JPH0557354B2 - - Google Patents

Info

Publication number
JPH0557354B2
JPH0557354B2 JP16059386A JP16059386A JPH0557354B2 JP H0557354 B2 JPH0557354 B2 JP H0557354B2 JP 16059386 A JP16059386 A JP 16059386A JP 16059386 A JP16059386 A JP 16059386A JP H0557354 B2 JPH0557354 B2 JP H0557354B2
Authority
JP
Japan
Prior art keywords
gas
wall
wall surface
isolation gas
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16059386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318078A (ja
Inventor
Satoru Kishimoto
Katsumi Takami
Yukio Murakawa
Kazuo Taniguchi
Katsumi Ooyama
Hitoshi Hikima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP16059386A priority Critical patent/JPS6318078A/ja
Publication of JPS6318078A publication Critical patent/JPS6318078A/ja
Publication of JPH0557354B2 publication Critical patent/JPH0557354B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP16059386A 1986-07-08 1986-07-08 Ｃｖｄ薄膜形成装置 Granted JPS6318078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16059386A JPS6318078A (ja) 1986-07-08 1986-07-08 Ｃｖｄ薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16059386A JPS6318078A (ja) 1986-07-08 1986-07-08 Ｃｖｄ薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS6318078A JPS6318078A (ja) 1988-01-25
JPH0557354B2 true JPH0557354B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-23

Family

ID=15718305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16059386A Granted JPS6318078A (ja) 1986-07-08 1986-07-08 Ｃｖｄ薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS6318078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224222A (ja) * 1988-11-21 1990-09-06 Fuji Electric Co Ltd 気相成長装置

Also Published As

Publication number Publication date
JPS6318078A (ja) 1988-01-25

Similar Documents

Publication Publication Date Title
TWI589359B (zh) Gas shower, chemical vapor deposition apparatus and method
EP0637058B1 (en) Method of supplying reactant gas to a substrate processing apparatus
KR940009945B1 (ko) 화학기상 성장장치
WO1992005577A1 (fr) Procede et appareil pour former par croissance des cristaux de composes semi-conducteurs
JPH09246192A (ja) 薄膜気相成長装置
JPS615515A (ja) 化学気相成長装置
JPS62263629A (ja) 気相成長装置
JPH0557354B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US6994887B2 (en) Chemical vapor deposition apparatus and film deposition method
JP2991830B2 (ja) 化学気相成長装置およびそれを用いた化学気相成長方法
JPS6357775A (ja) Ｃｖｄ薄膜形成装置
JPS62158867A (ja) Ｃｖｄ薄膜形成装置
JPS62238365A (ja) Ｃｖｄ薄膜形成装置
JP2943407B2 (ja) 化学気相成長装置
JPH0532470B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6376879A (ja) Ｃｖｄ薄膜形成装置
JPS63164222A (ja) Ｃｖｄ装置用ガスヘツド
JP2809817B2 (ja) 気相成長法による薄膜の形成方法
JPS63216973A (ja) 気相反応装置における反応ガス送入方式
JPS6376334A (ja) Ｃｖｄ薄膜形成装置
JPS62158877A (ja) Ｃｖｄ薄膜形成装置
JPS62243771A (ja) Ｃｖｄ薄膜形成装置
JPS62120481A (ja) 連続ｃｖｄ薄膜形成装置
JPS6240720A (ja) 気相エピタキシヤル成長装置
JPS62238366A (ja) Ｃｖｄ薄膜形成装置