JPH01140622A - Device having superconducting film - Google Patents
Device having superconducting filmInfo
- Publication number
- JPH01140622A JPH01140622A JP62298815A JP29881587A JPH01140622A JP H01140622 A JPH01140622 A JP H01140622A JP 62298815 A JP62298815 A JP 62298815A JP 29881587 A JP29881587 A JP 29881587A JP H01140622 A JPH01140622 A JP H01140622A
- Authority
- JP
- Japan
- Prior art keywords
- film
- rare earth
- ceramic substrate
- compound
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 10
- 239000005749 Copper compound Substances 0.000 claims abstract description 8
- 150000001880 copper compounds Chemical class 0.000 claims abstract description 8
- 150000001553 barium compounds Chemical class 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 2
- 101100235549 Caenorhabditis elegans lin-53 gene Proteins 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 5
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012928 buffer substance Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910000657 niobium-tin Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明はセラミック基板上に超電導膜体を形成した装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus in which a superconducting film is formed on a ceramic substrate.
［従来の技術］
超電導効果が得られる物質としては、絶対温度２０に付
近でその効果が得られるＮｂ３Ｓｎ系、Ｎｂ３Ｇｅ系、
ＮｂＴｉ系等の金属系超電導物質が知られている。この
ような従来の金属合金系の超電導物質より、はるかに商
い温度（絶対温度的９０Ｋ）で超電導効果を得ることが
可能なＲＢａ２Ｃｕ３０□−８系超電導セラミツクス（
ただし、Ｒａ ＝Ｙ、 Ｎｄ 、 Ｄｙ 、 Ｅｔｌ
、 Ｇｄ 、 Ｈａ 等の３価の希土類元素、Ｘは１よ
り小さい敬値）も最近発見され、実用化に向けて各方面
で検討が進められている。例えば、このような超電導物
質を回路配線等に利用するため、超電導物質から吠る７
謄を基板表面に形成することが検討されている。超電導
厚膜の形成に用いられる基板としては、従来、部分安定
化ジルコニア（ＰＳＺ）基板、あるいは純度９９．９９
％程度の超高純度アルミナ（Ａ１２ｏ３）基板等が使用
されている。[Prior art] Substances that can obtain superconducting effects include Nb3Sn-based materials, Nb3Ge-based materials that provide their effects at an absolute temperature of around 20,
Metal-based superconducting materials such as NbTi-based materials are known. RBa2Cu30□-8-based superconducting ceramics (RBa2Cu30□-8) are capable of achieving superconducting effects at much lower temperatures (absolute temperature of 90K) than conventional metal alloy-based superconducting materials.
However, Ra = Y, Nd, Dy, Etl
Trivalent rare earth elements such as , Gd, and Ha (where X is a value smaller than 1) have recently been discovered, and studies are underway in various fields for their practical application. For example, in order to use such superconducting materials for circuit wiring, etc.,
Forming the cover on the surface of the substrate is being considered. Conventionally, the substrate used for forming superconducting thick films is a partially stabilized zirconia (PSZ) substrate or a substrate with a purity of 99.99.
% ultra-high purity alumina (A12o3) substrate, etc. are used.
［発明が解決しようとする開題点］
ところで、部分安定化ジルコニア（ＰＳＺ）、あるいは
純度９９．９９％程度の超高純度アルミす（Ａｌ ２０
３）は高価である。そこで、純度９６％程度の安価なア
ルミナ基板を使用すると、超電導特性を示すペロブスカ
イト型の結晶構造の厚膜が得られないか、あるいはペロ
ブスカイト型の結晶構造が得られたとしても厚膜にクラ
ックが生じてしまうために、絶対温度９０に付近で超電
導特性を得ることが困難であった。[Problem to be solved by the invention] By the way, partially stabilized zirconia (PSZ) or ultra-high purity aluminum with a purity of about 99.99% (Al 20
3) is expensive. Therefore, if an inexpensive alumina substrate with a purity of about 96% is used, a thick film with a perovskite-type crystal structure that exhibits superconducting properties cannot be obtained, or even if a perovskite-type crystal structure is obtained, the thick film will have cracks. Therefore, it has been difficult to obtain superconducting properties at an absolute temperature of about 90°C.
そこで、本発明の目的は、低コスト化及び信頼性の向上
が可能な超電導肢体を有する装置を提供するにとにある
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a device having superconducting limbs that can reduce costs and improve reliability.
