JPH034546A - Semiconductor mounting device - Google Patents
Semiconductor mounting deviceInfo
- Publication number
- JPH034546A JPH034546A JP14047689A JP14047689A JPH034546A JP H034546 A JPH034546 A JP H034546A JP 14047689 A JP14047689 A JP 14047689A JP 14047689 A JP14047689 A JP 14047689A JP H034546 A JPH034546 A JP H034546A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor element
- board
- pressed
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 239000011347 resin Substances 0.000 abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 11
- 238000003825 pressing Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 15
- 239000004593 Epoxy Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83859—Localised curing of parts of the layer connector
Landscapes
- Wire Bonding (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は各種電子機器に利用される半導体の実装装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor mounting device used in various electronic devices.
従来の技術
従来の技術を第2図(IL) (b)とともに説明する
。Prior Art The conventional technology will be explained with reference to FIG. 2 (IL) (b).
まず第2図(&)に示すようにセラミック、ガラス。First, as shown in Figure 2 (&), ceramic and glass.
ガラスエポキシ等よシなる配線基板1の導体配線2を有
する面に絶縁性の樹脂5を塗布する。導体配線2はcr
−ムU、ム(1、au 、 ito等であり、樹脂6は
熱硬化型又は紫外、庫硬化型のエポキシ。An insulating resin 5 is applied to the surface of a wiring board 1 made of glass epoxy or the like having conductor wiring 2. Conductor wiring 2 is cr
-mu U, mu (1, au, ito, etc.), and the resin 6 is a thermosetting type or an ultraviolet or warehouse curing type epoxy.
シリコン、アクリル等である。次に第2図(b)に示す
ように半導体素子3の電゛匝4と導体配線2とを一致さ
せ、半導体素子3を加圧し、配線基板1に押し当てる。Silicone, acrylic, etc. Next, as shown in FIG. 2(b), the cap 4 of the semiconductor element 3 and the conductor wiring 2 are aligned, and the semiconductor element 3 is pressed against the wiring board 1 by applying pressure.
電極4はムl、ムu、Cu等である。The electrode 4 is made of MuI, Mu, Cu, or the like.
この時、導体配線2上の、R脂6は周囲に押し出され、
半導体素子3の電極4と導体配線2は電気的に接触する
。次に半導体素子3を加圧体6によシ加圧した状態で上
部外方よシ紫外meを照射することに、よシ、半導体素
子3周縁の樹脂6を硬化させ、仮固定する。更に半導体
素子3を加圧しながら加熱することによ)、樹脂5全体
を硬化させ、この時半導体素子3の電極4と導体配線2
は樹脂6の接着力により電気的接続がなされ、・同時に
半導体素子3を配線基板1に固着することができる。At this time, the R fat 6 on the conductor wiring 2 is pushed out to the surroundings,
The electrode 4 of the semiconductor element 3 and the conductor wiring 2 are in electrical contact. Next, while the semiconductor element 3 is pressed by the pressurizing body 6, the upper part is irradiated with ultraviolet light from the outside to harden the resin 6 around the semiconductor element 3 and temporarily fix it. Furthermore, by heating the semiconductor element 3 while applying pressure), the entire resin 5 is cured, and at this time, the electrode 4 of the semiconductor element 3 and the conductor wiring 2 are cured.
An electrical connection is made by the adhesive force of the resin 6, and at the same time, the semiconductor element 3 can be fixed to the wiring board 1.
発明が解決しようとする課題
以上のように従来の技術では、半導体素子3の電極4を
配線基板1の導体配線2に直接接触させる方法であるた
め、多端子、狭ピッチの半導体素子3の実装に有利な方
法であるが、半導体素子3が加圧体6に対し傾きを生じ
た時半導体素子3は不均一に加圧され、そのひずみにょ
シ接読の信頼性が低下すると云う問題があった。Problems to be Solved by the Invention As described above, in the conventional technology, the electrodes 4 of the semiconductor element 3 are brought into direct contact with the conductor wiring 2 of the wiring board 1, so it is difficult to mount the semiconductor element 3 with multiple terminals and a narrow pitch. However, there is a problem in that when the semiconductor element 3 is tilted with respect to the pressurizing body 6, the semiconductor element 3 is pressed unevenly, and the reliability of close reading is reduced due to the distortion. Ta.
課題を解決するための手段
上記間厘点を解決するために本発明は、加圧部を加圧体
を0リングを介して押圧体で押圧する溝成としだもので
ある。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention employs a groove structure in which the pressing part is pressed by a pressing body through an O-ring.
作用
上記溝成によれば、弾性体であるOリングの圧縮ひずみ
によって加圧体で半導体素子を均一に加圧させることが
できるので、接、読の信頼性の高いものとなる。Effect: According to the above-mentioned groove structure, the compression strain of the O-ring, which is an elastic body, allows the pressurizing body to uniformly press the semiconductor element, resulting in highly reliable contact and reading.
