JPH05505067A - 3次元で集積回路を相互接続するための方法及び装置 - Google Patents
3次元で集積回路を相互接続するための方法及び装置Info
- Publication number
- JPH05505067A JPH05505067A JP4502113A JP50211392A JPH05505067A JP H05505067 A JPH05505067 A JP H05505067A JP 4502113 A JP4502113 A JP 4502113A JP 50211392 A JP50211392 A JP 50211392A JP H05505067 A JPH05505067 A JP H05505067A
- Authority
- JP
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- Prior art keywords
- laminate
- conductor
- electrical connection
- plates
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000004020 conductor Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (12)
- 1.各々少なくとも1つの集積回路を含み、接続コンタクト(PC)を備える、 半導体プレート(P)を相互接続する方法であって、 上記プレートのコンタクト(PC)の各々に導体(F)を接続し(62)、 上記プレートを積み重ね、そのプレートと上記導体(F)を絶縁材料(D)で一 体化して、該導体が上記積層体の面と同一平面になるようにし(62)、 レーザによって該積層体の面上の導体(F)間の電気接続線を形成し、それら電 気接続線の内の少なくとも一部の接続線は上記積層体の少なくとも2つの面上に 位置するようにすることを連続して備えることを特徴とする方法。
- 2.上記電気接続線を形成する段階が、積層体の全て面上に導体層(M)を堆積 すことからなる第1の副段階(63)と、 上記導体(F)に一緒に接続する電気接続線(C)を形成するように導体層をレ ーザエッチンダすることからなる第2の副段階(64)と の2つの副段階を備えることを特徴とする請求項1に記載の方法。
- 3.上記電気接続線を形成する段階は、有機金属蒸気内に上記積層体を配置し、 次に、レーザによって該接続線を形成すべき表面を局部的に加熱し、その上に金 属堆積を生じさせることからなることを特徴とする請求項1に記載の方法。
- 4.上記電気接続線を形成する段階の間、さらに、上記積層体を外部回路に接続 するためのいわゆる積層体コンタクト(PE)を形成し、該電気接続線で上記導 体(F)及び積層体コンタクト(PE)を接続することを特徴とする請求項1〜 3のいずれか1項に記載の方法。
- 5.積み重ねる前に、上記プレートを絶縁性保護材料によって被覆して上記プレ ートの各々を保護する段階を備えることを特徴とする請求項1〜4のいずれか1 項に記載の方法。
- 6.上記電気接続線を形成する段階は、上記導体Fが同一平面にある部分で上記 導体に溝を形成し、上記導体Fの端部を露出することからなる第1の副段階(7 3)と、上記積層体の全体に導体層を堆積する第2の副段階(74)と、上記積 層体の平坦な面から上記導体層を除去して、上記溝内にだけ該導体層を残す第3 の副段階(75)との副段階を備えることを特徴とする請求項1に記載の方法。
- 7.エッチング段階後、連続して、少なくとも電気接続線上に絶縁層を積み重ね る段階と、第2のレベルによって電気接続線を形成する第2の段階とを備えるこ とを特徴とする請求項1〜6のいずれか1項に記載の方法。
- 8.各々少なくとも1つの集積回路を含み、接続コンタクト(PC)を備える、 半導体プレート(P)を相互接続する装置であって、上記プレート(P)が絶縁 材料(D)によって互いに一体化されて積層体が形成され、上記プレートの上記 接続コンタクト(PC)は導体(F)によって上記積層体の少なくともいくつか の面に電気的に接続されており、上記導体(F)の電気接続は上記積層体上に形 成された接続線(C)によって実現されており、これらの接続線の少なくともい くつかは該積層体の少なくとも2つの面上に位置されていることを特徴とする装 置。
- 9.ベース(B)と呼ばれる上記積層体の少なくとも1つの面は、導体(F)を 備えず、該積層体は、外部回路に上記積層体を接続するために、上記ベースの近 傍のその表面上に形成された積層体コンタクト(PE)を備え、上記接続線(C )によって上記導体とその積層体コンタクトとの接続が確保されていることを特 徴とする請求項8に記載の装置。
- 10.上記導体(F)は、ワイヤであることを特徴とする請求項8または9に記 載の装置。
- 11.上記導体(F)は、ストリップであることを特徴とする請求項8または9 に記載の装置。
- 12.上記導体(F)は、個々に絶縁されていることを特徴とする請求項10ま たは11に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9015473A FR2670323B1 (fr) | 1990-12-11 | 1990-12-11 | Procede et dispositif d'interconnexion de circuits integres en trois dimensions. |
FR90/15473 | 1990-12-11 | ||
PCT/FR1991/000978 WO1992010853A1 (fr) | 1990-12-11 | 1991-12-06 | Procede et dispositif d'interconnexion de circuits integres en trois dimensions |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05505067A true JPH05505067A (ja) | 1993-07-29 |
JP3415621B2 JP3415621B2 (ja) | 2003-06-09 |
Family