［問題点を解決するための手段］
上記問題点を解決し、上記目的を達成するための本発明
は、セラミック基板と、前記セラミンク基板上に希土類
酸化物とバリウム化合物と銅化合物とから成る混合物を
塗布し、熱処理することによって形成された第１の膜と
、前記第１の膜の上に希土類酸化物とバリウム化合物と
銅化合物とから成る混合物を塗布し、酸素雰囲気中で熱
処理することによって形成されたＲＢａ２Ｃｕ３ｏ７−
ｘ（但し、Ｒは３価の希土類元素、Ｘは数値）から成る
第２の膜とを備えている超電導膜体を有する装置に係わ
るものである。[Means for Solving the Problems] In order to solve the above problems and achieve the above objects, the present invention includes a ceramic substrate, and a mixture comprising a rare earth oxide, a barium compound, and a copper compound on the ceramic substrate. A first film formed by applying and heat-treating; and a mixture of a rare earth oxide, a barium compound, and a copper compound being applied on the first film and heat-treated in an oxygen atmosphere. Formed RBa2Cu3o7-
The present invention relates to a device having a superconducting film body including a second film made of x (where R is a trivalent rare earth element and X is a numerical value).
［作用］
上記発明によれば、セラミック基板と第２の膜との間に
介在する第１の膜は第２の膜と同様に、希土類酸化物と
バリウム化合物と銅化合物とで形成されたものであるか
ら、ＲＢａ２Ｃｕ３０７−ｘ又はこれに近いものである
。従って第１の膜はセラミック基板と第２の膜との熱膨
張係数や格子定数の違いを緩和する効果を発揮する。こ
の結果、セラミック基板の質が悪くても、第２の膜の超
電導特性を良くすることができる。[Function] According to the above invention, the first film interposed between the ceramic substrate and the second film is formed of a rare earth oxide, a barium compound, and a copper compound, like the second film. Therefore, it is RBa2Cu307-x or something close to this. Therefore, the first film exhibits the effect of alleviating the difference in thermal expansion coefficient and lattice constant between the ceramic substrate and the second film. As a result, even if the quality of the ceramic substrate is poor, the superconducting properties of the second film can be improved.
［実施例］
次に、本発明の実施例に係わる超電導膜体を有する装置
及びその製造方法を説明する。[Example] Next, a device having a superconducting film body and a manufacturing method thereof according to an example of the present invention will be described.
まず、厚膜ペーストの原料粉末を得るなめにＹ２Ｏ２（
酸化イツトリウム）を２．４２ｇ、ＢａＣＯ３（炭酸バ
・リウム）を８．４６ｇ、Ｃｕ Ｏ（酸化銅）を５．１
１ｇそれぞれ秤量してメノウ乳鉢で粉砕しながら３０分
間混合し、原料混合粉末ご得た。なお、Ｙ、９ａ 、Ｃ
ｕの原子比が１＝２：３になるように各原料が秤量され
る。First, in order to obtain the raw material powder for the thick film paste, Y2O2 (
2.42 g of yttrium oxide), 8.46 g of BaCO3 (barium carbonate), and 5.1 g of CuO (copper oxide).
1 g of each was weighed and mixed for 30 minutes while being crushed in an agate mortar to obtain a raw material mixed powder. In addition, Y, 9a, C
Each raw material is weighed so that the atomic ratio of u is 1=2:3.
次に、原料混合粉末にエチルアルコールを３ ｍｌ加え
て３０分間混合した後、１００℃で１０分間乾燥した。Next, 3 ml of ethyl alcohol was added to the raw material mixed powder, mixed for 30 minutes, and then dried at 100° C. for 10 minutes.
次に、乾燥した原料混合粉末に、ブチルカルピトールア
セード１００ｇにエルセルロースＬｏｇを溶解させたバ
インダーを４ｇ加え、乳鉢で混線して超電導厚膜ペース
トを得た。Next, 4 g of a binder prepared by dissolving L Cellulose Log in 100 g of butyl calpitol acede was added to the dried raw material mixed powder, and mixed in a mortar to obtain a superconducting thick film paste.
次に、第１図に示す縦５０關、横５０ｍｍ、厚さ２ｖｍ
でＡＩ ２０３ Ｋ１度９６％のアルミナ基板１の一方
の主面に、スクリーン印９１方により上記の超電導７吸
ペーストを１５μｍの厚膜に印刷し、１００°Ｃで３０
分間乾燥した６
次に、厚膜ペーストを印刷したアルミナ基板１を酸素を
５００ｍ１／分で流しているパイプ炉中に入れて９２０
°Ｃ１４時間の熱処理（焼成）をなし、第１図に示すＹ
Ｂａ Ｃｕ ３０７．、、から成る第１の膜２を得た
。Next, as shown in Figure 1, the length is 50 mm, the width is 50 mm, and the thickness is 2 mm.
The above superconducting paste was printed to a thickness of 15 μm on one main surface of an alumina substrate 1 with an AI 203 K1 degree of 96% using a screen mark 91, and heated at 100°C for 30 minutes.
After drying for 6 minutes, the alumina substrate 1 printed with the thick film paste was placed in a pipe furnace flowing oxygen at a rate of 500 m1/min.
