JPH02311398A - Production of oxide superconducting film - Google Patents
Production of oxide superconducting filmInfo
- Publication number
- JPH02311398A JPH02311398A JP1135231A JP13523189A JPH02311398A JP H02311398 A JPH02311398 A JP H02311398A JP 1135231 A JP1135231 A JP 1135231A JP 13523189 A JP13523189 A JP 13523189A JP H02311398 A JPH02311398 A JP H02311398A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide superconducting
- film
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 238000000608 laser ablation Methods 0.000 claims abstract description 5
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910000856 hastalloy Inorganic materials 0.000 claims description 2
- 229910001293 incoloy Inorganic materials 0.000 claims description 2
- 229910001026 inconel Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- -1 ittria Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明は、酸化物超電導膜の製造方法に関するもので
、特に、たとえば超電導コイル、超電導ケーブル等に使
用される酸化物超電導線に含まれる酸化物超電導膜の製
造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a method for producing an oxide superconducting film, and in particular, it relates to a method for producing an oxide superconducting film, and in particular, it relates to a method for producing an oxide superconducting film. The present invention relates to a method for manufacturing a superconducting film.
［従来の技術Ｊ
酸化物超電導物質を導体祠料として使用可能とするため
の一手段として、酸化物超電導膜を基板上に形成した状
態とすることが行なわれている。[Prior Art J] As a means for making an oxide superconducting material usable as a conductor abrasive material, an oxide superconducting film is formed on a substrate.
基板として、可撓性を有する長尺状のものを用いれば、
酸化物超電導線が得られる。If a flexible long substrate is used,
An oxide superconducting wire is obtained.
このような基板上への酸化物超電導膜の形成には種々の
方法が提案されているが、それらの方法のうち、酸化物
超電導膜に対して臨界電流密度の高い値が得られている
のは、気相法によるもので、この気相法には、スパッタ
法、レーザアブレーション法、蒸着法、ＣＶＤ法、熱分
解法、等の方法がある。Various methods have been proposed for forming oxide superconducting films on such substrates, but among these methods, only one method has been able to obtain a high value of critical current density for oxide superconducting films. is based on a vapor phase method, and the vapor phase method includes methods such as sputtering method, laser ablation method, vapor deposition method, CVD method, and thermal decomposition method.
特に、酸化物超電導物質の格子定数と近い値を有する単
結晶基板上において、高い臨界電流密度を持つ酸化物超
電導膜の製造に成功している。言換えると、多結晶基板
上で形成した酸化物超電導膜の臨界電流密度は、単結晶
基板上での酸化物超電導膜に比べ、一般に劣っている。In particular, we have succeeded in producing oxide superconducting films with high critical current densities on single-crystal substrates with lattice constants close to those of oxide superconducting materials. In other words, the critical current density of an oxide superconducting film formed on a polycrystalline substrate is generally inferior to that of an oxide superconducting film formed on a single crystal substrate.
たとえば、Ｙ−Ｂａ−Ｃｕ−０系酸化物超電導膜の臨界
電流密度は、液体窒素中において、ＭｇＯ単結晶基板上
では、１０６／ｃｍ２であるのに対し、ＹＳｚ多結晶基
板上では、１０３Ａ／Ｃｍ２であった。For example, the critical current density of a Y-Ba-Cu-0 based oxide superconducting film is 106/cm2 on an MgO single crystal substrate in liquid nitrogen, whereas it is 103 A/cm2 on a YSz polycrystalline substrate. It was Cm2.
［発明が解決しようとする課題］
セラミックスからなる基板の場合、現在、単結晶では、
可撓性を有するものが知られていない。[Problems to be solved by the invention] Currently, in the case of substrates made of ceramics, single crystals have
There is no known material that is flexible.
このような可撓性は、超電導コイルや超電導ケーブル等
に使用される酸化物超電導線にとって、必須の条件であ
る。多結晶基板には、可撓性を有するものが既に多く知
られており、可撓性を得る目的からすれば、多結晶基板
を用いることが望ましい。Such flexibility is an essential condition for oxide superconducting wires used in superconducting coils, superconducting cables, and the like. Many polycrystalline substrates having flexibility are already known, and from the viewpoint of obtaining flexibility, it is desirable to use a polycrystalline substrate.
