JPH0555969B2 - - Google Patents
Info
- Publication number
- JPH0555969B2 JPH0555969B2 JP62200002A JP20000287A JPH0555969B2 JP H0555969 B2 JPH0555969 B2 JP H0555969B2 JP 62200002 A JP62200002 A JP 62200002A JP 20000287 A JP20000287 A JP 20000287A JP H0555969 B2 JPH0555969 B2 JP H0555969B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- alloy
- lmis
- ion
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000521 B alloy Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000006023 eutectic alloy Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200002A JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
| US07/227,255 US4892752A (en) | 1987-08-12 | 1988-08-02 | Method of ion implantation |
| DE3855897T DE3855897T2 (de) | 1987-08-12 | 1988-08-11 | Verfahren zur Ionenimplantation |
| EP88307442A EP0303486B1 (en) | 1987-08-12 | 1988-08-11 | Method of ion implantation |
| KR1019880010320A KR920005348B1 (ko) | 1987-08-12 | 1988-08-12 | 이온주입방법 |
| US07/371,976 US4946706A (en) | 1987-08-12 | 1989-06-27 | Method of ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200002A JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6445045A JPS6445045A (en) | 1989-02-17 |
| JPH0555969B2 true JPH0555969B2 (enExample) | 1993-08-18 |
Family
ID=16417162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200002A Granted JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445045A (enExample) |
-
1987
- 1987-08-12 JP JP62200002A patent/JPS6445045A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6445045A (en) | 1989-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |