JPH0539635Y2 - - Google Patents
Info
- Publication number
- JPH0539635Y2 JPH0539635Y2 JP1986041711U JP4171186U JPH0539635Y2 JP H0539635 Y2 JPH0539635 Y2 JP H0539635Y2 JP 1986041711 U JP1986041711 U JP 1986041711U JP 4171186 U JP4171186 U JP 4171186U JP H0539635 Y2 JPH0539635 Y2 JP H0539635Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- cooling
- heat
- cooling mechanism
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000498 cooling water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Description
【考案の詳細な説明】
〔概要〕
本考案の半導体素子用冷却装置は、半導体素子
と冷却機構間に介在する伝熱板が、ハンダ付け等
の手段によつて半導体素子と一体化されるととも
に、冷却機構側に付設されたフランジを介して冷
却機構と着脱可能に構成されている。[Detailed Description of the Invention] [Summary] The semiconductor device cooling device of the present invention has a heat transfer plate interposed between the semiconductor device and the cooling mechanism that is integrated with the semiconductor device by means such as soldering. , is configured to be detachable from the cooling mechanism via a flange attached to the cooling mechanism side.
このため、半導体素子の冷却効率が著しく向上
して、該半導体素子の高密度実装が可能となる。 Therefore, the cooling efficiency of the semiconductor elements is significantly improved, and the semiconductor elements can be mounted in high density.
本考案は大型電算機等に装備される半導体素子
用冷却装置の改良に関するものである。
The present invention relates to an improvement of a cooling device for semiconductor devices installed in large-sized computers and the like.
第２図ａ，ｂは従来の半導体素子用冷却装置の
構成例を示す要部側断面図と部分拡大図である。
FIGS. 2a and 2b are a side sectional view and a partially enlarged view of a main part showing a configuration example of a conventional semiconductor device cooling device.
第２図ａに示すように、従来の半導体素子用冷
却装置は、伝熱板５およびベローズ等の可撓性弾
性構造体１を具備して成る冷却機構１０と、基板
２０上に実装された半導体素子３と前記伝熱板５
とを結合する熱伝導性弾性体２とによつて構成さ
れ、半導体素子３と熱伝導性弾性体２、そして熱
伝導性弾性体２と伝熱板５は、可撓性弾性構造体
１の矢印方向に押圧力により互いに密接させられ
る構成になつている。そして半導体素子３は、半
導体素子３→熱伝導性弾性体２→伝熱板５→冷却
水８という放熱経路を経て冷却される。 As shown in FIG. 2a, the conventional semiconductor device cooling device includes a cooling mechanism 10 comprising a heat exchanger plate 5 and a flexible elastic structure 1 such as a bellows, and a cooling mechanism 10 mounted on a substrate 20. Semiconductor element 3 and the heat transfer plate 5
The semiconductor element 3 and the thermally conductive elastic body 2, and the thermally conductive elastic body 2 and the heat transfer plate 5 are configured by a thermally conductive elastic body 2 that connects the flexible elastic structure 1. The structure is such that they are brought into close contact with each other by pressing force in the direction of the arrow. The semiconductor element 3 is cooled through a heat radiation path of the semiconductor element 3 → thermally conductive elastic body 2 → heat exchanger plate 5 → cooling water 8.
しかしながら、上記従来の半導体素子冷却装置
の場合は、第２図ｂに示すように、半導体素子３
と伝熱板５間の熱伝導が、熱伝導性弾性体２を介
して行われる構成になつているため、熱伝導性弾
性体２の表面の凹凸の影響で半導体素子３と熱伝
導性弾性体２間にエアギヤツプＧが生じる。そし
て該エアギヤツプＧが半導体素子３と伝熱板５間
の熱伝導率を劣化させる一大要因になつている。
However, in the case of the above conventional semiconductor device cooling device, as shown in FIG. 2b, the semiconductor device 3
Since the structure is such that heat conduction between the heat transfer plate 5 and the heat transfer plate 5 is performed via the heat conductive elastic body 2, the unevenness of the surface of the heat conductive elastic body 2 causes the semiconductor element 3 and the heat conductive elastic body to An air gap G is created between the two bodies. The air gap G is a major factor in deteriorating the thermal conductivity between the semiconductor element 3 and the heat exchanger plate 5.
