en) * | 1998-08-21 | 2000-03-02 | Eveready Battery Company, Inc. | Battery having printed label |
| JP3603890B2 (en) | 2002-03-06 | 2004-12-22 | セイコーエプソン株式会社 | Electronic device, method of manufacturing the same, and electronic apparatus |
| JP4902229B2 (en) * | 2006-03-07 | 2012-03-21 | ソニーケミカル＆インフォメーションデバイス株式会社 | Implementation method |
| JP2010178667A (en) * | 2009-02-05 | 2010-08-19 | Nissin Frozen Foods Co Ltd | Frozen seasoning liquid pack, frozen noodle containing the same, and method for producing the frozen noodle |
-
1989
- 1989-06-01 JP JP14047689A patent/JPH034546A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH034546A (en) | 1991-01-10 |
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