JPH0547980B2 - - Google Patents

Info

Publication number
JPH0547980B2
JPH0547980B2 JP56128452A JP12845281A JPH0547980B2 JP H0547980 B2 JPH0547980 B2 JP H0547980B2 JP 56128452 A JP56128452 A JP 56128452A JP 12845281 A JP12845281 A JP 12845281A JP H0547980 B2 JPH0547980 B2 JP H0547980B2
Authority
JP
Japan
Prior art keywords
semiconductor device
insulating film
manufacturing
type semiconductor
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56128452A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5830161A (ja
Inventor
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56128452A priority Critical patent/JPS5830161A/ja
Publication of JPS5830161A publication Critical patent/JPS5830161A/ja
Publication of JPH0547980B2 publication Critical patent/JPH0547980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP56128452A 1981-08-17 1981-08-17 Ｍｉｓ型半導体装置の製造方法 Granted JPS5830161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56128452A JPS5830161A (ja) 1981-08-17 1981-08-17 Ｍｉｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56128452A JPS5830161A (ja) 1981-08-17 1981-08-17 Ｍｉｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5830161A JPS5830161A (ja) 1983-02-22
JPH0547980B2 true JPH0547980B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=14985053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56128452A Granted JPS5830161A (ja) 1981-08-17 1981-08-17 Ｍｉｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5830161A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59145572A (ja) * 1983-02-09 1984-08-21 Matsushita Electronics Corp 半導体装置およびその製造方法
JP2574816B2 (ja) * 1987-10-27 1997-01-22 住友ゴム工業 株式会社 安全タイヤ
JP2765976B2 (ja) * 1989-08-18 1998-06-18 沖電気工業株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain

Also Published As

Publication number Publication date
JPS5830161A (ja) 1983-02-22

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