After heat treatment (baking) at °C for 14 hours, Y as shown in Figure 1 was used.
Ba Cu 307. A first film 2 consisting of , , and the like was obtained.
次に、第１の膜２の上に、更に上記の超電導厚膜ペース
トを１５μｍの膜厚に印刷し、１００’Ｃ１３０分間乾
燥した。Next, the above superconducting thick film paste was further printed on the first film 2 to a thickness of 15 μm, and dried for 130 minutes at 100'C.
次に、アルミナ基板を、酸素を５００ ｒｎ（７分で流
しているパイプ炉中で９２０°Ｃ１４時間の熱処理（焼
成）をなし、第２図に示すＹＢａ ２ｃｕ ３０７−ｘ
から成る第２の膜３を得な。Next, the alumina substrate was heat-treated (baked) at 920°C for 14 hours in a pipe furnace in which oxygen was flowing at 500 rn (7 minutes), and the YBa 2cu 307-x shown in Fig. 2 was heated.
Obtain a second membrane 3 consisting of:
次に、第１及び第２の膜２．３から成る二層構造の超電
導厚膜体を有するアルミナ基板１から幅３ ｏ＋ｍ、長
さ１５ｍｍの試料片を切り出し、この試料片を、クライ
オスタット中で常温から液体窒素温度７７Ｋまで徐々に
冷却して、試料片の表面に形成された第２の膜３の電気
抵抗がゼロになる臨界温度Ｔｃ ［Ｋ］及び磁化率を測
定した。この結果、臨界温度ＴＣは９０［Ｋ］であり、
磁化率はマイナス即ち外部磁化に対して磁化方向が逆転
するとマイスナー効果が確認された。Next, a sample piece with a width of 3 o+m and a length of 15 mm is cut out from the alumina substrate 1 having a two-layered superconducting thick film body consisting of the first and second films 2.3, and this sample piece is placed in a cryostat. The sample piece was gradually cooled from room temperature to a liquid nitrogen temperature of 77 K, and the critical temperature Tc [K] at which the electrical resistance of the second film 3 formed on the surface of the sample piece became zero and the magnetic susceptibility were measured. As a result, the critical temperature TC is 90 [K],
The Meissner effect was confirmed when the magnetic susceptibility was negative, that is, when the direction of magnetization was reversed with respect to external magnetization.
［比救例１］
実施例において第１の膜２のみを形成した第１図のもの
と同一のものを作り、倶こから幅３ ｚｍ、長さ１５−
の試料片を切り出し、実施例と同様に超電導現象を調べ
たところ、液体窒素温度７７Ｋまで冷却しても超電導現
象が確認されなかった。[Comparative Example 1] A film identical to that shown in FIG. 1 in which only the first film 2 was formed in the example was made, and from the bottom it was made with a width of 3 zm and a length of 15 mm.
When a sample piece was cut out and the superconducting phenomenon was investigated in the same manner as in the example, no superconducting phenomenon was confirmed even after cooling to the liquid nitrogen temperature of 77K.
Ｌ比軟例２コ
実施例において第１の膜２のみを形成した第１図のもの
と同一のものを作り、更にこれを、酸素を５００ｍ１／
分で流したパイプ炉中で９２０℃、４時間熱処理（第２
回焼成）し、ここから幅３ ｍｍ、長さ１５ｍｍの試料
片を切り出した。しかる後、実施例と同様に超電導現象
を調べなところ、液体窒素温度７７Ｋまで冷却しても超
電導現象が確認されなかった。L Ratio Soft Example 2 An example similar to that shown in FIG. 1 in which only the first film 2 was formed was made, and further, oxygen was added to the
Heat treatment at 920℃ for 4 hours in a pipe furnace (second
A sample piece with a width of 3 mm and a length of 15 mm was cut out from the sample. Thereafter, the superconducting phenomenon was investigated in the same manner as in the example, and no superconducting phenomenon was confirmed even after cooling to the liquid nitrogen temperature of 77K.
［変形例］
本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能なものである。[Modifications] The present invention is not limited to the above-described embodiments, and, for example, the following modifications are possible.
（１） 純度９６％のアルミナ基板に限ることなく、部
分安定化ジルコニア又は高純度アルミナ基板を使用して
もよい。この場合でも第２の膜の信頼性が向上する。(1) The substrate is not limited to an alumina substrate with a purity of 96%, and partially stabilized zirconia or a high-purity alumina substrate may be used. Even in this case, the reliability of the second film is improved.
