JPH042156A - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- JPH042156A JPH042156A JP2101782A JP10178290A JPH042156A JP H042156 A JPH042156 A JP H042156A JP 2101782 A JP2101782 A JP 2101782A JP 10178290 A JP10178290 A JP 10178290A JP H042156 A JPH042156 A JP H042156A
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor device
- cooling member
- cooling body
- hollow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000001816 cooling Methods 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000003507 refrigerant Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002826 coolant Substances 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000005219 brazing Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000110 cooling liquid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、トランジスタ、ダイオード等の電力用半導体
素子と冷却装置とを組合わせる電力用半導体装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a power semiconductor device that combines a power semiconductor element such as a transistor or a diode with a cooling device.
従来の電力用半導体装置は、第８図に示すように、トラ
ンジスタ、ダイオード等の電力用半導体素子２は直接に
またはセラミック板３や薄い導体４を介して銅やアルミ
等の金属製基板１０片側に組込まれており、この基板１
の反対側を伝熱用グリースを塗布してネジ１５等で冷却
体８に圧接している。この冷却体８はヒートシンクと称
されるもので、周知のごとくフィンを有する空冷式のも
のや冷媒管を組込んだ液冷式のものである。In a conventional power semiconductor device, as shown in FIG. 8, power semiconductor elements 2 such as transistors and diodes are mounted on one side of a metal substrate 10 made of copper, aluminum, etc., either directly or via a ceramic plate 3 or a thin conductor 4. This board 1
The opposite side is coated with heat transfer grease and is pressed against the cooling body 8 with screws 15 or the like. This cooling body 8 is called a heat sink, and as is well known, it is an air-cooled type having fins or a liquid-cooled type with built-in refrigerant pipes.
また、半導体素子２ａ、２ｂの周囲を保護枠１３で囲い
、その内部に耐候性樹脂１４を充填する。Further, the semiconductor elements 2a and 2b are surrounded by a protective frame 13, and a weather-resistant resin 14 is filled inside the protective frame 13.
しかしこのような従来の電力用半導体装置では、基板１
と冷却体８との圧接部分に熱抵抗が生じやすいのが問題
である。この部分には、基板１への半導体素子２の取付
けほどの寸法精度を確保することが難しく、基板１と冷
却体８の圧接部の機械的反りや、塵芥の混入や、伝熱用
グリースの枯れ等による伝熱性能の低下など、さらに組
立時及び分解修理時の作業上の不安定要素などが問題点
としてあげられる。However, in such conventional power semiconductor devices, the substrate 1
The problem is that thermal resistance tends to occur at the pressure contact portion between the cooling body 8 and the cooling body 8. In this part, it is difficult to ensure the same dimensional accuracy as when attaching the semiconductor element 2 to the substrate 1, and there is a risk of mechanical warping of the press-contact part between the substrate 1 and the cooling body 8, contamination of dust, and heat transfer grease. Problems include a decline in heat transfer performance due to drying, etc., and unstable factors during assembly and disassembly and repair.
本発明の目的は前記従来例の不都合を解消し、半導体素
子内部以外の熱抵抗を極力小さくでき、その結果として
半導体素子の耐熱性能を高く期待できるので同一素子に
よる電力容量の増大や小形化、高倍転化が図れる電力用
半導体装置を提供することにある。The purpose of the present invention is to eliminate the disadvantages of the conventional example, to minimize the thermal resistance of parts other than the inside of the semiconductor element, and as a result, the heat resistance performance of the semiconductor element can be expected to be high. An object of the present invention is to provide a power semiconductor device that can achieve high conversion.
本発明は前記目的を達成するため、冷媒液を通流させる
中空部を有する液冷式の冷却体の外側に、直接または金
属とセラミックを介して電力用半導体素子をロー付けし
たことを要旨とするものである。In order to achieve the above-mentioned object, the gist of the present invention is that a power semiconductor element is brazed to the outside of a liquid-cooled cooling body having a hollow part through which a refrigerant liquid flows, either directly or through metal and ceramic. It is something to do.
