JPH0553872B2 - - Google Patents

Info

Publication number
JPH0553872B2
JPH0553872B2 JP60243663A JP24366385A JPH0553872B2 JP H0553872 B2 JPH0553872 B2 JP H0553872B2 JP 60243663 A JP60243663 A JP 60243663A JP 24366385 A JP24366385 A JP 24366385A JP H0553872 B2 JPH0553872 B2 JP H0553872B2
Authority
JP
Japan
Prior art keywords
lid
vacuum chamber
aluminum
main body
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60243663A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62103380A (ja
Inventor
Yutaka Kato
Eizo Isoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altemira Co Ltd
Original Assignee
Showa Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP24366385A priority Critical patent/JPS62103380A/ja
Publication of JPS62103380A publication Critical patent/JPS62103380A/ja
Publication of JPH0553872B2 publication Critical patent/JPH0553872B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP24366385A 1985-10-29 1985-10-29 Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法 Granted JPS62103380A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24366385A JPS62103380A (ja) 1985-10-29 1985-10-29 Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24366385A JPS62103380A (ja) 1985-10-29 1985-10-29 Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法

Publications (2)

Publication Number Publication Date
JPS62103380A JPS62103380A (ja) 1987-05-13
JPH0553872B2 true JPH0553872B2 (fr) 1993-08-11

Family

ID=17107150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24366385A Granted JPS62103380A (ja) 1985-10-29 1985-10-29 Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法

Country Status (1)

Country Link
JP (1) JPS62103380A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006002987T5 (de) 2005-11-17 2008-10-02 Kabushiki Kaisha Kobe Seiko Sho Aluminiumlegierungselement mit hervorragender Korrosionsbeständigkeit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6383964B1 (en) 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
JP4512603B2 (ja) * 2007-02-26 2010-07-28 トーカロ株式会社 耐ハロゲンガス性の半導体加工装置用部材

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021382A (ja) * 1983-07-15 1985-02-02 Canon Inc プラズマcvd装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021382A (ja) * 1983-07-15 1985-02-02 Canon Inc プラズマcvd装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006002987T5 (de) 2005-11-17 2008-10-02 Kabushiki Kaisha Kobe Seiko Sho Aluminiumlegierungselement mit hervorragender Korrosionsbeständigkeit

Also Published As

Publication number Publication date
JPS62103380A (ja) 1987-05-13

Similar Documents

Publication Publication Date Title
CN1188546C (zh) 在具有金属部件的反应器中处理半导体时减小金属污染物的方法
EP2199267B1 (fr) Structure en carbure de silicium
US4992299A (en) Deposition of silicon nitride films from azidosilane sources
WO2004079031A2 (fr) Procede de depot chimique en phase vapeur de silicium sur des substrat pour utilisation dans des environnements corrosifs et sous vide
EP0711846A1 (fr) Nitrure de titane déposé par CVD
EP0529593B1 (fr) Madrin en graphite revêtu de carbone vitreux utile pour la fabrication de silicium polycristallin
JPH0524230B2 (fr)
JPH0553872B2 (fr)
JPH0553871B2 (fr)
US5275844A (en) Process for forming a crack-free boron nitride coating on a carbon structure
Morancho et al. Ti (C, N, H) coatings on glass substrates prepared by chemical vapour deposition using tris (2, 2′-bipyridine) titanium (0)
WO1992002662A2 (fr) Procede de formation de nitrure de bore pyrolytique sans fissure sur une structure en carbone, et article
US6054187A (en) Method of manufacturing a boron carbide film on a substrate
Wilmsen et al. Interface formation of deposited insulator layers on GaAs and InP
US6524401B2 (en) Process for nitriding an aluminum-containing substrate
JPH0679444B2 (ja) 電気皮膜
JPH0553870B2 (fr)
US1224339A (en) Vapor treatment of metals.
JP4421180B2 (ja) 表面処理方法及び真空容器類
US6468366B1 (en) Surface nitriding member
Stroud et al. Some preliminary studies of the structure of ion bombarded thin films
JP2002518286A (ja) 金属内容物が減少されたシリコン結晶を調整する処理及び装置
JPH0817746A (ja) ヒータ
JPH01129972A (ja) シリコン窒化酸化膜の形成方法
JP2001106585A (ja) 炭素材料の耐高温酸化処理方法