（２） 第２の膜３の上に更に超電導厚膜ベーストを印
刷し、焼成してＲＢ ａ ２ Ｃ１１３０７賊、”Ｊを
形成し、三層又はこれ以上の多層構造としてもよい。
（３） 超電導厚膜ペーストの原ｆ１杓末は、希土類
酸化ｅｆＪＲ２０３と過酸化バリウム９ａＯと過酸化＠
２Ｃｕ３Ｏ７−ｘ２との混合粉末でもよい。(2) A superconducting thick film base is further printed on the second film 3 and fired to form an RB a 2 C11307 layer, thereby forming a three-layer or more multilayer structure.
(3) The raw f1 ladle powder of the superconducting thick film paste consists of rare earth oxide efJR203, barium peroxide 9aO, and peroxide@
A mixed powder with 2Cu3O7-x2 may also be used.
（４） ＲがＹ以外のＮｄ 、Ｄｙ 、Ｅｕ 、Ｇｄ、
ＨＯ等の３価の元素の場合にも適用可能である。(4) Nd, Dy, Eu, Gd, where R is other than Y
It is also applicable to trivalent elements such as HO.
、二の場合にも原料としてはＲ２Ｏ３で示されろ希土類
酸化物を使用する。In the case of , and 2, a rare earth oxide represented by R2O3 is used as the raw material.
（５） 焼成温度は焼結可能な範囲（例えは８００°Ｃ
〜１２００℃）で種々変えることができろ。(5) The firing temperature should be within the range that allows sintering (for example, 800°C
~1200℃).
（６） 焼成工程の後に、例えば酸素雰囲気中５００°
Ｃ１１２時間のアニール工程を付加してもよい。(6) After the firing process, for example at 500° in an oxygen atmosphere.
An annealing step of C112 hours may be added.
［発明の効果］
上述から明らかな如く本発明によれば、安価なセラミッ
ク基板の超電導膜体装置を提供することができる。また
、第１の膜が緩衝物質として機能し、第２の膜の信頼性
を向上させることかできろ。[Effects of the Invention] As is clear from the above, according to the present invention, an inexpensive superconducting film device of a ceramic substrate can be provided. Also, the first membrane could function as a buffer substance and improve the reliability of the second membrane.
第１図及び第２図は本発明の実施例に係わる。超電導膜
体を有する装置の形成方法を工程順にに説明するための
断面図である。
１・・・セラミック基板、２・・・第１の膜、３・・・
第２の膜。1 and 2 relate to an embodiment of the present invention. FIG. 3 is a cross-sectional view for explaining a method for forming a device having a superconducting film body in the order of steps. 1... Ceramic substrate, 2... First film, 3...
Second membrane.
Claims (1)
と銅化合物とから成る混合物を塗布し、熱処理すること
によって形成された第１の膜と、前記第１の膜の上に希
土類酸化物とバリウム化合物と銅化合物とから成る混合
物を塗布し、酸素雰囲気中で熱処理することによって形
成されたＲＢａ＿２Ｃｕ＿３Ｏ＿７＿−＿ｘ（但し、Ｒ
は３価の希土類元素、ｘは数値）から成る第２の膜と を備えていることを特徴とする超電導膜体を有する装置
。[Scope of Claims] [1] A ceramic substrate; a first film formed by applying a mixture of a rare earth oxide, a barium compound, and a copper compound on the ceramic substrate and heat-treating the mixture; RBa_2Cu_3O_7_-_x (However, R
and a second film consisting of a trivalent rare earth element and x is a numerical value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298815A JPH01140622A (en) | 1987-11-26 | 1987-11-26 | Device having superconducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298815A JPH01140622A (en) | 1987-11-26 | 1987-11-26 | Device having superconducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140622A true JPH01140622A (en) | 1989-06-01 |
Family
ID=17864578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62298815A Pending JPH01140622A (en) | 1987-11-26 | 1987-11-26 | Device having superconducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140622A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0558625A (en) * | 1991-08-28 | 1993-03-09 | Sumitomo Electric Ind Ltd | Oxide superconductor thin film having insulating layer and its production |
| JPH05139737A (en) * | 1991-11-15 | 1993-06-08 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Oxide thin film and film forming method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242261A (en) * | 1975-09-30 | 1977-04-01 | Mitsubishi Electric Corp | Switch spring actuator |
| JPS5310307A (en) * | 1976-05-10 | 1978-01-30 | Int Nickel Co | Process for hot working of metallic powder |
-
1987
- 1987-11-26 JP JP62298815A patent/JPH01140622A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242261A (en) * | 1975-09-30 | 1977-04-01 | Mitsubishi Electric Corp | Switch spring actuator |
| JPS5310307A (en) * | 1976-05-10 | 1978-01-30 | Int Nickel Co | Process for hot working of metallic powder |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0558625A (en) * | 1991-08-28 | 1993-03-09 | Sumitomo Electric Ind Ltd | Oxide superconductor thin film having insulating layer and its production |
| JPH05139737A (en) * | 1991-11-15 | 1993-06-08 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Oxide thin film and film forming method therefor |
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