JPH0548005B2 - - Google Patents

Info

Publication number
JPH0548005B2
JPH0548005B2 JP56064299A JP6429981A JPH0548005B2 JP H0548005 B2 JPH0548005 B2 JP H0548005B2 JP 56064299 A JP56064299 A JP 56064299A JP 6429981 A JP6429981 A JP 6429981A JP H0548005 B2 JPH0548005 B2 JP H0548005B2
Authority
JP
Japan
Prior art keywords
transistor
high frequency
gate electrode
coupled
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56064299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS573404A (en
Inventor
Jei Riigan Robaato
O Hoogusujaa Hooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc
Publication of JPS573404A publication Critical patent/JPS573404A/ja
Publication of JPH0548005B2 publication Critical patent/JPH0548005B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H10W44/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W44/226—
    • H10W72/07554—
    • H10W72/5445—
    • H10W72/547—
    • H10W72/5473—
    • H10W72/5475—
    • H10W72/5524—
    • H10W72/5525—
    • H10W90/756—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP6429981A 1980-05-01 1981-04-30 High voltage high frequency amplifier Granted JPS573404A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/145,519 US4342967A (en) 1980-05-01 1980-05-01 High voltage, high frequency amplifier

Publications (2)

Publication Number Publication Date
JPS573404A JPS573404A (en) 1982-01-08
JPH0548005B2 true JPH0548005B2 (enExample) 1993-07-20

Family

ID=22513476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6429981A Granted JPS573404A (en) 1980-05-01 1981-04-30 High voltage high frequency amplifier

Country Status (6)

Country Link
US (1) US4342967A (enExample)
JP (1) JPS573404A (enExample)
CA (1) CA1161911A (enExample)
DE (1) DE3117009A1 (enExample)
FR (1) FR2481863B1 (enExample)
GB (1) GB2075298B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590437A (en) * 1984-04-27 1986-05-20 Gte Laboratories Incorporated High frequency amplifier
US4590436A (en) * 1984-04-27 1986-05-20 Gte Laboratories Incorporated High voltage, high frequency amplifier circuit
US4591803A (en) * 1984-05-29 1986-05-27 At&T Bell Laboratories Linear FET power amplifier
US4591809A (en) * 1984-12-24 1986-05-27 Gte Laboratories Incorporated High frequency power source
US4602221A (en) * 1984-12-24 1986-07-22 Gte Laboratories Incorporated High frequency energy source
US4667144A (en) * 1986-06-03 1987-05-19 The United States Of America As Represented By The Secretary Of The Air Force High frequency, high voltage MOSFET isolation amplifier
US4736117A (en) * 1986-11-14 1988-04-05 National Semiconductor Corporation VDS clamp for limiting impact ionization in high density CMOS devices
US4841253A (en) * 1987-04-15 1989-06-20 Harris Corporation Multiple spiral inductors for DC biasing of an amplifier
JPS63274409A (ja) * 1987-05-06 1988-11-11 Sanyo Chem Ind Ltd 有機性汚泥の脱水法
US4820999A (en) * 1987-09-11 1989-04-11 The Aerospace Corporation Method and apparatus for amplifying signals
US4835485A (en) * 1988-03-25 1989-05-30 General Electric Company Unconditionally-stable ultra low noise R.F. preamplifier
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor
US4965526A (en) * 1989-07-14 1990-10-23 Motorola Inc. Hybrid amplifier
US5038113A (en) * 1989-12-01 1991-08-06 General Electric Company Nonlinearity generator using FET source-to-drain conductive path
US5061903A (en) * 1990-02-27 1991-10-29 Grumman Aerospace Corporation High voltage modified cascode circuit
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
FR2683686A1 (fr) * 1991-11-07 1993-05-14 Europ Agence Spatiale Amplificateur de puissance micro-ondes.
RU94017633A (ru) * 1994-05-12 1996-04-20 С.Г. Тихомиров Усилитель высокой частоты с каскадным суммированием мощностей
US5483191A (en) * 1994-09-23 1996-01-09 At&T Corp. Apparatus for biasing a FET with a single voltage supply
AT405002B (de) * 1995-08-01 1999-04-26 Werner Dipl Ing Dr Pritzl Vorrichtung zur verstärkung von signalen hoher leistung im hochvrequenz- und mikrowellenbereich
KR0157206B1 (ko) * 1996-03-28 1999-02-18 김광호 저잡음 증폭기
JPH10322141A (ja) * 1997-05-20 1998-12-04 Matsushita Electric Ind Co Ltd 高周波電力増幅器およびそれを用いた無線通信装置
US6121842A (en) * 1997-05-21 2000-09-19 Raytheon Company Cascode amplifier
US6020636A (en) * 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
JP3668610B2 (ja) * 1998-04-10 2005-07-06 太陽誘電株式会社 高周波電力増幅回路
DE10036127B4 (de) * 2000-07-25 2007-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Versorgungsspannungsentkopplung für HF-Verstärkerschaltungen
JP2008010667A (ja) * 2006-06-29 2008-01-17 Mitsumi Electric Co Ltd 半導体装置
US20080048785A1 (en) * 2006-08-22 2008-02-28 Mokhtar Fuad Bin Haji Low-noise amplifier
US8466747B1 (en) * 2011-04-08 2013-06-18 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8963645B1 (en) * 2011-04-08 2015-02-24 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8854144B2 (en) 2012-09-14 2014-10-07 General Atomics High voltage amplifiers and methods
US9219450B1 (en) * 2014-01-07 2015-12-22 Lockheed Martin Corporation High linearity low noise amplifier
US9520836B1 (en) * 2015-08-13 2016-12-13 Raytheon Company Multi-stage amplifier with cascode stage and DC bias regulator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2943267A (en) * 1955-10-31 1960-06-28 Sperry Rand Corp Series-energized transistor amplifier
NL112693C (enExample) * 1957-08-02
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier
US3716730A (en) * 1971-04-19 1973-02-13 Motorola Inc Intermodulation rejection capabilities of field-effect transistor radio frequency amplifiers and mixers
JPS4828366U (enExample) * 1971-08-12 1973-04-06
JPS52143739A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Amplifier circuit
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
JPS6010106Y2 (ja) * 1978-09-27 1985-04-08 八木アンテナ株式会社 カスケ−ド増幅器

Also Published As

Publication number Publication date
CA1161911A (en) 1984-02-07
FR2481863B1 (fr) 1988-05-27
DE3117009C2 (enExample) 1992-09-10
GB2075298B (en) 1984-03-07
GB2075298A (en) 1981-11-11
DE3117009A1 (de) 1982-02-18
JPS573404A (en) 1982-01-08
US4342967A (en) 1982-08-03
FR2481863A1 (fr) 1981-11-06

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