JPH0542134B2 - - Google Patents

Info

Publication number
JPH0542134B2
JPH0542134B2 JP56077538A JP7753881A JPH0542134B2 JP H0542134 B2 JPH0542134 B2 JP H0542134B2 JP 56077538 A JP56077538 A JP 56077538A JP 7753881 A JP7753881 A JP 7753881A JP H0542134 B2 JPH0542134 B2 JP H0542134B2
Authority
JP
Japan
Prior art keywords
main surface
substrate
gettering
mask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56077538A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57193039A (en
Inventor
Kazuyoshi Kobayashi
Kyoshi Ujita
Tokuro Soma
Naoki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP7753881A priority Critical patent/JPS57193039A/ja
Publication of JPS57193039A publication Critical patent/JPS57193039A/ja
Publication of JPH0542134B2 publication Critical patent/JPH0542134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP7753881A 1981-05-22 1981-05-22 Manufacture of semiconductor device Granted JPS57193039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7753881A JPS57193039A (en) 1981-05-22 1981-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7753881A JPS57193039A (en) 1981-05-22 1981-05-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57193039A JPS57193039A (en) 1982-11-27
JPH0542134B2 true JPH0542134B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-06-25

Family

ID=13636765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7753881A Granted JPS57193039A (en) 1981-05-22 1981-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57193039A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783123B2 (ja) * 1993-05-28 1998-08-06 日本電気株式会社 半導体基板およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130979A (en) * 1977-04-20 1978-11-15 Nec Corp Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS57193039A (en) 1982-11-27

Similar Documents

Publication Publication Date Title
US4002501A (en) High speed, high yield CMOS/SOS process
KR940008728B1 (ko) 반도체 장치 및 그 제조방법
US5028564A (en) Edge doping processes for mesa structures in SOS and SOI devices
JPH0572107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4030952A (en) Method of MOS circuit fabrication
KR100190363B1 (ko) 반도체 소자의 소자분리 방법
JPS61208277A (ja) 高効率光検出器およびその製造方法
US4894701A (en) Semiconductor device detector and method of forming same
US4371890A (en) Tapering of oxidized polysilicon electrodes
JPH0542134B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0210730A (ja) 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造
JPH10125688A (ja) 半導体装置の製造方法
JPS5923468B2 (ja) 半導体装置の製造方法
JPH043419A (ja) 半導体装置の製造方法
JPS63228732A (ja) 半導体装置の製造方法
JPH079930B2 (ja) 半導体装置の製造方法
JPS6146964B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR950013791B1 (ko) 매립 형태의 콘택 위에 게이트전극 형성방법
JPH0330293B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61154132A (ja) 半導体装置の製造方法
JPS5929438A (ja) 半導体装置の製造方法
JPS5856261B2 (ja) 半導体集積回路の製造方法
JPS63170950A (ja) 半導体装置の製造方法
JPH01140654A (ja) トレンチキャパシタを備えた半導体集積回路装置
JPS59975B2 (ja) 半導体装置の製造方法