上記現象を防止するために、熱伝導性弾性体２
の表裏両面にシリコングリース等を塗布して、エ
アギヤツプＧを該グリースで埋めるといつた手段
も講じられてはいるが、もともと熱伝導性弾性体
２自体がシリコン系の合成ゴムで構成されている
こともあつて、従来構造で熱伝導性の向上は至難
とされていた。 In order to prevent the above phenomenon, the thermally conductive elastic body 2
Although measures have been taken such as applying silicone grease or the like to both the front and back sides of the air gap G and filling the air gap G with the grease, the thermally conductive elastic body 2 itself was originally composed of silicone-based synthetic rubber. For this reason, it was considered extremely difficult to improve thermal conductivity with conventional structures.
本考案は第１図の実施例に示すように、伝熱板
５と半導体素子３とを、ハンダ４等の低融点金属
で接合して一体構造にするとともに、該伝熱板５
と冷却機構１０とが、可撓性弾性構造体１の先端
部に付設したフランジ７を介して着脱可能に構成
されている。
As shown in the embodiment shown in FIG.
and the cooling mechanism 10 are configured to be detachable via a flange 7 attached to the tip of the flexible elastic structure 1.
このように構成されたものにおいては、半導体
素子３と伝熱板５間のエアギヤツプＧが存在しな
くなると同時に、半導体素子３と冷却機構１０と
の着脱が容易化されるため、半導体素子の冷却効
率と冷却機構の実装作業効率とが大幅に向上す
る。
In the structure configured in this way, the air gap G between the semiconductor element 3 and the heat transfer plate 5 disappears, and at the same time, the semiconductor element 3 and the cooling mechanism 10 can be easily attached and detached, so that the cooling of the semiconductor element is improved. Efficiency and cooling mechanism mounting work efficiency are greatly improved.
以下実施例図に基づいて本考案を詳細に説明す
る。
The present invention will be explained in detail below based on embodiment figures.
第１図は本考案による半導体素子用冷却装置の
一実施例を示す要部側断面図である。 FIG. 1 is a sectional side view of essential parts of an embodiment of a semiconductor device cooling device according to the present invention.
第１図に示すように、本考案の半導体素子用冷
却装置は、基板２０上に実装された半導体素子３
と熱伝導用の伝熱板５とがハンダ４によつて接合
され、且つ該伝熱板５と冷却機構１０とが、可撓
性弾性構造体１の先端部に付設されたフランジ７
によつて前記伝熱板５と直接接合される構成にな
つている。図中、９はフランジ７と伝熱板５とを
結合するためのネジ、６はフランジ７と伝熱板５
間の気密を保つためのＯリングである。 As shown in FIG.
and a heat transfer plate 5 for heat conduction are joined by solder 4, and the heat transfer plate 5 and the cooling mechanism 10 are attached to a flange 7 attached to the tip of the flexible elastic structure 1.
The structure is such that it is directly joined to the heat exchanger plate 5 by. In the figure, 9 is a screw for connecting the flange 7 and the heat exchanger plate 5, and 6 is a screw for connecting the flange 7 and the heat exchanger plate 5.
This is an O-ring to maintain airtightness between the two.
このように構成された本考案の半導体素子用冷
却装置によれば、半導体素子３で発生した熱が、
半導体素子３→ハンダ４→伝熱板５→冷却水８と
いう経路で放熱される。そして熱伝導の障害とな
るエアギヤツプＧは、前記第２図の従来例に示し
た熱伝導性弾性体２を使用しないため、必然的に
存在しなくなる。 According to the semiconductor device cooling device of the present invention configured in this manner, the heat generated in the semiconductor device 3 is
Heat is radiated through the path of semiconductor element 3 → solder 4 → heat transfer plate 5 → cooling water 8. The air gap G, which is an obstacle to heat conduction, inevitably does not exist because the heat conductive elastic body 2 shown in the conventional example shown in FIG. 2 is not used.
なお本半導体素子用冷却装置に使用されるハン
ダ４は、半導体素子３への熱的な影響を配慮し
て、溶融温度が、例えば80℃前後の低融点ハンダ
が用いられる。またＯリング６には、耐熱性の良
好な弾性体材料、例えばシリコン系のゴム等が用
いられる。 Note that the solder 4 used in this semiconductor device cooling device is a low melting point solder having a melting temperature of about 80° C., for example, in consideration of the thermal influence on the semiconductor device 3. Further, the O-ring 6 is made of an elastic material with good heat resistance, such as silicone rubber.
本考案は以上説明したように、半導体素子と伝
熱板とを熱伝導性の良いハンダで接合するととも
に、伝熱板と冷却機構とがフランジを介して着脱
可能に構成されているため。半導体素子の冷却効
率が向上して高密度実装が可能となる。また冷却
機構着脱時の作業も著しく容易化される。
As explained above, the present invention is configured such that the semiconductor element and the heat exchanger plate are bonded with solder having good thermal conductivity, and the heat exchanger plate and the cooling mechanism are detachably attached via the flange. The cooling efficiency of semiconductor elements is improved, enabling high-density packaging. Further, the work of attaching and detaching the cooling mechanism is significantly facilitated.
第１図は本考案による半導体素子用冷却装置の
一実施例を示す要部側断面図、第２図ａ，ｂは従
来の半導体素子冷却装置の構成例を示す要部側断
面図と部分拡大図である。
図中、１は可撓性弾性構造体、２は熱伝導性弾
性体、３は半導体素子、４はハンダ、５は伝熱
板、６はＯリング、７はフランジ、８は冷却水、
９はネジ、１０は冷却機構、２０は基板、Ｇはエ
アギヤツプ、をそれぞれ示す。
Fig. 1 is a side sectional view of the main part showing an embodiment of the semiconductor device cooling device according to the present invention, and Figs. 2 a and b are side sectional views and partially enlarged views of the main part showing an example of the configuration of the conventional semiconductor device cooling device. It is a diagram. In the figure, 1 is a flexible elastic structure, 2 is a thermally conductive elastic body, 3 is a semiconductor element, 4 is solder, 5 is a heat transfer plate, 6 is an O-ring, 7 is a flange, 8 is a cooling water,
9 is a screw, 10 is a cooling mechanism, 20 is a board, and G is an air gap.
Claims (1)
と、基板２０に実装された半導体素子３とを、伝
熱板５を介して結合することによつて、該半導体
素子３の冷却を行う半導体素子用冷却装置の構成
において、 前記伝熱板５と半導体素子３とをハンダ４で接
合して一体構造にするとともに、伝熱板５と冷却
機構１０とを可撓性弾性構造体１の先端部に付設
したフランジ７によつて互いに着脱可能に構成し
たことを特徴とする半導体素子用冷却装置。[Claims for Utility Model Registration] Cooling mechanism 10 comprising a flexible elastic structure 1
and a semiconductor element 3 mounted on a substrate 20, which are coupled via a heat exchanger plate 5 to cool the semiconductor element 3. and the semiconductor element 3 are joined with solder 4 to form an integral structure, and the heat exchanger plate 5 and the cooling mechanism 10 can be attached to and detached from each other by a flange 7 attached to the tip of the flexible elastic structure 1. 1. A cooling device for a semiconductor device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986041711U JPH0539635Y2 (en) | 1986-03-19 | 1986-03-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986041711U JPH0539635Y2 (en) | 1986-03-19 | 1986-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152454U JPS62152454U (en) | 1987-09-28 |
| JPH0539635Y2 true JPH0539635Y2 (en) | 1993-10-07 |
Family
ID=30856955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986041711U Expired - Lifetime JPH0539635Y2 (en) | 1986-03-19 | 1986-03-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539635Y2 (en) |
-
1986
- 1986-03-19 JP JP1986041711U patent/JPH0539635Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62152454U (en) | 1987-09-28 |
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