JPH0558625A - Oxide superconductor thin film having insulating layer and its production - Google Patents
Oxide superconductor thin film having insulating layer and its productionInfo
- Publication number
- JPH0558625A JPH0558625A JP3242801A JP24280191A JPH0558625A JP H0558625 A JPH0558625 A JP H0558625A JP 3242801 A JP3242801 A JP 3242801A JP 24280191 A JP24280191 A JP 24280191A JP H0558625 A JPH0558625 A JP H0558625A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- thin film
- superconducting
- superconducting thin
- oxide superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 239000002887 superconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 239000012212 insulator Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化物超電導薄膜に関
する。より詳細には、表面の一部に絶縁体層を有する酸
化物超電導薄膜に関する。FIELD OF THE INVENTION The present invention relates to an oxide superconducting thin film. More specifically, it relates to an oxide superconducting thin film having an insulating layer on a part of its surface.
【０００２】[0002]
【従来の技術】酸化物超電導体を各種の超電導素子等に
使用するためには、薄膜化し、さらに絶縁体層、半導体
層と積層することが必要となる。例えば、トンネル接合
型のジョセフソン素子を酸化物超電導体を使用して実現
する場合には、一対の酸化物超電導体層の間に極めて薄
い絶縁体層を挟む構成を実現しなければならない。ま
た、超電導電界効果型素子は、超電導チャネルを流れる
超電導電流を超電導チャネル上に絶縁層を介して配置さ
れたゲート電極に印加する電圧で制御する構成であり、
酸化物超電導体を超電導チャネルに使用する場合には、
酸化物超電導薄膜上に絶縁体層を形成しなければならな
い。2. Description of the Related Art In order to use an oxide superconductor in various superconducting elements, it is necessary to make it thin and further laminate it with an insulator layer and a semiconductor layer. For example, when realizing a tunnel junction type Josephson device using an oxide superconductor, it is necessary to realize a structure in which an extremely thin insulator layer is sandwiched between a pair of oxide superconductor layers. Further, the superconducting field effect element has a configuration in which a superconducting current flowing through the superconducting channel is controlled by a voltage applied to a gate electrode arranged via an insulating layer on the superconducting channel,
When using oxide superconductors in superconducting channels,
An insulator layer must be formed on the oxide superconducting thin film.
【０００３】上記のような、超電導素子、超電導装置を
作製する場合、酸化物超電導薄膜上の所定の位置に絶縁
体層等を形成しなければならない。一般に、薄膜上の一
部に他の薄膜を積層する加工を行う場合には、フォトレ
ジストが使用される。前述の酸化物超電導薄膜上に絶縁
体層を形成するには、酸化物超電導薄膜表面の絶縁体層
を形成しない部分をフォトレジストで被覆し、それをマ
スクとして絶縁体層を成長させる。When manufacturing the superconducting element and the superconducting device as described above, it is necessary to form an insulator layer or the like at a predetermined position on the oxide superconducting thin film. Generally, a photoresist is used when a process of laminating another thin film on a part of the thin film is performed. In order to form the insulator layer on the oxide superconducting thin film described above, a portion of the surface of the oxide superconducting thin film on which the insulator layer is not formed is covered with a photoresist, and the insulator layer is grown using the photoresist as a mask.
【０００４】[0004]
【発明が解決しようとする課題】上記の加工では、最終
的には、フォトレジストを除去するが、その際、フォト
レジストが残留して酸化物超電導薄膜の表面を汚染した
り、フォトレジスト剥離剤と酸化物超電導薄膜を構成す
る酸化物超電導体が反応して酸化物超電導体が超電導性
を失ったりすることがある。また、このように酸化物超
電導薄膜の表面に問題が生じると、この酸化物超電導薄
膜上に他の薄膜を積層しても所定の効果が得られず、特
に、超電導素子を作製するには不利になる。また、酸化
物超電導薄膜に連続して他の薄膜を成膜し、積層膜を形
成する処理は困難である。In the above processing, the photoresist is finally removed, but at that time, the photoresist remains and contaminates the surface of the oxide superconducting thin film, or the photoresist stripping agent is used. And the oxide superconductor forming the oxide superconducting thin film may react with each other to cause the oxide superconductor to lose superconductivity. In addition, when a problem occurs on the surface of the oxide superconducting thin film as described above, a predetermined effect cannot be obtained even if another thin film is laminated on the oxide superconducting thin film, which is particularly disadvantageous for producing a superconducting element. become. Further, it is difficult to form a laminated film by continuously forming another thin film on the oxide superconducting thin film.