ID=9403101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50211392A Expired - Lifetime JP3415621B2 (ja) | 1990-12-11 | 1991-12-06 | 3次元で集積回路を相互接続するための方法及び装置 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0490739B1 (ja) |
JP (1) | JP3415621B2 (ja) |
KR (1) | KR920704344A (ja) |
DE (1) | DE69126599T2 (ja) |
ES (1) | ES2104681T3 (ja) |
FR (1) | FR2670323B1 (ja) |
WO (1) | WO1992010853A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029370A (ja) * | 2009-07-24 | 2011-02-10 | Shinko Electric Ind Co Ltd | 積層型半導体装置及びその製造方法 |
DE102016104626A1 (de) | 2015-03-16 | 2016-09-22 | Jtekt Corporation | Spindelvorrichtung |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5847448A (en) * | 1990-12-11 | 1998-12-08 | Thomson-Csf | Method and device for interconnecting integrated circuits in three dimensions |
FR2688629A1 (fr) * | 1992-03-10 | 1993-09-17 | Thomson Csf | Procede et dispositif d'encapsulation en trois dimensions de pastilles semi-conductrices. |
FR2688630B1 (fr) * | 1992-03-13 | 2001-08-10 | Thomson Csf | Procede et dispositif d'interconnexion en trois dimensions de boitiers de composants electroniques. |
AU2554192A (en) * | 1992-09-14 | 1994-04-12 | Pierre Badehi | Methods and apparatus for producing integrated circuit devices |
FR2696871B1 (fr) * | 1992-10-13 | 1994-11-18 | Thomson Csf | Procédé d'interconnexion 3D de boîtiers de composants électroniques, et composants 3D en résultant. |
IL106892A0 (en) * | 1993-09-02 | 1993-12-28 | Pierre Badehi | Methods and apparatus for producing integrated circuit devices |
IL108359A (en) * | 1994-01-17 | 2001-04-30 | Shellcase Ltd | Method and device for creating integrated circular devices |
US6124633A (en) * | 1994-06-23 | 2000-09-26 | Cubic Memory | Vertical interconnect process for silicon segments with thermally conductive epoxy preform |
US6486528B1 (en) | 1994-06-23 | 2002-11-26 | Vertical Circuits, Inc. | Silicon segment programming apparatus and three terminal fuse configuration |
US5891761A (en) * | 1994-06-23 | 1999-04-06 | Cubic Memory, Inc. | Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform |
US6255726B1 (en) | 1994-06-23 | 2001-07-03 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments with dielectric isolation |
US6080596A (en) * | 1994-06-23 | 2000-06-27 | Cubic Memory Inc. | Method for forming vertical interconnect process for silicon segments with dielectric isolation |
US5675180A (en) * | 1994-06-23 | 1997-10-07 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments |
US6117707A (en) * | 1994-07-13 | 2000-09-12 | Shellcase Ltd. | Methods of producing integrated circuit devices |
US6624505B2 (en) | 1998-02-06 | 2003-09-23 | Shellcase, Ltd. | Packaged integrated circuits and methods of producing thereof |
IL123207A0 (en) | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
FR2785452B1 (fr) * | 1998-11-03 | 2003-06-13 | Tda Armements Sas | Procede de realisation de recepteurs d'ondes radioelectriques par interconnexion de circuits integres en trois dimensions |