たとえば、Ｙ−Ｂａ−Ｃｕ−０系酸化物超電導物質から
なる膜を、ＹＳＺ（イツトリア安定化ジルコニア）多結
晶基板上に形成したとき、そのような酸化物超電導膜は
、Ｃ軸が基板に対して垂直に配向しており、また、超電
導特性を示す臨界温度が８０に以上を示している。しか
しながら、膜のモフォロジーに関しては、析出粒子間の
融合度が大きくなく、ＭｇＯ単結晶基板上に形成した膜
と比べ、緻密性および平滑性が劣るという課題があった
。このような緻密性および平滑性が劣ることは、超電導
線材にとって重要な臨界電流密度の向上を妨げる。For example, when a film made of Y-Ba-Cu-0-based oxide superconducting material is formed on a YSZ (yttria stabilized zirconia) polycrystalline substrate, the C-axis of such oxide superconducting film is In addition, the critical temperature exhibiting superconducting properties is 80°C or higher. However, regarding the morphology of the film, there was a problem that the degree of fusion between precipitated particles was not large, and the density and smoothness were inferior compared to a film formed on an MgO single crystal substrate. Such poor density and smoothness hinders improvement in critical current density, which is important for superconducting wires.
そこで、この発明は、高い臨界電流密度を与えることが
できる酸化物超電導膜の製造方法を提供することを目的
とするものである。Therefore, an object of the present invention is to provide a method for manufacturing an oxide superconducting film that can provide a high critical current density.
［課題を解決するための手段］
この発明は、酸化物超電導膜を基板上において製造する
方法に向けられるものであって、上述した技術的課題を
解決するため、まず、基板上に、酸化物超電導物質と同
じ元素を含む酸化物物質からなる平滑性を有する第１層
を形成し、次いで、この第１層を熱処理して酸化物物質
に結晶配向性を与え、さらに、続いて、結晶配向性が与
えられた第１層上に、この第１層を形成するのとは異な
る成膜条件または成膜法で前記酸化物超電導物質からな
る第２層を形成する、各ステップを備えることを特徴と
するものである。[Means for Solving the Problems] The present invention is directed to a method of manufacturing an oxide superconducting film on a substrate. A smooth first layer made of an oxide material containing the same element as the superconducting material is formed, and then this first layer is heat-treated to impart crystal orientation to the oxide material. forming a second layer made of the oxide superconducting material on the first layer imparted with properties under different film forming conditions or a film forming method from that for forming the first layer. This is a characteristic feature.
上述した第１層および第２層を形成するため、たとえば
、第１層の形成には、スパッタ法が用いられ、また、第
２層の形成には、スパッタ法、レーザアブレーション法
、蒸着法、ＣＶＤ法または熱分解法が用いられる。In order to form the above-mentioned first layer and second layer, for example, the first layer is formed using a sputtering method, and the second layer is formed using a sputtering method, a laser ablation method, a vapor deposition method, A CVD method or a thermal decomposition method is used.
また、酸化物超電導線を得るためには、可撓性を有する
長尺体の形態をなす基板が用いられる。Further, in order to obtain an oxide superconducting wire, a substrate in the form of a flexible elongated body is used.
そのような基板として、多結晶体からなるものを有利に
用いることができる。また、可撓性を有する基板は、よ
り具体的には、安定化ジルコニア、アルミナ、イツトリ
ア、シリカもしくはチタニアからなるセラミックス、ま
たは、白金、銅、銀、アルミニウム、ニッケル、ハステ
ロイ、インコネル、インコロイもしくはステンレス鋼か
らなる金属材料によって構成されたものがある。As such a substrate, one made of polycrystalline material can be advantageously used. Further, the flexible substrate is more specifically made of ceramics made of stabilized zirconia, alumina, ittria, silica, or titania, or platinum, copper, silver, aluminum, nickel, Hastelloy, Inconel, Incoloy, or stainless steel. Some are constructed from metal materials such as steel.
