JPH03261607A - Manufacture of high-temperature superconducting thin film - Google Patents
Manufacture of high-temperature superconducting thin filmInfo
- Publication number
- JPH03261607A JPH03261607A JP2058512A JP5851290A JPH03261607A JP H03261607 A JPH03261607 A JP H03261607A JP 2058512 A JP2058512 A JP 2058512A JP 5851290 A JP5851290 A JP 5851290A JP H03261607 A JPH03261607 A JP H03261607A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- substrate
- axis
- oxide superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002887 superconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000005289 physical deposition Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 229910002331 LaGaO3 Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、高温超電導薄膜の作製方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for producing a high temperature superconducting thin film.
より詳細には、結晶性および電気特性の優れた高温超電
導薄膜および作製方法に関する。More specifically, the present invention relates to a high-temperature superconducting thin film with excellent crystallinity and electrical properties and a manufacturing method.
従来の技術
Ｙ−Ｂａ−Ｃｕ−○系、Ｂｉ −３ｒ −Ｃａ−Ｃｕ−
○系およびＴＩ −Ｂａ−Ｃａ−Ｃｕ −０系の各酸化
物超電導体は、臨界温度が高く、実用化が有望と考えら
れている。Conventional technology Y-Ba-Cu-○ system, Bi-3r-Ca-Cu-
The oxide superconductors of the ○ series and the TI-Ba-Ca-Cu-0 series have high critical temperatures and are considered promising for practical use.
これらの酸化物超電導体を、ジョセフソン素子、超電導
トランジスタ等の電子デバイスに応用するためには、薄
膜化することが必須である。In order to apply these oxide superconductors to electronic devices such as Josephson elements and superconducting transistors, it is essential to make them thin.
一方、酸化物超電導体は、その超電導特性に異方性のあ
ることが知られており、特に、結晶のＣ軸に垂直な方向
の超電導臨界電流密度が大きい。On the other hand, oxide superconductors are known to have anisotropy in their superconducting properties, and particularly have a large superconducting critical current density in the direction perpendicular to the C-axis of the crystal.
従来、薄膜の表面に平行ｆ二方向に大きい電流を流すこ
とができる、Ｃ軸配向の酸化物超電導体薄膜を作製する
研究が多く行われてきた。その結果、スパッタリング法
、蒸着法、レーザアブレーション法等の方法で、良質１
．Ｃ軸配向の酸化物超電導体の単結晶薄膜が得られてい
る。Conventionally, much research has been carried out to fabricate a C-axis oriented oxide superconductor thin film that allows a large current to flow in two directions f parallel to the surface of the thin film. As a result, high quality 1.
．． Single crystal thin films of C-axis oriented oxide superconductors have been obtained.
発明が解決しようとする課題
上記の酸化物超電導体は、コヒーレンス長にも異方性が
あり、ａ軸方向のコヒーレンス長は、Ｃ軸方向のコヒー
レンス長よりも長い（ｃｒＩＩＢ方向のコヒーレンス長
二数人、ａ軸方向のコヒーレンス長：ｌＯ数人）。従っ
て、酸化物超電導体をエレクトロニクスに応用する、例
えばジョセフソン接合を作製するためには、コヒーレン
ス長ノよす長いａ軸配向の薄膜が必要とされている。Problems to be Solved by the Invention The above oxide superconductor also has anisotropy in coherence length, and the coherence length in the a-axis direction is longer than the coherence length in the c-axis direction (the coherence length in the crIIB direction is Coherence length in the a-axis direction: lO (several people). Therefore, in order to apply oxide superconductors to electronics, for example to fabricate Josephson junctions, an a-axis oriented thin film with a long coherence length is required.