【０００５】そこで本発明の目的は、上記従来技術の問
題点を解決した酸化物超電導薄膜およびその作製方法を
提供することにある。Therefore, an object of the present invention is to provide an oxide superconducting thin film and a method for producing the same, which solve the above-mentioned problems of the prior art.
【０００６】[0006]
【課題を解決するための手段】本発明に従うと、表面の
一部に絶縁体層を有し、他の部分が酸化物超電導体で構
成されている酸化物超電導薄膜において、前記絶縁体層
が前記酸化物超電導薄膜と一体に形成され、酸化物超電
導体と等しい構成元素が有し、結晶中の酸素が少なくて
超電導性を示さない非超電導酸化物で構成されているこ
とを特徴とする酸化物超電導薄膜が提供される。According to the present invention, in an oxide superconducting thin film having an insulator layer on a part of the surface and another part made of an oxide superconductor, the insulator layer is Oxidation characterized in that it is formed integrally with the oxide superconducting thin film, has the same constituent elements as the oxide superconductor, and is composed of a non-superconducting oxide that does not show superconductivity due to a small amount of oxygen in the crystal. A superconducting thin film is provided.
【０００７】また、本発明においては、酸化物超電導薄
膜に該酸化物超電導薄膜の表面の一部をなす絶縁体層を
含む層を積層する方法において、前記酸化物超電導薄膜
を圧力１×10-9Torr以下の高真空中で熱処理し、該酸化
物超電導薄膜表面の酸化物超電導体結晶中の酸素を減少
させて非超電導酸化物に変え、絶縁体層とする部分を被
覆した後、前記非超電導酸化物に酸素を導入して酸化物
超電導体に変える工程を含むことを特徴とする方法が提
供される。Further, in the present invention, in the method of laminating a layer including an insulator layer forming a part of the surface of the oxide superconducting thin film on the oxide superconducting thin film, the oxide superconducting thin film is pressured at 1 × 10 − After heat treatment in a high vacuum of 9 Torr or less, oxygen in the oxide superconducting crystal on the surface of the oxide superconducting thin film is reduced to a non-superconducting oxide, and the non-superconducting oxide layer is covered with A method is provided which comprises the step of introducing oxygen into the superconducting oxide to convert it into an oxide superconductor.
【０００８】[0008]
【作用】本発明の酸化物超電導薄膜は、酸化物超電導体
の結晶中の酸素を除去して形成された非超電導酸化物で
構成された絶縁体層を表面の一部に有する。本発明の酸
化物超電導薄膜の非超電導酸化物は、酸化物超電導薄膜
が十分な超電導性を示す温度で絶縁体特性を示すもので
ある。本発明の酸化物超電導薄膜の絶縁体層は、酸化物
超電導薄膜を構成する酸化物超電導体の一部が非超電導
酸化物に変化したものである。従って、絶縁体層は、酸
化物超電導薄膜と一体に形成され、酸化物超電導体と構
成元素が等しい。そのため、本発明の酸化物超電導薄膜
では、絶縁体層により周囲の酸化物超電導体が汚染され
たり、特性が劣化するようなことがない。The oxide superconducting thin film of the present invention has an insulating layer composed of a non-superconducting oxide formed by removing oxygen in the crystal of the oxide superconductor on a part of the surface. The non-superconducting oxide of the oxide superconducting thin film of the present invention exhibits insulating properties at a temperature at which the oxide superconducting thin film exhibits sufficient superconductivity. In the insulator layer of the oxide superconducting thin film of the present invention, a part of the oxide superconductor forming the oxide superconducting thin film is changed to a non-superconducting oxide. Therefore, the insulator layer is formed integrally with the oxide superconducting thin film, and has the same constituent elements as those of the oxide superconductor. Therefore, in the oxide superconducting thin film of the present invention, the surrounding oxide superconductor is not contaminated by the insulator layer and the characteristics are not deteriorated.