なお、第１層を形成する酸化物物質は、超電導特性を有
するのが望ましいが、このことは必要条件ではない。Note that although it is desirable that the oxide material forming the first layer has superconducting properties, this is not a necessary condition.
［発明の作用および効果コ
この発明によって、酸化物超電導膜を製造する場合、第
１層が、まず、酸化物超電導物質と同じ元素を含む酸化
物物質によって形成される。このような第１層は、平滑
な表面状態で析出されればよく、たとえ非晶質であって
もよい。次に、第１層が熱処理されたとき、その平滑な
表面状態が保たれたまま、結晶化される。次に、第１層
と異なる成膜条件または成膜法で、酸化物超電導物質か
らなる第２層が形成される。この場合、第１層は、酸化
物超電導物質と同じ元素を含む酸化物超電導物質からな
るものであるので、第２層を構成する酸化物超電導物質
と化学量論比の点において近いものとなっている。した
がって、このような第１層を結晶化した後、その上に第
２層を形成したとき、この第２層は、結晶配向性ととも
に緻密性かつ平滑性に優れた膜とすることができる。そ
して、このように、第１層をまず形成し、それに結晶配
向性を与え、次いで、第２層を、第１層とは異なる成膜
条件または成膜法で形成すれば、たとえば、酸化物超電
導膜を第１層または第２層の形成条件単独で成膜した場
合に比べて、高い臨界電流密度が得られることがわかっ
た。[Operations and Effects of the Invention] When manufacturing an oxide superconducting film according to the present invention, the first layer is first formed of an oxide material containing the same element as the oxide superconducting material. Such a first layer may be deposited with a smooth surface, and may even be amorphous. Next, when the first layer is heat treated, it is crystallized while maintaining its smooth surface condition. Next, a second layer made of an oxide superconducting material is formed using different film forming conditions or a different film forming method from the first layer. In this case, since the first layer is made of an oxide superconducting material containing the same elements as the oxide superconducting material, it is close in stoichiometric ratio to the oxide superconducting material constituting the second layer. ing. Therefore, when such a first layer is crystallized and then a second layer is formed thereon, the second layer can be a film having excellent crystal orientation, density, and smoothness. In this way, if the first layer is first formed and given crystal orientation, and then the second layer is formed under different deposition conditions or deposition methods than the first layer, for example, oxide It has been found that a higher critical current density can be obtained than when a superconducting film is formed under only the conditions for forming the first layer or the second layer.
たとえば多結晶基板上に、酸化物超電導膜を、直接、形
成しても、前述のように、高い臨界電流密度を得ること
ができない場合がある。この理由として、基板と酸化物
超電導膜とが反応すること、熱膨張係数が異なることに
より、酸化物超電導膜に歪およびクラックが生じること
、析出粒子間の融合度が低いこと、などが挙げられる。For example, even if an oxide superconducting film is directly formed on a polycrystalline substrate, a high critical current density may not be obtained as described above. Reasons for this include reactions between the substrate and the oxide superconducting film, distortion and cracks in the oxide superconducting film due to differences in thermal expansion coefficients, and a low degree of fusion between precipitated particles. .
この発明において、超電導膜となる第２層を形成する前
に形成される第１層は、中間層として機能し、上述のよ
うな基板と酸化物超電導膜との間での不所望な相互作用
を防止する働きがある。In this invention, the first layer formed before forming the second layer, which becomes the superconducting film, functions as an intermediate layer and prevents the undesired interaction between the substrate and the oxide superconducting film as described above. It works to prevent
また、第１層は、第２層を構成する酸化物超電導物質と
同じ元素を含む酸化物物質から構成されるので、たとえ
ば気相法で用いられる蒸着粒子の原材料となるターゲッ
ト等を共通に用いることができ、したがって、必要とあ
れば、第１層の形成と第２層の形成とを同じ装置または
連続した工程をもって実施することを可能にすることも
できる。Furthermore, since the first layer is composed of an oxide material containing the same element as the oxide superconducting material constituting the second layer, a target, etc., which is a raw material for vapor deposition particles used in a vapor phase method, is used in common. Therefore, if necessary, it may be possible to perform the formation of the first layer and the formation of the second layer using the same device or in a continuous process.