実施e2り
以下、本発明の一実施例を第1図(&) 、(b)とと
もに説明する。Embodiment e2 Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1(&) and (b).
まず第1図(2L)に示すように、セラミック、ガラス
、エポキシ等よりなる配線基板11の半導体素子13を
固着する部分にエポキシ、シリコン。First, as shown in FIG. 1 (2L), epoxy or silicon is applied to the portion of the wiring board 11 made of ceramic, glass, epoxy, etc. to which the semiconductor element 13 is fixed.
アクリlし等よシなる絶縁性樹脂15を塗布する。An insulating resin 15 made of acrylic or the like is applied.
なお配線基板11上には導体配線12が設けられている
。この導体配線12ばcr−ムU、ムl。Note that conductor wiring 12 is provided on the wiring board 11. This conductor wiring 12Bcr-M U, Ml.
Ito等よりなる。次に第1図(b)に示すように半導
体素子13のムe、ムu、Cu 等よりなる突起状の電
極14と導体配線12を一致させ、加圧体16によシ加
圧する。この時加圧体16ばその押圧体17との間にO
リング18を介在させており0リング18の弾性によっ
て半導体j子13の1頂きを吸収し、平行な状態で加圧
体16で半導体素子13を加圧している。なお、加圧体
16はガラス、サファイア等の透明体で形成する。また
0リング18はシリコン、フッ素ゴム、GR等の弾性体
よりなる。加圧によシ導体配虜12上の樹脂15は周囲
に押し出され、電極14と導体配線12が当接し、この
状態で加圧体16を通して紫外線19を照射し、これに
よって半導体素子13の周碌部の支脂16を硬化させ仮
固定する。更に半導体素子13を加圧しながら加熱する
ことによっで半導体素子13の電極14と導体配線12
の電気的接続と半導体素子13の機械的保持が完了され
る。It consists of Ito et al. Next, as shown in FIG. 1(b), the protruding electrodes 14 made of Mu, Mu, Cu, etc. of the semiconductor element 13 are aligned with the conductor wiring 12, and pressure is applied by the pressurizing body 16. At this time, there is an O between the pressing body 16 and the pressing body 17.
A ring 18 is interposed, and the elasticity of the O-ring 18 absorbs one peak of the semiconductor element 13, and the pressure body 16 presses the semiconductor element 13 in a parallel state. Note that the pressurizing body 16 is formed of a transparent material such as glass or sapphire. Further, the O-ring 18 is made of an elastic material such as silicone, fluororubber, or GR. Due to the pressurization, the resin 15 on the conductor captive 12 is pushed out to the periphery, the electrode 14 and the conductor wiring 12 come into contact with each other, and in this state, ultraviolet rays 19 are irradiated through the pressurizing body 16, thereby exposing the peripheral portion of the semiconductor element 13. The supporting fat 16 is hardened and temporarily fixed. Furthermore, by heating the semiconductor element 13 while pressurizing it, the electrodes 14 of the semiconductor element 13 and the conductor wiring 12 are heated.
The electrical connection and mechanical holding of the semiconductor element 13 are completed.
なお、加圧体16にFe 、ムl 、 Cu 等より
なるリング20を設けることによシ、配線基板11によ
り反射された紫外1線19が0リング18を劣下させ、
頑き吸収能力が低下することを防いでいる。By providing the ring 20 made of Fe, Mul, Cu, etc. on the pressurizing body 16, the ultraviolet 1 rays 19 reflected by the wiring board 11 deteriorate the O ring 18,
It works hard to prevent the absorption capacity from decreasing.
発明の効果 本発明の効果を以下に示す。Effect of the invention The effects of the present invention are shown below.
(1)半導体素子を均一に加圧することにより、半導体
素子に与えるひずみをなくすることができるとともに、
導体配置sとの接続の信頼性の高いものとすることがで
きる。(1) By uniformly applying pressure to the semiconductor element, it is possible to eliminate strain on the semiconductor element, and
The connection with the conductor arrangement s can be made highly reliable.
+2) g外虜の照射と加圧が簡易な、溝道で実現で
き、量産性に優れたものとなる。+2) Irradiation and pressurization of the external prisoner can be easily achieved with a groove path, making it excellent for mass production.
第1図(2L) 、(b)は本発明の一実施例の半導体
装置で用いる配線基板の断面図と加圧体部の断面図、第
21B (a) 、(b)はともに従来の技術を示す断
面図である。
11・・・・・・配7腺基板、12・・・・・・導体配
線、13・・・・・半導体素子、14・・・・・・半導
体素子の電極、16・・・・・・絶縁性の樹脂、18・
・・・・・加圧体、17・・・・・・加圧体の押圧体、
18・・・・・・0リング、19・・・・・・紫外1線
、20・・・・・・金属リング。
MI図FIGS. 1(2L) and (b) are cross-sectional views of a wiring board and a pressurizing body used in a semiconductor device according to an embodiment of the present invention, and FIGS. 21B (a) and (b) are both conventional techniques. FIG. 11... Circuit board, 12... Conductor wiring, 13... Semiconductor element, 14... Electrode of semiconductor element, 16... Insulating resin, 18.