【０００９】また、本発明では、上記のような酸化物超
電導薄膜の表面の一部を絶縁体層にするのに、酸化物超
電導薄膜を圧力１×10-9Torr以下の高真空中で熱処理
し、表面の酸化物超電導体結晶中の酸素を減少させて非
超電導酸化物に変え、絶縁体層とする部分を被覆した
後、この非超電導酸化物に酸素を導入して再び酸化物超
電導体に変える方法が採られる。即ち、本発明の方法で
は、酸化物超電導薄膜全体の表面を一度非超電導酸化物
にして絶縁体層とする部分にのみ常電導体等の薄膜を積
層し、その後露出している部分に酸素を導入して再び酸
化物超電導体とする。従って、酸化物超電導体の部分に
は表面に異なる物質が被覆されないので、上記の表面汚
染等が発生しない。In the present invention, the oxide superconducting thin film is heat-treated in a high vacuum at a pressure of 1 × 10 -9 Torr or less in order to form a part of the surface of the oxide superconducting thin film as an insulating layer. Then, the oxygen in the oxide superconductor crystal on the surface is reduced and changed to a non-superconducting oxide, and after covering the part to be the insulator layer, oxygen is introduced into this non-superconducting oxide and the oxide superconductor is again introduced. The method of changing to. That is, in the method of the present invention, the surface of the entire oxide superconducting thin film is once made into a non-superconducting oxide, and a thin film such as a normal conductor is laminated only on a portion to be an insulator layer, and then oxygen is applied to the exposed portion. It is introduced and made into an oxide superconductor again. Therefore, the surface of the oxide superconductor is not covered with a different substance, so that the above surface contamination does not occur.
【００１０】また、本発明の方法では、酸化物超電導薄
膜上に絶縁体層を形成した後、連続して常電導体による
電極、配線層等を形成することが可能である。従って、
本発明の方法で、本発明の酸化物超電導薄膜を作製する
ことにより、酸化物超電導薄膜上に連続して複数の薄膜
を積層することができる。これにより、各種超電導素
子、超電導装置、超電導集積回路等の作製が容易にな
る。Further, according to the method of the present invention, after forming an insulator layer on the oxide superconducting thin film, it is possible to continuously form electrodes, wiring layers and the like by a normal conductor. Therefore,
By producing the oxide superconducting thin film of the present invention by the method of the present invention, a plurality of thin films can be continuously laminated on the oxide superconducting thin film. This facilitates the production of various superconducting elements, superconducting devices, superconducting integrated circuits, and the like.
【００１１】本発明の方法で、酸化物超電導薄膜の表面
を非超電導酸化物に変える熱処理は、圧力１×10-9Torr
以下の高真空中で、結晶中の酸素が最も動く温度に加熱
する処理である。結晶中の酸素が最も動く温度は、例え
ば、Ｙ1Ba2Cu3Ｏ7-X系酸化物超電導体では、350 〜 400
℃である。この温度よりも高い温度に加熱すると、酸化
物超電導体が分解し、後に酸素を導入する処理を行って
も超電導性を回復しないことがある。また、これより低
い温度では、酸化物超電導体結晶中の酸素があまり動か
ないので処理に時間がかかる。さらに、上記の方法で
は、処理時間により形成する非超電導酸化物層の厚さを
調整することが容易である。According to the method of the present invention, the heat treatment for converting the surface of the oxide superconducting thin film into a non-superconducting oxide is performed at a pressure of 1 × 10 −9 Torr.
In the following high vacuum, it is a process of heating to a temperature at which oxygen in the crystal moves most. The temperature at which oxygen in the crystal moves most is, for example, 350 to 400 in Y 1 Ba 2 Cu 3 O 7-X oxide superconductor.
℃. When heated to a temperature higher than this temperature, the oxide superconductor is decomposed, and the superconductivity may not be recovered even if a treatment of introducing oxygen later is performed. Further, at a temperature lower than this temperature, the oxygen in the oxide superconductor crystal does not move so much that the treatment takes time. Further, in the above method, it is easy to adjust the thickness of the non-superconducting oxide layer to be formed depending on the treatment time.
【００１２】一方、本発明の方法で、酸化物超電導薄膜
表面に形成された非超電導酸化物を再度酸化物超電導体
にするには、逆に酸素雰囲気中で酸化物超電導薄膜を上
記の結晶中の酸素が最も動く温度に加熱する熱処理を行
う。また、上記の非超電導酸化物上に酸化物超電導薄膜
を積層する処理を行うと、同時にこの非超電導酸化物は
酸化物超電導体に戻る。これは、酸化物超電導薄膜の成
膜環境では、上記の非超電導酸化物中に酸素が取り込ま
れるためであり、実質的に酸素雰囲気中で熱処理を行っ
たことになるからである。On the other hand, in order to convert the non-superconducting oxide formed on the surface of the oxide superconducting thin film into the oxide superconductor again by the method of the present invention, conversely, the oxide superconducting thin film is formed in the above crystal in an oxygen atmosphere. The heat treatment of heating to the temperature at which oxygen most moves is performed. In addition, when the oxide superconducting thin film is laminated on the non-superconducting oxide, the non-superconducting oxide returns to the oxide superconductor at the same time. This is because in the film forming environment of the oxide superconducting thin film, oxygen is taken into the above-mentioned non-superconducting oxide, which means that the heat treatment is substantially performed in the oxygen atmosphere.
【００１３】本発明は、任意の酸化物超電導体に適用で
きるが、Ｙ1Ba2Cu3Ｏ7-X系酸化物超電導体は安定的に高
品質の結晶性のよい薄膜が得られるので好ましい。ま
た、Bi2Sr2Ca2Cu3Ｏx 系酸化物超電導体は、特にその超
電導臨界温度Ｔc が高いので好ましい。The present invention can be applied to any oxide superconductor, but the Y 1 Ba 2 Cu 3 O 7 -X oxide superconductor is preferred because it can stably obtain a high quality thin film with good crystallinity. .. Further, the Bi 2 Sr 2 Ca 2 Cu 3 O x oxide superconductor is particularly preferable because its superconducting critical temperature Tc is high.
【００１４】以下、本発明を実施例によりさらに詳しく
説明するが、以下の開示は本発明の単なる実施例に過ぎ
ず、本発明の技術的範囲をなんら制限するものではな
い。Hereinafter, the present invention will be described in more detail by way of examples, but the following disclosure is merely examples of the present invention and does not limit the technical scope of the present invention.
【００１５】[0015]
【実施例】本発明の方法で作製した本発明の酸化物超電
導薄膜を使用して超電導素子を作製した。図１を参照し
て、その工程を説明する。まず、図１(a)に示すようMg
Ｏ基板１上にＹ1Ba2Cu3Ｏ7-X酸化物超電導薄膜２を成膜
する。成膜方法としては、各種のスパッタリング法、Ｍ
ＢＥ法、真空蒸着法、ＣＶＤ法等任意の方法が使用可能
である。スパッタリング法で成膜を行う際の主な成膜条
件を以下に示す。 基板温度 700℃ スパッタリングガス Ar 90 ％ Ｏ2 10 ％ 圧力 ５×10-2Torr 膜厚 400nmEXAMPLE A superconducting device was produced using the oxide superconducting thin film of the present invention produced by the method of the present invention. The process will be described with reference to FIG. First, as shown in Fig. 1 (a), Mg
A Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin film 2 is formed on an O substrate 1. As a film forming method, various sputtering methods, M
Any method such as a BE method, a vacuum vapor deposition method, a CVD method can be used. The main film forming conditions for forming a film by the sputtering method are shown below. Substrate temperature 700 ℃ Sputtering gas Ar 90% O 2 10% Pressure 5 × 10 -2 Torr Film thickness 400nm
【００１６】次に、このＹ1Ba2Cu3Ｏ7-X酸化物超電導薄
膜２を圧力１×10-9Torr以下の高真空中で375℃に加熱
し、10分間その温度を維持し、図１(b)に示すようＹ1Ba
2Cu3Ｏ7-X酸化物超電導薄膜２の表面の厚さ約15nmの部
分をＹ1Ba2Cu3Ｏ7-y（ｘ＜ｙ＜７）非超電導酸化物層20
に変える。この非超電導酸化物層20上の３箇所に図１
(c)に示すようフォトレジスト膜41、42および43を形成
する。続いて、真空蒸着法により、Au層を成長させた後
フォトレジスト膜41、42および43を除去し、図１(d)に
示すようAu電極５および６を形成する。この際、フォト
レジストの現像剤、剥離剤に触れても非超電導酸化物層
20はほとんど劣化しない。Next, the Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin film 2 was heated to 375 ° C. in a high vacuum with a pressure of 1 × 10 -9 Torr or less and maintained at that temperature for 10 minutes. As shown in Fig. 1 (b), Y 1 Ba
The surface of the 2 Cu 3 O 7-X oxide superconducting thin film 2 having a thickness of about 15 nm is covered with a Y 1 Ba 2 Cu 3 O 7-y (x <y <7) non-superconducting oxide layer 20.