この発明において、基板として、可撓性を有する長尺状
のものを用いれば、超電導コイル、超電導ケーブル等に
使用される酸化物超電導線を得ることができる。In this invention, if a flexible elongated substrate is used, an oxide superconducting wire used for superconducting coils, superconducting cables, etc. can be obtained.
また、この発明では、前述したように、基板として、多
結晶体を用いても、単結晶基板を用いた場合に匹敵する
超電導特性、特に臨界電流密度を得ることができる。そ
のため、より高い臨界電流密度を維持しながら、可撓性
を有する基板の材料の選択範囲を拡げることができる。Furthermore, in the present invention, as described above, even if a polycrystalline material is used as the substrate, superconducting properties, particularly critical current density, comparable to those obtained when a single crystal substrate is used can be obtained. Therefore, it is possible to expand the selection range of flexible substrate materials while maintaining a higher critical current density.
［実施例コ
以下に、この発明に従った行なった実施例および比較例
について説明する。[Examples] Examples and comparative examples according to the present invention will be described below.
実施例１
スパッタリング法により、Ｙ−Ｂａ−Ｃｕ−０膜からな
る第１層を、以下の第１表に示した条件で作製した。Example 1 A first layer consisting of a Y-Ba-Cu-0 film was produced by sputtering under the conditions shown in Table 1 below.
第１表
得られた第１層について、その表面を電子顕微鏡で観察
したところ、粒子間の境界か判別できないほど平滑な膜
であった。また、Ｘ線回折で、結晶性を調べたところ、
Ｙ−Ｂａ−Ｃｕ−０系超電導物質に割当てられるピーク
は認められなかった。When the surface of the first layer obtained in Table 1 was observed using an electron microscope, it was found that the film was so smooth that boundaries between particles could not be discerned. In addition, when examining the crystallinity by X-ray diffraction,
No peak assigned to Y-Ba-Cu-0 based superconducting material was observed.
また、膜の一部を切取り、組成比を調べたところ、ＹＩ
Ｂａ、ｏＣ！、、、９であった。In addition, when we cut out a part of the film and examined the composition ratio, we found that YI
Ba,oC! ,,,9.
上述の第１層としての酸化物物質膜を、電気炉において
、９００℃で１分間、熱処理した。熱処理後の膜の表面
を、電子顕微鏡で観察したところ、熱処理前に観察した
表面形状とほとんど変化がないことを確認した。Ｘ線回
折で結晶性を調べたところ、基板に対して、Ｃ軸が垂直
に配向しているのが認められた。The above-described oxide material film as the first layer was heat-treated at 900° C. for 1 minute in an electric furnace. When the surface of the film after heat treatment was observed using an electron microscope, it was confirmed that there was almost no change in the surface shape observed before heat treatment. When the crystallinity was examined by X-ray diffraction, it was found that the C axis was oriented perpendicularly to the substrate.
次に、上述の第１層の上に、以下の第２表に示す条件の
スパッタ法により、Ｙ−Ｂａ−Ｃｕ−０膜からなる第２
層を形成した。Next, a second Y-Ba-Cu-0 film was formed on the first layer by sputtering under the conditions shown in Table 2 below.
formed a layer.
（以下余白）
第２表
得られた酸化物超電導膜の超電導特性を測定したところ
、液体窒素中での臨界電流密度Ｊｃは、８．９Ｘ１０３
Ａ／ｃｍ２であった。さらに、９５０℃で１０分間の熱
処理を行なった後のＪｃは、５．６Ｘ１０５Ａ／Ｃｍ２
であった。(Left below) Table 2 The superconducting properties of the obtained oxide superconducting film were measured, and the critical current density Jc in liquid nitrogen was 8.9X103
It was A/cm2. Furthermore, Jc after heat treatment at 950℃ for 10 minutes is 5.6X105A/Cm2
Met.
実施例２
第１層は、上述の実施例１と同じ成膜条件および同じ熱
処理条件で作製した。Example 2 The first layer was produced under the same film formation conditions and the same heat treatment conditions as in Example 1 described above.
次いで、第２層を、以下の第３表に示す条件のＣＶＤ法
により形成した。Next, a second layer was formed by CVD under the conditions shown in Table 3 below.
第３表
得られた超電導膜の液体窒素中でのＪｃは、３゜０×１
０３Ａ／ｃｍ２であり、さらに９５０ ℃で１０分間の
熱処理を行なった後のＪｃは、２． ０×１０５Ａ／ｃ
ｍ２であった。Table 3 Jc of the obtained superconducting film in liquid nitrogen is 3°0×1
03A/cm2, and after further heat treatment at 950°C for 10 minutes, Jc is 2.03A/cm2. 0x105A/c
It was m2.
実施例３
第１層は、実施例１と同じ成膜条件および同じ熱処理条
件で作製した。Example 3 The first layer was produced under the same film formation conditions and the same heat treatment conditions as in Example 1.
次いで、第２層を、以下の第４表で示す条件のレーザア
ブレーション法を用いて作製した。Next, a second layer was produced using a laser ablation method under the conditions shown in Table 4 below.
（以下余白）
第４表
得られた酸化物超電導膜の液体窒素中でのＪｃは、５．
０ＸＩＯ３Ａ／ｃｍ２であり、さらに９５０℃で１０分
間の熱処理を行なった後のＪｃは、７、 ５ Ｘ １０
５Ａ／ ｃ ｍ２であった。(Left below) Table 4 Jc of the obtained oxide superconducting film in liquid nitrogen is 5.
0XIO3A/cm2, and after further heat treatment at 950°C for 10 minutes, Jc is 7.5 x 10
It was 5A/cm2.
比較例
前述の第２表で示す条件のスパッタ法により、Ｙ−Ｂａ
−Ｃｕ−０膜を作製した。Comparative Example By sputtering under the conditions shown in Table 2 above, Y-Ba
-Cu-0 film was produced.
得られた膜の液体窒素中でのＪｃは、１，０×１０３Ａ
／ｃｍ２であり、さらに９５０℃で１０分間の熱処理を
行なった後のＪｃは、１．ＯＸＩ０４Ａ／ｃｍ２であっ
た。The Jc of the obtained film in liquid nitrogen is 1,0×103A
/cm2, and after further heat treatment at 950°C for 10 minutes, Jc is 1. It was OXI04A/cm2.
この比較例を、前述した実施例１〜３と比較すればわか
るように、同じ成膜法および同じ成膜条件で酸化物超電
導膜を形成した場合、高いＪｃを得ることができない。As can be seen by comparing this comparative example with Examples 1 to 3 described above, when an oxide superconducting film is formed using the same film forming method and the same film forming conditions, a high Jc cannot be obtained.
Claims (5)
化物物質からなる平滑性を有する第１層を形成し、 前記第１層を熱処理して前記酸化物物質に結晶配向性を
与え、 前記結晶配向性が与えられた前記第１層上に、前記第１
層を形成するのとは異なる成膜条件または成膜法で前記
酸化物超電導物質からなる第２層を形成する、 各ステップを備える、酸化物超電導膜の製造方法。(1) Forming a smooth first layer made of an oxide material containing the same element as the oxide superconducting material on a substrate, and heat-treating the first layer to impart crystal orientation to the oxide material. , on the first layer given the crystal orientation, the first
A method for producing an oxide superconducting film, comprising steps of forming a second layer made of the oxide superconducting material under different film forming conditions or a film forming method from those used for forming the second layer.
前記第２層を、スパッタ法、レーザアブレーション法、
蒸着法、ＣＶＤ法または熱分解法により形成する、請求
項１記載の酸化物超電導膜の製造方法。(2) the first layer is formed by sputtering, and
The second layer is formed by a sputtering method, a laser ablation method,
The method for producing an oxide superconducting film according to claim 1, which is formed by a vapor deposition method, a CVD method, or a thermal decomposition method.
項１または２記載の酸化物超電導膜の製造方法。(3) The method for manufacturing an oxide superconducting film according to claim 1 or 2, wherein the substrate is a flexible elongated body.
酸化物超電導膜の製造方法。(4) The method for manufacturing an oxide superconducting film according to claim 3, wherein the substrate is made of polycrystalline material.
トリア、シリカもしくはチタニアからなるセラミックス
、または、白金、銅、銀、アルミニウム、ニッケル、ハ
ステロイ、インコネル、インコロイもしくはステンレス
鋼からなる金属材料によって構成される、請求項３記載
の酸化物超電導膜の製造方法。(5) The substrate is made of a ceramic material made of stabilized zirconia, alumina, yttria, silica, or titania, or a metal material made of platinum, copper, silver, aluminum, nickel, Hastelloy, Inconel, Incoloy, or stainless steel. The method for manufacturing an oxide superconducting film according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1135231A JP2814563B2 (en) | 1989-05-29 | 1989-05-29 | Manufacturing method of oxide superconducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1135231A JP2814563B2 (en) | 1989-05-29 | 1989-05-29 | Manufacturing method of oxide superconducting film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02311398A true JPH02311398A (en) | 1990-12-26 |
| JP2814563B2 JP2814563B2 (en) | 1998-10-22 |
Family
ID=15146877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1135231A Expired - Lifetime JP2814563B2 (en) | 1989-05-29 | 1989-05-29 | Manufacturing method of oxide superconducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2814563B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0558625A (en) * | 1991-08-28 | 1993-03-09 | Sumitomo Electric Ind Ltd | Oxide superconductor thin film having insulating layer and its production |
| JPH05139737A (en) * | 1991-11-15 | 1993-06-08 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Oxide thin film and film forming method therefor |
| US5386798A (en) * | 1993-10-06 | 1995-02-07 | Martin Marietta Energy Systems, Inc. | Method for continuous control of composition and doping of pulsed laser deposited films |
| JP2003206134A (en) * | 2002-12-04 | 2003-07-22 | Sumitomo Electric Ind Ltd | High temperature superconducting thick film member and method for producing the same |
| WO2006082747A1 (en) * | 2005-02-03 | 2006-08-10 | Sumitomo Electric Industries, Ltd. | Superconducting thin film material, superconducting wire rod and methods for manufacturing such superconducting thin film material and superconducting wire rod |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239738A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Superconductor wire and manufacture thereof |
| JPS6463215A (en) * | 1987-09-03 | 1989-03-09 | Fujikura Ltd | High temperature superconductive material |
-
1989
- 1989-05-29 JP JP1135231A patent/JP2814563B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239738A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Superconductor wire and manufacture thereof |
| JPS6463215A (en) * | 1987-09-03 | 1989-03-09 | Fujikura Ltd | High temperature superconductive material |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0558625A (en) * | 1991-08-28 | 1993-03-09 | Sumitomo Electric Ind Ltd | Oxide superconductor thin film having insulating layer and its production |
| JPH05139737A (en) * | 1991-11-15 | 1993-06-08 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Oxide thin film and film forming method therefor |
| US5386798A (en) * | 1993-10-06 | 1995-02-07 | Martin Marietta Energy Systems, Inc. | Method for continuous control of composition and doping of pulsed laser deposited films |
| US5499599A (en) * | 1993-10-06 | 1996-03-19 | Martin Marietta Energy Systems, Inc. | Method for continuous control of composition and doping of pulsed laser deposited films by pressure control |
| JP2003206134A (en) * | 2002-12-04 | 2003-07-22 | Sumitomo Electric Ind Ltd | High temperature superconducting thick film member and method for producing the same |
| WO2006082747A1 (en) * | 2005-02-03 | 2006-08-10 | Sumitomo Electric Industries, Ltd. | Superconducting thin film material, superconducting wire rod and methods for manufacturing such superconducting thin film material and superconducting wire rod |
| JP2006216365A (en) * | 2005-02-03 | 2006-08-17 | Sumitomo Electric Ind Ltd | Superconductive thin film material, superconductive wire and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2814563B2 (en) | 1998-10-22 |
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