JPH055796B2 - - Google Patents
Info
- Publication number
- JPH055796B2 JPH055796B2 JP21058285A JP21058285A JPH055796B2 JP H055796 B2 JPH055796 B2 JP H055796B2 JP 21058285 A JP21058285 A JP 21058285A JP 21058285 A JP21058285 A JP 21058285A JP H055796 B2 JPH055796 B2 JP H055796B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- magnetic field
- magnetic
- raw material
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 36
- 239000002994 raw material Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21058285A JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21058285A JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6270286A JPS6270286A (ja) | 1987-03-31 |
| JPH055796B2 true JPH055796B2 (de) | 1993-01-25 |
Family
ID=16591699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21058285A Granted JPS6270286A (ja) | 1985-09-24 | 1985-09-24 | 単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6270286A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2572070B2 (ja) * | 1987-07-20 | 1997-01-16 | 東芝セラミツクス株式会社 | 単結晶の製造方法 |
| JPH10297994A (ja) * | 1997-04-25 | 1998-11-10 | Sumitomo Sitix Corp | シリコン単結晶育成方法 |
| DE10102126A1 (de) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium |
| JP7160006B2 (ja) * | 2019-09-19 | 2022-10-25 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
-
1985
- 1985-09-24 JP JP21058285A patent/JPS6270286A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6270286A (ja) | 1987-03-31 |
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