〔作用］
現在、一般的に素子のみの熱抵抗は、装置全体の熱抵抗
の１／１０〜１／２０程度といわれている。[Operation] Currently, it is generally said that the thermal resistance of the element alone is about 1/10 to 1/20 of the thermal resistance of the entire device.
また、一般的に素子内の最高許容温度を約１５０゜Ｃ以
下に押さえるべく設計される。Further, the device is generally designed to keep the maximum allowable temperature within the device to about 150° C. or less.
従って、素子以外の熱抵抗をゼロにできれば、同じ半導
体素子で１０〜２０倍の電力を取扱うことができる。Therefore, if the thermal resistance of components other than the element can be reduced to zero, the same semiconductor element can handle 10 to 20 times more power.
本発明によれば、銅やアルミ等の金属製基板を省略して
組立時に接合する圧接部がなくなるので、この部分で生
じる熱抵抗もゼロとなる。According to the present invention, the substrate made of metal such as copper or aluminum is omitted and there is no press-contact portion to be joined during assembly, so the thermal resistance generated in this portion also becomes zero.
以下、図面について本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の第１実施例を示す側面図、第２図は同
上縦断正面図で、図中８は冷却体である。FIG. 1 is a side view showing a first embodiment of the present invention, and FIG. 2 is a longitudinal sectional front view of the same. In the figure, 8 is a cooling body.
該冷却体８は液冷式のもので、冷媒液を通流させる中空
部８ａを有し、端部にホース接続用のテーパーネジによ
るオスまたはメスのカブラ９を受口を介して設けている
。The cooling body 8 is of a liquid-cooled type and has a hollow part 8a through which a refrigerant liquid flows, and a male or female cover 9 with a tapered screw for connecting a hose is provided at the end via a socket. .
図中１１は、冷媒の接触面積を増すため、中空部８ａに
向けて内壁面に突設する複数条の突条を示す。In the figure, reference numeral 11 indicates a plurality of protrusions that protrude from the inner wall surface toward the hollow portion 8a in order to increase the contact area of the refrigerant.
本発明は、このような液冷式の冷却体８の外側にトラン
ジスタ、ダイオード等の電力用半導体素子２ａ、２ｂを
直接にまたはセラミック板３や薄い導体４を介してロー
付けした。In the present invention, power semiconductor elements 2a and 2b such as transistors and diodes are brazed to the outside of such a liquid-cooled cooling body 8 directly or via a ceramic plate 3 or a thin conductor 4.
該セラミック板３は伝熱と絶縁を目的とした板で、非絶
縁の場合は省略できる。The ceramic plate 3 is a plate for the purpose of heat transfer and insulation, and can be omitted if it is not insulated.
前記導体４と半導体素子２ａ、２ｂをそれぞれ冷却体８
の上に重ねてロー付けし、ボンディングワイヤ１２で接
続して第３図に示すような回路を構成する。The conductor 4 and the semiconductor elements 2a and 2b are each connected to a cooling body 8.
They are stacked on top of each other and brazed, and connected with bonding wires 12 to form a circuit as shown in FIG.
さらに、その上から耐候性樹脂１４で半導体素子２ａ、
２ｂを囲繞して保護する。Furthermore, the semiconductor element 2a is covered with a weather-resistant resin 14,
Surround and protect 2b.
このようにして、冷却体８の中空部８ａには水等の冷媒
が通流し、半導体素子２ａ、２ｂを冷却体８が直接的に
冷却する。In this way, a coolant such as water flows through the hollow portion 8a of the cooling body 8, and the cooling body 8 directly cools the semiconductor elements 2a and 2b.
