JPH0542827B2 - - Google Patents

Info

Publication number
JPH0542827B2
JPH0542827B2 JP57141500A JP14150082A JPH0542827B2 JP H0542827 B2 JPH0542827 B2 JP H0542827B2 JP 57141500 A JP57141500 A JP 57141500A JP 14150082 A JP14150082 A JP 14150082A JP H0542827 B2 JPH0542827 B2 JP H0542827B2
Authority
JP
Japan
Prior art keywords
semiconductor
single crystal
emitter
light
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57141500A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5931057A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57141500A priority Critical patent/JPS5931057A/ja
Priority to US06/521,546 priority patent/US4633287A/en
Publication of JPS5931057A publication Critical patent/JPS5931057A/ja
Publication of JPH0542827B2 publication Critical patent/JPH0542827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57141500A 1982-08-09 1982-08-13 半導体装置 Granted JPS5931057A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57141500A JPS5931057A (ja) 1982-08-13 1982-08-13 半導体装置
US06/521,546 US4633287A (en) 1982-08-09 1983-08-09 Semiconductor photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141500A JPS5931057A (ja) 1982-08-13 1982-08-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS5931057A JPS5931057A (ja) 1984-02-18
JPH0542827B2 true JPH0542827B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=15293386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141500A Granted JPS5931057A (ja) 1982-08-09 1982-08-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS5931057A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8403005A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Werkwijze voor het vervaardigen van een bipolaire heterojunctietransistor en bipolaire heterojunctie-transistor vervaardigd volgens de werkwijze.

Also Published As

Publication number Publication date
JPS5931057A (ja) 1984-02-18

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