Change to. At the three locations on this non-superconducting oxide layer 20, FIG.
Photoresist films 41, 42 and 43 are formed as shown in (c). Then, the Au layer is grown by a vacuum evaporation method, and then the photoresist films 41, 42 and 43 are removed, and Au electrodes 5 and 6 are formed as shown in FIG. 1D. At this time, the non-superconducting oxide layer does not come into contact with the photoresist developer or release agent.
20 hardly deteriorates.
【００１７】最後に再びＹ1Ba2Cu3Ｏ7-X酸化物超電導薄
膜を積層し、図１(e)に示すよう超電導電極31、32およ
び33を形成する。Ｙ1Ba2Cu3Ｏ7-X酸化物超電導薄膜が成
長するときに、非超電導酸化物層20の超電導電極31、32
および33の下側部分は酸素を取り込み酸化物超電導体と
なる。従って、Au電極５および６の下側にのみ非超電導
酸化物層21および22が形成される。Finally, Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin films are laminated again to form superconducting electrodes 31, 32 and 33 as shown in FIG. 1 (e). When the Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin film is grown, the superconducting electrodes 31, 32 of the non-superconducting oxide layer 20 are grown.
The lower part of 33 and 33 takes in oxygen and becomes an oxide superconductor. Therefore, the non-superconducting oxide layers 21 and 22 are formed only under the Au electrodes 5 and 6.
【００１８】上記のように作製した超電導素子は、超電
導電極31および32間の酸化物超電導薄膜２を流れる超電
導電流をAu電極５に印加する電圧で制御し、超電導電極
32および33間の酸化物超電導薄膜２を流れる超電導電流
をAu電極６に印加する電圧で制御する超電導電界効果型
素子である。In the superconducting device manufactured as described above, the superconducting current flowing through the oxide superconducting thin film 2 between the superconducting electrodes 31 and 32 is controlled by the voltage applied to the Au electrode 5,
This is a superconducting field effect element in which the superconducting current flowing through the oxide superconducting thin film 2 between 32 and 33 is controlled by the voltage applied to the Au electrode 6.
【００１９】[0019]
【発明の効果】以上説明したように、本発明に従えば、
表面に絶縁体層を有する酸化物超電導薄膜およびその作
製方法が提供される。本発明の酸化物超電導薄膜は、連
続して他の材料の薄膜を積層することが容易であり、超
電導素子に使用することが有利である。As described above, according to the present invention,
Provided are an oxide superconducting thin film having an insulator layer on its surface, and a method for producing the same. The oxide superconducting thin film of the present invention makes it easy to continuously stack thin films of other materials, and is advantageously used for a superconducting device.
【図１】本発明の方法で作製した本発明の酸化物超電導
薄膜を使用して超電導素子を作製する工程を説明する図
である。FIG. 1 is a diagram illustrating a step of producing a superconducting device using the oxide superconducting thin film of the present invention produced by the method of the present invention.
１ MgＯ基板 ２ 酸化物超電導薄膜 ５、６ Au電極 20、21、22 非超電導酸化物層 41、42、43 フォトレジスト 1 MgO substrate 2 Oxide superconducting thin film 5, 6 Au electrode 20, 21, 22 Non-superconducting oxide layer 41, 42, 43 Photoresist
Claims (2)
が酸化物超電導体で構成されている酸化物超電導薄膜に
おいて、前記絶縁体層が前記酸化物超電導薄膜と一体に
形成され、酸化物超電導体と等しい構成元素が有し、結
晶中の酸素が少なくて超電導性を示さない非超電導酸化
物で構成されていることを特徴とする酸化物超電導薄
膜。1. An oxide superconducting thin film having an insulating layer on a part of the surface and an oxide superconductor on the other part, wherein the insulating layer is formed integrally with the oxide superconducting thin film. And a non-superconducting oxide having the same constituent elements as those of the oxide superconductor and having no oxygen in the crystal and exhibiting no superconductivity.
の表面の一部をなす絶縁体層を含む層を積層する方法に
おいて、前記酸化物超電導薄膜を圧力１×10-9Torr以下
の高真空中で熱処理し、該酸化物超電導薄膜表面の酸化
物超電導体結晶中の酸素を減少させて非超電導酸化物に
変え、絶縁体層とする部分を被覆した後、前記非超電導
酸化物に酸素を導入して酸化物超電導体に変える工程を
含むことを特徴とする方法。2. A method of laminating a layer including an insulator layer forming a part of the surface of the oxide superconducting thin film on the oxide superconducting thin film, wherein the oxide superconducting thin film is high at a pressure of 1 × 10 −9 Torr or less. After heat treatment in vacuum, oxygen in the oxide superconducting crystal on the surface of the oxide superconducting thin film is reduced to a non-superconducting oxide, and the non-superconducting oxide is covered with oxygen. A method of introducing an oxide superconductor into the oxide superconductor.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3242801A JPH0558625A (en) | 1991-08-28 | 1991-08-28 | Oxide superconductor thin film having insulating layer and its production |
| EP92402354A EP0534811B1 (en) | 1991-08-28 | 1992-08-27 | Method of manufacturing superconducting thin film formed of oxide superconductor having non superconducting region in it, and method of manufacturing superconducting device utilizing the superconducting thin film |
| CA002077047A CA2077047C (en) | 1991-08-28 | 1992-08-27 | Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region in it, method for manufacturing superconducting device utilizing the superconducting thin film and superconducting thin film manufactured thereby |
| DE69210523T DE69210523T2 (en) | 1991-08-28 | 1992-08-27 | Process for the production of superconducting layers of superconducting oxide in which non-superconducting regions occur and process for the production of a component which contains such layers |
| US08/198,362 US5462919A (en) | 1991-08-28 | 1994-02-18 | Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region and device utilizing the superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3242801A JPH0558625A (en) | 1991-08-28 | 1991-08-28 | Oxide superconductor thin film having insulating layer and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0558625A true JPH0558625A (en) | 1993-03-09 |
Family
ID=17094491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3242801A Pending JPH0558625A (en) | 1991-08-28 | 1991-08-28 | Oxide superconductor thin film having insulating layer and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0558625A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420639A (en) * | 1987-07-15 | 1989-01-24 | Sharp Kk | Manufacture of superconductor |
| JPS6451680A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Oxide ceramics laminated layer structure and its manufacture |
| JPH01106479A (en) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | Superconductive material structure |
| JPH01140622A (en) * | 1987-11-26 | 1989-06-01 | Taiyo Yuden Co Ltd | Device having superconducting film |
| JPH02311398A (en) * | 1989-05-29 | 1990-12-26 | Sumitomo Electric Ind Ltd | Production of oxide superconducting film |
-
1991
- 1991-08-28 JP JP3242801A patent/JPH0558625A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420639A (en) * | 1987-07-15 | 1989-01-24 | Sharp Kk | Manufacture of superconductor |
| JPS6451680A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Oxide ceramics laminated layer structure and its manufacture |
| JPH01106479A (en) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | Superconductive material structure |
| JPH01140622A (en) * | 1987-11-26 | 1989-06-01 | Taiyo Yuden Co Ltd | Device having superconducting film |
| JPH02311398A (en) * | 1989-05-29 | 1990-12-26 | Sumitomo Electric Ind Ltd | Production of oxide superconducting film |
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