...pressure body, 17...pressure body of pressurization body,
18...0 ring, 19...ultraviolet 1 ray, 20...metal ring. MI diagram
Claims (1)
た加圧体と、この加圧体をOリングを介して半導体素子
に加圧する押圧体とを備えた半導体実装装置。A semiconductor mounting device comprising: a pressure member having one end surface serving as a pressure surface and the other end surface serving as a surface for transmitting ultraviolet rays; and a press member that presses the pressure member against a semiconductor element via an O-ring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047689A JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047689A JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH034546A true JPH034546A (en) | 1991-01-10 |
JPH0558660B2 JPH0558660B2 (en) | 1993-08-27 |
Family
ID=15269495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14047689A Granted JPH034546A (en) | 1989-06-01 | 1989-06-01 | Semiconductor mounting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH034546A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296063A (en) * | 1990-03-20 | 1994-03-22 | Sharp Kabushiki Kaisha | Method for mounting a semiconductor device |
US5316610A (en) * | 1991-12-26 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Bonding apparatus |
WO2000011731A1 (en) * | 1998-08-21 | 2000-03-02 | Eveready Battery Company, Inc. | Battery having printed label |
US7186584B2 (en) | 2002-03-06 | 2007-03-06 | Seiko Epson Corporation | Integrated circuit chip, electronic device and method of manufacturing the same, and electronic instrument |
EP1993124A1 (en) * | 2006-03-07 | 2008-11-19 | Sony Chemical & Information Device Corporation | Mounting method, board with electrical component, and electrical apparatus |
JP2010178667A (en) * | 2009-02-05 | 2010-08-19 | Nissin Frozen Foods Co Ltd | Frozen seasoning liquid pack, frozen noodle containing the same, and method for producing the frozen noodle |
-
1989
- 1989-06-01 JP JP14047689A patent/JPH034546A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296063A (en) * | 1990-03-20 | 1994-03-22 | Sharp Kabushiki Kaisha | Method for mounting a semiconductor device |
US5316610A (en) * | 1991-12-26 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Bonding apparatus |
WO2000011731A1 (en) * | 1998-08-21 | 2000-03-02 | Eveready Battery Company, Inc. | Battery having printed label |
US7186584B2 (en) | 2002-03-06 | 2007-03-06 | Seiko Epson Corporation | Integrated circuit chip, electronic device and method of manufacturing the same, and electronic instrument |
EP1993124A1 (en) * | 2006-03-07 | 2008-11-19 | Sony Chemical & Information Device Corporation | Mounting method, board with electrical component, and electrical apparatus |
EP1993124A4 (en) * | 2006-03-07 | 2009-04-01 | Sony Chem & Inf Device Corp | Mounting method, board with electrical component, and electrical apparatus |
JP2010178667A (en) * | 2009-02-05 | 2010-08-19 | Nissin Frozen Foods Co Ltd | Frozen seasoning liquid pack, frozen noodle containing the same, and method for producing the frozen noodle |
Also Published As
Publication number | Publication date |
---|---|
JPH0558660B2 (en) | 1993-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2090071B (en) | Bonding with a conductive adhesive | |
JPH036828A (en) | Semiconductor device | |
JPH034546A (en) | Semiconductor mounting device | |
JP2903697B2 (en) | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
JPH02122531A (en) | Device for mounting electronic component | |
JPH0777227B2 (en) | Method for manufacturing semiconductor device | |
JPH07302973A (en) | Manufacture of electronic component | |
JPS62281360A (en) | Manufacture of semiconductor device | |
JPH02155257A (en) | Mounting device for semiconductor | |
JPH0232559A (en) | Electronic component mounting body | |
JPH01160029A (en) | Semiconductor device | |
JPH0519306B2 (en) | ||
JPH034542A (en) | Manufacture of semiconductor device | |
JP2847954B2 (en) | Method for manufacturing semiconductor device | |
JP3031134B2 (en) | How to connect electrodes | |
JP2712757B2 (en) | Bonding tool | |
JPH0482240A (en) | Manufacture of semiconductor device | |
JPS63227029A (en) | Manufacture of semiconductor device | |
JPS63240036A (en) | Manufacture of semiconductor device | |
JP2523641B2 (en) | Semiconductor device | |
JPS62252946A (en) | Manufacture of semiconductor device | |
JPH10163799A (en) | Surface acoustic wave device and its production | |
JPH0429339A (en) | Semiconductor device | |
JPH04254343A (en) | Packaging method of semiconductor device | |
JPH0642502B2 (en) | Method and device for manufacturing semiconductor device |