第４図、第５図は本発明の第２実施例を示すもので、冷
却体８の取付は面に開口１６を形成し、この間口１６の
上に直接半導体素子２ａ、２ｂをのせたセラミック板３
をロー付けし、開口１６を該セラミック板３で水密に閉
塞するようにした。4 and 5 show a second embodiment of the present invention, in which a cooling body 8 is mounted on a ceramic plate having an opening 16 formed in its surface, and semiconductor elements 2a and 2b placed directly on this opening 16. Board 3
was brazed so that the opening 16 was watertightly closed with the ceramic plate 3.
このようにす°れば、中空部８ａを通流する水等の冷媒
は開口１６を介して直接セラミック板３に触れ、より冷
媒を半導体素子２ａ、２ｂに近づけることができる。By doing so, the coolant such as water flowing through the hollow portion 8a directly contacts the ceramic plate 3 through the opening 16, and the coolant can be brought closer to the semiconductor elements 2a and 2b.
第６図、第７図は本発明の第３実施例を示すもので、前
記第２実施例の構成に加えて、冷却体８の中空部８ａ内
に発熱量の多い半導体部分のみ凸部１７を設けて流通路
を狭め、流速を増し冷却効果を高めるようにした。6 and 7 show a third embodiment of the present invention, in which, in addition to the structure of the second embodiment, only a convex portion 17 is provided in the hollow portion 8a of the cooling body 8 in the semiconductor portion that generates a large amount of heat. was installed to narrow the flow path and increase the flow velocity to enhance the cooling effect.
なお、前記第１実施例〜第３実施例のすべてにおいて、
冷却体８は液冷式のものであり、風冷式にくらべ比較的
小形のものが多いので、半導体素子２ａ、２ｂをロー付
けするのに技術的な問題点は生じないですむ。また、第
３図の回路例は電力用半導体装置の単なる一例を示すも
ので、実用的には半導体素子ばかりでな（コンデンサ、
抵抗、リアクトル等の周辺回路部品を含んだ半導体装置
である方がより小形高性能化の効果は大きいことは言う
までもない。In addition, in all of the first to third embodiments,
Since the cooling body 8 is of a liquid-cooled type and is often relatively smaller than that of an air-cooled type, there is no technical problem in brazing the semiconductor elements 2a and 2b. Furthermore, the circuit example shown in Fig. 3 is merely an example of a power semiconductor device, and in practical use, it is not limited to only semiconductor elements (capacitors,
It goes without saying that semiconductor devices that include peripheral circuit components such as resistors and reactors are more effective in achieving smaller size and higher performance.
以上述べたように本発明の電力用半導体装置は、半導体
素子内部以外の熱抵抗すなわち半導体素子から冷却体ま
での熱抵抗を極力小さくでき、しかも不安定な部分がな
くなるので、その結果として半導体素子の耐熱性能を高
く期待でき、装置全体を小型化、高信幀化できるもので
ある。As described above, in the power semiconductor device of the present invention, the thermal resistance other than inside the semiconductor element, that is, the thermal resistance from the semiconductor element to the cooling body, can be minimized as much as possible, and unstable parts are eliminated. High heat resistance performance can be expected, and the entire device can be made smaller and more reliable.
第１図は本発明の電力用半導体装置の第１実施例を示す
側面図、第２図は同上縦断正面図、第３図は等価回路図
、第４図は第２実施例を示す縦断側面図、第５図は同上
縦断正面図、第６図は第３実施例を示す縦断側面図、第
７図は同上縦断正面図、第８図は従来例を示す側面図で
ある。
１・・・基板
２．２ａ、２ｂ・・・半導体素子FIG. 1 is a side view showing a first embodiment of a power semiconductor device of the present invention, FIG. 2 is a longitudinal sectional front view of the same, FIG. 3 is an equivalent circuit diagram, and FIG. 4 is a longitudinal sectional side view showing a second embodiment. 5 is a longitudinal sectional front view of the same, FIG. 6 is a longitudinal sectional side view showing the third embodiment, FIG. 7 is a longitudinal sectional front view of the same, and FIG. 8 is a side view of the conventional example. 1...Substrate 2.2a, 2b...Semiconductor element
Claims (1)
外側に、直接または金属とセラミックを介して電力用半
導体素子をロー付けしたことを特徴とする電力用半導体
装置。A power semiconductor device comprising: a power semiconductor element brazed directly or via metal and ceramic to the outside of a liquid-cooled cooling body having a hollow portion through which a refrigerant liquid flows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2101782A JPH042156A (en) | 1990-04-19 | 1990-04-19 | Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2101782A JPH042156A (en) | 1990-04-19 | 1990-04-19 | Power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042156A true JPH042156A (en) | 1992-01-07 |
Family
ID=14309763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2101782A Pending JPH042156A (en) | 1990-04-19 | 1990-04-19 | Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042156A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001082424A1 (en) * | 2000-04-26 | 2001-11-01 | Mitsubishi Heavy Industries, Ltd. | Cooling block, ld device with the cooling block, and solid laser device using the ld device as excitation light source |
| US6621701B2 (en) | 2001-10-09 | 2003-09-16 | Hitachi, Ltd. | Water cooled inverter |
| US6885553B2 (en) | 2002-09-27 | 2005-04-26 | Rockwell Automation Technologies, Inc. | Bus bar assembly for use with a compact power conversion assembly |
| JP2005229095A (en) * | 2004-01-13 | 2005-08-25 | Seiko Epson Corp | Light source device and projection-type display device |
| US6956742B2 (en) | 2002-09-27 | 2005-10-18 | Rockwell Automation Technologies, Inc. | Compact liquid converter assembly |
| US7068507B2 (en) | 2002-09-27 | 2006-06-27 | Rockwell Automation Technologies, Inc. | Compact liquid converter assembly |
| JP2006287017A (en) * | 2005-04-01 | 2006-10-19 | Hitachi Ltd | Cooling jacket |
| JP2007189146A (en) * | 2006-01-16 | 2007-07-26 | Mitsubishi Electric Corp | Heat exchanger |
| JP2008172014A (en) * | 2007-01-11 | 2008-07-24 | Toyota Motor Corp | Semiconductor device cooling structure |
| US7581585B2 (en) | 2004-10-29 | 2009-09-01 | 3M Innovative Properties Company | Variable position cooling apparatus |
| WO2012042849A1 (en) * | 2010-09-30 | 2012-04-05 | ダイキン工業株式会社 | Cooler and refrigeration device provided with same |
| JP2012533868A (en) * | 2009-08-10 | 2012-12-27 | 富士電機株式会社 | Semiconductor module and cooler |
| JP2013012700A (en) * | 2011-05-31 | 2013-01-17 | Sumitomo Heavy Ind Ltd | Power storage module and work machine |
| JP5621908B2 (en) * | 2011-03-10 | 2014-11-12 | トヨタ自動車株式会社 | Cooler |
| JP2019016757A (en) * | 2017-07-11 | 2019-01-31 | ファナック株式会社 | Ld module cooling unit and laser device |
| JP2019067981A (en) * | 2017-10-03 | 2019-04-25 | 浜松ホトニクス株式会社 | Heat sink |
| JP2021083261A (en) * | 2019-11-21 | 2021-05-27 | 株式会社Ｓｏｋｅｎ | Power conversion device |
-
1990
- 1990-04-19 JP JP2101782A patent/JPH042156A/en active Pending
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001082424A1 (en) * | 2000-04-26 | 2001-11-01 | Mitsubishi Heavy Industries, Ltd. | Cooling block, ld device with the cooling block, and solid laser device using the ld device as excitation light source |
| US6621701B2 (en) | 2001-10-09 | 2003-09-16 | Hitachi, Ltd. | Water cooled inverter |
| US6661659B2 (en) | 2001-10-09 | 2003-12-09 | Hitachi, Ltd. | Water cooled inverter |
| US6885553B2 (en) | 2002-09-27 | 2005-04-26 | Rockwell Automation Technologies, Inc. | Bus bar assembly for use with a compact power conversion assembly |
| US6956742B2 (en) | 2002-09-27 | 2005-10-18 | Rockwell Automation Technologies, Inc. | Compact liquid converter assembly |
| US7068507B2 (en) | 2002-09-27 | 2006-06-27 | Rockwell Automation Technologies, Inc. | Compact liquid converter assembly |
| JP2005229095A (en) * | 2004-01-13 | 2005-08-25 | Seiko Epson Corp | Light source device and projection-type display device |
| JP4654664B2 (en) * | 2004-01-13 | 2011-03-23 | セイコーエプソン株式会社 | Light source device and projection display device |
| US7581585B2 (en) | 2004-10-29 | 2009-09-01 | 3M Innovative Properties Company | Variable position cooling apparatus |
| JP2006287017A (en) * | 2005-04-01 | 2006-10-19 | Hitachi Ltd | Cooling jacket |
| JP4551261B2 (en) * | 2005-04-01 | 2010-09-22 | 株式会社日立製作所 | Cooling jacket |
| JP2007189146A (en) * | 2006-01-16 | 2007-07-26 | Mitsubishi Electric Corp | Heat exchanger |
| JP4640183B2 (en) * | 2006-01-16 | 2011-03-02 | 三菱電機株式会社 | Heat exchanger |
| US8125078B2 (en) | 2007-01-11 | 2012-02-28 | Toyota Jidosha Kabushiki Kaisha | Semiconductor element cooling structure |
| JP2008172014A (en) * | 2007-01-11 | 2008-07-24 | Toyota Motor Corp | Semiconductor device cooling structure |
| JP2012533868A (en) * | 2009-08-10 | 2012-12-27 | 富士電機株式会社 | Semiconductor module and cooler |
| US8933557B2 (en) | 2009-08-10 | 2015-01-13 | Fuji Electric Co., Ltd. | Semiconductor module and cooling unit |
| KR101498402B1 (en) * | 2010-09-30 | 2015-03-03 | 다이킨 고교 가부시키가이샤 | Cooler and refrigeration device provided with same |
| CN103119374A (en) * | 2010-09-30 | 2013-05-22 | 大金工业株式会社 | Cooler and refrigeration device provided with same |
| JP2012093076A (en) * | 2010-09-30 | 2012-05-17 | Daikin Industries Ltd | Cooler and refrigeration device including the same |
| AU2011310284B2 (en) * | 2010-09-30 | 2015-01-29 | Daikin Industries, Ltd. | Cooler and refrigerating apparatus including the same |
| WO2012042849A1 (en) * | 2010-09-30 | 2012-04-05 | ダイキン工業株式会社 | Cooler and refrigeration device provided with same |
| US9163885B2 (en) | 2010-09-30 | 2015-10-20 | Daikin Industries, Ltd. | Cooler and refrigerating apparatus including the same |
| JP5621908B2 (en) * | 2011-03-10 | 2014-11-12 | トヨタ自動車株式会社 | Cooler |
| US9072197B2 (en) | 2011-03-10 | 2015-06-30 | Toyota Jidosha Kabushiki Kaisha | Cooling apparatus |
| JP2013012700A (en) * | 2011-05-31 | 2013-01-17 | Sumitomo Heavy Ind Ltd | Power storage module and work machine |
| JP2019016757A (en) * | 2017-07-11 | 2019-01-31 | ファナック株式会社 | Ld module cooling unit and laser device |
| JP2019067981A (en) * | 2017-10-03 | 2019-04-25 | 浜松ホトニクス株式会社 | Heat sink |
| JP2021083261A (en) * | 2019-11-21 | 2021-05-27 | 株式会社Ｓｏｋｅｎ | Power conversion device |
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