FR2802706B1 (fr) | 1999-12-15 | 2002-03-01 | 3D Plus Sa | Procede et dispositif d'interconnexion en trois dimensions de composants electroniques |
JP2004534375A (ja) | 2000-12-21 | 2004-11-11 | シェルケース リミティド | パケージ集積回路およびその製造方法 |
US7033664B2 (en) | 2002-10-22 | 2006-04-25 | Tessera Technologies Hungary Kft | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US7566853B2 (en) | 2005-08-12 | 2009-07-28 | Tessera, Inc. | Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture |
WO2010026527A2 (en) | 2008-09-08 | 2010-03-11 | Koninklijke Philips Electronics N.V. | Radiation detector with a stack of converter plates and interconnect layers |
FR2940521B1 (fr) | 2008-12-19 | 2011-11-11 | 3D Plus | Procede de fabrication collective de modules electroniques pour montage en surface |
EP2202789A1 (en) * | 2008-12-24 | 2010-06-30 | Nxp B.V. | Stack of molded integrated circuit dies with side surface contact tracks |
RU2460171C2 (ru) * | 2010-08-23 | 2012-08-27 | Федеральное государственное унитарное предприятие Омский научно-исследовательский институт приборостроения (ФГУП ОНИИП) | Объемный модуль для радиоэлектронной аппаратуры |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3746934A (en) * | 1971-05-06 | 1973-07-17 | Siemens Ag | Stack arrangement of semiconductor chips |
DE2919998A1 (de) * | 1979-05-17 | 1980-11-27 | Siemens Ag | Befestigen der anschlussdraehte von halbleitersystemen auf den traegerelementen |
FR2645681B1 (fr) * | 1989-04-07 | 1994-04-08 | Thomson Csf | Dispositif d'interconnexion verticale de pastilles de circuits integres et son procede de fabrication |
-
1990
- 1990-12-11 FR FR9015473A patent/FR2670323B1/fr not_active Expired - Fee Related
-
1991
- 1991-12-06 ES ES91403307T patent/ES2104681T3/es not_active Expired - Lifetime
- 1991-12-06 KR KR1019920701892A patent/KR920704344A/ko active IP Right Grant
- 1991-12-06 DE DE69126599T patent/DE69126599T2/de not_active Expired - Lifetime
- 1991-12-06 EP EP91403307A patent/EP0490739B1/fr not_active Expired - Lifetime
- 1991-12-06 WO PCT/FR1991/000978 patent/WO1992010853A1/fr unknown
- 1991-12-06 JP JP50211392A patent/JP3415621B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029370A (ja) * | 2009-07-24 | 2011-02-10 | Shinko Electric Ind Co Ltd | 積層型半導体装置及びその製造方法 |
DE102016104626A1 (de) | 2015-03-16 | 2016-09-22 | Jtekt Corporation | Spindelvorrichtung |
Also Published As
Publication number | Publication date |
---|---|
EP0490739B1 (fr) | 1997-06-18 |
DE69126599D1 (de) | 1997-07-24 |
FR2670323B1 (fr) | 1997-12-12 |
WO1992010853A1 (fr) | 1992-06-25 |
FR2670323A1 (fr) | 1992-06-12 |
DE69126599T2 (de) | 1997-10-02 |
KR920704344A (ko) | 1992-12-19 |
ES2104681T3 (es) | 1997-10-16 |
JP3415621B2 (ja) | 2003-06-09 |
EP0490739A1 (fr) | 1992-06-17 |
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