JPH0552678B2 - - Google Patents
Info
- Publication number
- JPH0552678B2 JPH0552678B2 JP4365684A JP4365684A JPH0552678B2 JP H0552678 B2 JPH0552678 B2 JP H0552678B2 JP 4365684 A JP4365684 A JP 4365684A JP 4365684 A JP4365684 A JP 4365684A JP H0552678 B2 JPH0552678 B2 JP H0552678B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- semiconductor
- refractive index
- layer
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4365684A JPS60187084A (ja) | 1984-03-07 | 1984-03-07 | 埋め込み構造半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4365684A JPS60187084A (ja) | 1984-03-07 | 1984-03-07 | 埋め込み構造半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60187084A JPS60187084A (ja) | 1985-09-24 |
| JPH0552678B2 true JPH0552678B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-06 |
Family
ID=12669901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4365684A Granted JPS60187084A (ja) | 1984-03-07 | 1984-03-07 | 埋め込み構造半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60187084A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1984
- 1984-03-07 JP JP4365684A patent/JPS60187084A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60187084A (ja) | 1985-09-24 |