ａ軸配向の酸化物超電導薄膜を、例えばスパッタリング
法で作製するには、ｃｌｌｌｌＩＩ配向の酸化物超電導
薄膜を作製する場合より、基板温度を数１０℃低くすれ
ばよいことがわかっている。ところが、この基板温度は
低過ぎて、この基板温度で成膜すると、薄膜を構成する
酸化物超電導体の結晶性が悪く、また、結晶に酸素が十
分に供給されない。It has been found that in order to produce an a-axis oriented oxide superconducting thin film by, for example, a sputtering method, the substrate temperature needs to be lowered by several tens of degrees Celsius than in the case of producing a cllllII oriented oxide superconducting thin film. However, this substrate temperature is too low, and when a film is formed at this substrate temperature, the crystallinity of the oxide superconductor forming the thin film is poor, and oxygen is not sufficiently supplied to the crystal.
従って、従来の方法で作製されたａ軸配向の酸化物超電
導薄膜の電気特性は良好ではなかった。Therefore, the electrical properties of the a-axis oriented oxide superconducting thin film produced by the conventional method were not good.
従って、本発明の目的は、上記従来技術の問題点を解決
して、電気的特性の優れたａ軸配向の酸化物超電導体に
よる高温超電導薄膜の作製方法を提供することにある。Therefore, an object of the present invention is to solve the problems of the prior art described above and provide a method for producing a high-temperature superconducting thin film using an a-axis oriented oxide superconductor having excellent electrical properties.
課題を解決するための手段
本発明に従うと、酸化物超電導体による高温超電導薄膜
を基板上に作製する方法において、最初に基板温度を前
記酸化物超電導体がａ軸配向に成長する温度；こして厚
さ２０〜１０００ Ａの酸化物超電導体の薄膜を形成し
、該薄膜上に前記温度より１０〜１００℃高い基板温度
で酸化物超電導体の薄膜を形成し、結晶性および電気特
性の優れたａ軸配向の酸化物超電導薄膜を作製すること
を特徴とする高温超電導薄膜の作製方法が提供される。Means for Solving the Problems According to the present invention, in a method for producing a high-temperature superconducting thin film of an oxide superconductor on a substrate, the substrate temperature is first adjusted to a temperature at which the oxide superconductor grows in the a-axis orientation; A thin film of an oxide superconductor with a thickness of 20 to 1000 A is formed, and a thin film of an oxide superconductor is formed on the thin film at a substrate temperature 10 to 100°C higher than the above temperature, and a thin film of an oxide superconductor with excellent crystallinity and electrical properties is formed. A method for producing a high-temperature superconducting thin film is provided, which is characterized by producing an a-axis oriented oxide superconducting thin film.
作用
本発明の方法は、基板上に最初にＣ軸配向の酸化物超電
導薄膜を成長させる場合より数１０℃低い基板温度でａ
軸配向の薄膜を２０〜１０００人程度成長させ、下地と
して、その上にさきの温度より１０〜１００℃高い基板
温度で薄膜を成長させるところにその主要な特徴がある
。本発明の方法では、ａ軸配向の下地薄膜上に、成膜に
最適な基板温度で薄膜を成長させるため、結晶性がよく
、酸素が十分に取り込まれた酸化物超電導薄膜が作製で
きる。Operation The method of the present invention allows a
Its main feature is that about 20 to 1,000 axially oriented thin films are grown, and then a thin film is grown on top of it at a substrate temperature 10 to 100 degrees Celsius higher than the previous temperature. In the method of the present invention, a thin film is grown on an a-axis oriented base thin film at the optimum substrate temperature for film formation, so an oxide superconducting thin film with good crystallinity and sufficient oxygen uptake can be produced.
本発明の方法は、各種の酸化物超電導体の薄膜化に応用
できるが、特にＹ−Ｂａ−Ｃｕ−０系酸化物超電導体お
よびＢｉ −３ｒ −Ｃａ−Ｃｕ−○系酸化物超電導体
に有効である。また、本発明の方法が適用できる成膜方
法は、例えばスパッタリング法に代表される物理的蒸着
法が好ましく、真空蒸着法等にも適用できる。The method of the present invention can be applied to thinning various oxide superconductors, but is particularly effective for Y-Ba-Cu-0-based oxide superconductors and Bi-3r-Ca-Cu-○-based oxide superconductors. It is. Further, the film forming method to which the method of the present invention can be applied is preferably a physical vapor deposition method represented by, for example, a sputtering method, and can also be applied to a vacuum vapor deposition method.
本発明の方法で酸化物超電導薄膜を作製するのに使用で
きる基板としては、ＭｇＯ、ＳｒＴ ｉ○３、ＬａＡ］
Ｏ：＋、ＬａＧａＯ３、ＹＳｚ等の酸化物単結晶基板が
好ましい。Substrates that can be used to produce an oxide superconducting thin film by the method of the present invention include MgO, SrT i○3, LaA]
Oxide single crystal substrates such as O:+, LaGaO3, and YSz are preferred.
以下、本発明を実施例により、さらに詳しく説明するが
、以下の開示は本発明の単なる実施例に過ぎず、本発明
の技術的範囲をなんら制限するものではない。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
実施例
本発明の方法と、従来の方法でａＮｉ配向の酸化物超電
導体による高温超電導薄膜を作製した。成膜法としては
、ＲＦスパッタリング法を使用し、基板には、ＭｇＯ（
１００）単結晶基板を用いた。EXAMPLE A high-temperature superconducting thin film of an aNi-oriented oxide superconductor was fabricated using the method of the present invention and a conventional method. The RF sputtering method was used as the film forming method, and the substrate was made of MgO (
100) A single crystal substrate was used.
実施例１
ターゲットに、薄膜の組成がＹ：Ｂａ：Ｃｕの原子比で
１：２：３になる焼結体を使用した。本発明の方法によ
る作製条件を以下の第１表に示す。Example 1 A sintered body having a thin film composition of Y:Ba:Cu in an atomic ratio of 1:2:3 was used as a target. The manufacturing conditions according to the method of the present invention are shown in Table 1 below.
本発明の方法では、上記の条件で連続して下層および上
層を成膜した。また、他の条件は等しくし、基板温度を
６２０℃で一定にする従来の方法で、総膜厚が等しくな
るように成膜した。成膜後、両者の高温超電導薄膜の超
電導特性を測定した。結果を以下の第２表にともに記す
。In the method of the present invention, the lower layer and the upper layer were successively formed under the above conditions. Further, the films were formed to have the same total film thickness using the conventional method of keeping the other conditions the same and keeping the substrate temperature constant at 620°C. After film formation, the superconducting properties of both high-temperature superconducting thin films were measured. The results are also shown in Table 2 below.
また、ＲＨＥＥＤによると、本発明の方法で作製した高
温超電導薄膜には、Ｃ軸方向の長周期構造が、電子ビー
ム入射方向と直角に現れた。Furthermore, according to RHEED, a long-period structure in the C-axis direction appeared in the high-temperature superconducting thin film produced by the method of the present invention, perpendicular to the electron beam incident direction.
第３表
実施例２
ターゲットに、薄膜の組成がＢｉ ：Ｓｒ ：Ｃａ ：
Ｃｕの原子比て２：２：２：３となる焼鉱体を使用した
。Table 3 Example 2 The target has a thin film composition of Bi:Sr:Ca:
A burnt ore body with a Cu atomic ratio of 2:2:2:3 was used.
本発明の方法による作製条件を以下の第３表に示す。The manufacturing conditions according to the method of the present invention are shown in Table 3 below.
本発明の方法では、上記の条件で連続して下層および上
層を成膜した。また、他の条件は等しくし、基板温度を
６２０℃で一定にする従来の方法で、総膜厚が等しくな
るように成膜した。成膜後、両者の高温超電導薄膜の超
電導特性を測定した。結果を以下の第４表にともに記す
。In the method of the present invention, the lower layer and the upper layer were successively formed under the above conditions. Further, the films were formed to have the same total film thickness using the conventional method of keeping the other conditions the same and keeping the substrate temperature constant at 620°C. After film formation, the superconducting properties of both high-temperature superconducting thin films were measured. The results are also shown in Table 4 below.
また、ＲＨＥＥＤによると、本発明の方法で作製した高
温超電導薄膜には、Ｃ軸方向の長周期構造が、電子ビー
ム入射方向と直角に現れた。Furthermore, according to RHEED, a long-period structure in the C-axis direction appeared in the high-temperature superconducting thin film produced by the method of the present invention, perpendicular to the electron beam incident direction.
第４表
上記のように、本発明の方法で成膜した高温超電導薄膜
は、いずれも従来の方法で成膜した薄膜よりも優れた特
性を有する。Table 4 As shown above, the high temperature superconducting thin films formed by the method of the present invention all have better properties than thin films formed by the conventional method.
発明の効果
本発明の方法によれば、従来よりも優れた超電導特性の
高温超電導薄膜が作製可能である。本発明の方法は、単
に基板温度の制御を行うだけであるので、従来の方法と
較べてコストが特に上昇することもない。Effects of the Invention According to the method of the present invention, a high-temperature superconducting thin film with superior superconducting properties than conventional ones can be produced. Since the method of the present invention simply controls the substrate temperature, there is no particular increase in cost compared to conventional methods.
本発明により、特にエレクトロニクス分野への酸化物超
電導体の応用が促進される。The present invention particularly facilitates the application of oxide superconductors to the electronics field.
Claims (1)
する方法において、最初に基板温度を前記酸化物超電導
体がａ軸配向に成長する温度にして厚さ２０〜１０００
Åの酸化物超電導体の薄膜を形成し、該薄膜上に前記温
度より１０〜１００℃高い基板温度で酸化物超電導体の
薄膜を形成し、結晶性および電気特性の優れたａ軸配向
の酸化物超電導薄膜を作製することを特徴とする高温超
電導薄膜の作製方法。In a method for producing a high-temperature superconducting thin film using an oxide superconductor on a substrate, the substrate temperature is first set to a temperature at which the oxide superconductor grows in the a-axis orientation, and the thickness is 20 to 1000.
A thin film of an oxide superconductor is formed on the thin film at a substrate temperature of 10 to 100°C higher than the above temperature, and an a-axis oriented oxidation film with excellent crystallinity and electrical properties is formed. A method for producing a high-temperature superconducting thin film, characterized by producing a physical superconducting thin film.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058512A JP2819743B2 (en) | 1990-03-09 | 1990-03-09 | Preparation method of high temperature superconducting thin film |
| CA002037795A CA2037795C (en) | 1990-03-09 | 1991-03-08 | Process for preparing high-temperature superconducting thin films |
| US07/668,263 US5151408A (en) | 1990-03-09 | 1991-03-11 | Process for preparing a-axis oriented high-temperature superconducting thin films |
| EP91400661A EP0446145B1 (en) | 1990-03-09 | 1991-03-11 | Process for preparing high-temperature superconducting thin films |
| DE69115957T DE69115957T2 (en) | 1990-03-09 | 1991-03-11 | Process for producing high-temperature superconducting thin films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058512A JP2819743B2 (en) | 1990-03-09 | 1990-03-09 | Preparation method of high temperature superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03261607A true JPH03261607A (en) | 1991-11-21 |
| JP2819743B2 JP2819743B2 (en) | 1998-11-05 |
Family
ID=13086480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2058512A Expired - Fee Related JP2819743B2 (en) | 1990-03-09 | 1990-03-09 | Preparation method of high temperature superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819743B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05147946A (en) * | 1991-12-02 | 1993-06-15 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Production of bisrcacuo superconducting film |
-
1990
- 1990-03-09 JP JP2058512A patent/JP2819743B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05147946A (en) * | 1991-12-02 | 1993-06-15 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Production of bisrcacuo superconducting film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819743B2 (en) | 1998-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |