JP2001284513A - Power semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To contrive the enhancement of the cooling performance of a power semiconductor device due to a reduction in a thermal resistance in heat conducting paths in the power semiconductor device and the enhancement of the long-period reliability of the device due to a reduction in a thermal stress between members which are used as the heat conducting paths. SOLUTION: A power semiconductor device is provided with insulative substrates 3, which are respectively bonded with a power semiconductor element 2 and are the order of the same linear expansion coefficient as that of the element 2, and a metal base plate 41 for heat dissipation, which is bonded with the substrates 3 and is the order of the same linear expansion coefficient as that of the element 2 and the substrates 3. Cooling flow paths 51, which are circulated a cooling liquid, are provided in the base plate 41.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device used for a power converter or the like, and more particularly to a heat dissipating metal base plate in which the amount of heat generated per power semiconductor element is about 0.1 to 1 kW or more. The present invention relates to a cooling mechanism for a large-capacity power semiconductor device in which the amount of generated heat per unit is about 1 to 10 kW or more.

[0002]

2. Description of the Related Art FIG. 21 shows a general-purpose IGBT
1 shows an example of a conventional power semiconductor device including an (insulated gate bipolar transistor) module and a cooling device. In FIG. 21, 1 is an IGBT module, 2
Is an IGBT element, 3 is an insulating substrate made of alumina or aluminum nitride, etc., on both sides of which a metal foil such as copper or aluminum is adhered, 4 is a heat-dissipating metal base plate made of molybdenum or tungsten, 5 is a heat sink, etc. Cooling system,
Numerals 6 and 7 are solder, and numeral 8 is a compound such as grease. The insulating substrate 3 and the IG
BT element 2 is joined by solders 6 and 7 in order and IGB
A T module 1 is formed, and the IGBT module 1 is connected to a cooling device 5 by a compound 8 and pressed against the cooling device 5. During operation of the IGBT module 1, heat generated in the IGBT element 2 is conducted to the cooling device 5 via the insulating substrate 3 and the heat dissipating metal base plate 4 and is cooled.

Further, as another structure of the power semiconductor device, cooling devices such as heat sinks are mounted on both sides of a power semiconductor module such as a GTO (Gate Turn-Off Thyristor), and respective connecting portions are connected by external pressure. There is a press-stack type.

[0004] In these power semiconductor modules, in order to reduce the thermal stress at the junction due to a temperature change during operation, a member close to the linear expansion coefficient of the IGBT element 2 is used for the main part. 1 IGB
The linear expansion coefficient of the T element 2 is about 2.6 × 10 ⁻⁶ / K in silicon,
The coefficient of linear expansion of the insulating substrate 3 is about 4 × 10 ^-6 /
K, the coefficient of linear expansion of the metal base plate 4 for heat radiation is about 4.8 × 10 ⁻⁶ / K for molybdenum, and about 4.5 × 10 ^{−6 for} tungsten.
/ K. In contrast, a cooling device 5 such as a heat sink
IGBT module 1 is made of copper or aluminum having good thermal conductivity, and has a linear expansion coefficient of about 16.6 × 10 ⁻⁶ / K for copper and about 23.2 × 10 ⁻⁶ / K for aluminum. Is larger by one order than the linear expansion coefficient.

Prior art 2. Further, FIG.
Another example of the conventional power semiconductor device described in Japanese Patent No. 2762 is shown. In FIG. 22, 101 is a power semiconductor element such as a power transistor or a power diode,
Reference numeral 102 denotes an insulating substrate made of a ceramic plate or the like. 1
Numeral 03 denotes a heat dissipation base, in which a cooling liquid channel 131 is formed in a plate-like body such as a copper plate or an aluminum plate. 105
Is an electrode, and 106 is a case.

[0006]

The conventional power semiconductor device is configured as described above. In the prior art 1, the members used in the power semiconductor module and the cooling device have different coefficients of linear expansion. In addition, a difference occurs in thermal elongation due to a temperature change during operation. In addition, the amount of heat generated from the semiconductor element increases with the increase in capacity, and the number of thermal cycles also increases from the viewpoint of long-term reliability. For this reason, in the power semiconductor device shown in FIG. 21, a large difference in thermal elongation occurs between the heat-dissipating metal base plate 4 and the cooling device 5 due to a temperature change occurring during operation, and this is repeated.
The module 1 and the cooling device 5 have a structure in which thermal expansion is released, and are connected and pressed by a compound 8 having low thermal conductivity. For this reason, there was a problem that the heat resistance was high and the cooling performance was low. In addition, even if a cooling device such as a heat sink is attached to both sides of the power semiconductor module, and the respective connection portions are connected by external pressure, the heat conduction between the power semiconductor module and the cooling device is performed by contact. Therefore, the true contact area is extremely small with respect to the apparent contact area, and therefore, there is a problem that the heat resistance is high and the cooling performance is low.

Further, in the prior art 2, the cooling liquid is circulated through the heat radiating base 103 to cool the heat radiating base 103, so that it is possible to reduce the size and improve the cooling capacity as compared with using a heat sink. There is a large difference in thermal elongation between the heat dissipation base 103 made of aluminum and the power semiconductor element 101 or the insulating substrate 102, and when these are joined with solder having high thermal conductivity, there is a possibility that a crack may occur at the joint. In the case of connecting and pressing with a compound 8 having low thermal conductivity as in the prior art 1, there is a problem that the thermal resistance is high and the cooling performance is low.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and has improved cooling performance by reducing thermal resistance in a heat conduction path of a power semiconductor device. It is intended to improve long-term reliability by reducing thermal stress between members.

[0009]

According to the present invention, there is provided a power semiconductor device, comprising: an insulating substrate having a power semiconductor element bonded thereto and having a coefficient of linear expansion of the same order as the power semiconductor element; A heat-dissipating metal base plate having an expansion coefficient in the same order as the power semiconductor element and the insulating substrate is provided, and a coolant flow path through which a coolant flows is provided in the heat-dissipating metal base plate.

[0010] The coolant flow path is formed by a groove provided on the surface of the metal base plate for heat dissipation on the side opposite to the power semiconductor element.

Further, a lid is disposed on the side of the metal base plate for heat radiation opposite to the power semiconductor element in order to cover the groove.

A plurality of grooves are arranged in parallel, and a coolant inflow manifold and a coolant outflow manifold are provided in communication with at least two of the grooves.

[0013] The manifold is a groove-shaped recess formed in at least one of the metal base plate for heat radiation and the lid.

The groove extends from one end to the other end of the heat-dissipating metal base plate, and the manifold is a cylindrical member provided so as to cover the heat-dissipating metal base plate and the end face of the lid, the groove being opened. Is the body.

The manifold is provided with a joint for coupling to an external coolant pipe, and the cross-sectional area of the flow passage of the manifold is reduced as the distance from the joint increases.

Further, the metal base plate for heat radiation is made of molybdenum or tungsten.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a plan view showing a configuration of a power semiconductor device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line AA of FIG. 1, and FIG.
It is a line sectional view. In the figure, reference numeral 2 denotes a power semiconductor element, for example, an IGBT element. The coefficient of linear expansion of silicon is about 2.6 × 10 ⁻⁶ / K. Reference numeral 3 denotes an insulating substrate made of aluminum nitride or the like having a metal foil such as copper or aluminum bonded to both surfaces. The coefficient of linear expansion of aluminum nitride is about 4 × 10 ⁻⁶ / K, which is the same as that of the power semiconductor element 2. It is an order. Reference numeral 41 denotes a heat dissipating metal base plate having the same linear expansion coefficient as that of the power semiconductor element 2 and the insulating substrate 3, such as molybdenum having a linear expansion coefficient of about 4.8 × 10 ⁻⁶ / K or about 4 It is made of tungsten having a density of 0.5 × 10 ⁻⁶ / K. Reference numeral 51 denotes a groove for forming a cooling liquid flow path and through which the cooling liquid flows. A plurality of grooves 51 are provided in parallel on the surface of the metal base plate 41 for heat dissipation on the side opposite to the power semiconductor element 2. Reference numeral 42 denotes a lid disposed on the anti-power semiconductor element 2 side of the heat-dissipating metal base plate 41 so as to cover the groove 51. It is a board. Numerals 52 and 53 are a coolant inflow manifold and a coolant outflow manifold provided in communication with the plurality of grooves 51, respectively. In the present embodiment, the groove 51 is provided at the center of the metal base plate 41 for heat radiation, and the manifolds 52 and 53 are formed on both the metal base plate 41 for heat radiation and the lid 42 by communicating with both ends of the groove 51. It is a groove-shaped recessed portion. 54 and 55 are manifolds 52 and 53 and an external coolant pipe (not shown)
And joints 6 and 7 are solder, and 9 is a solder or an adhesive.

The power semiconductor element 2 is joined to the insulating substrate 3 with solder 6, and the insulating substrate 3 is joined to the heat radiating metal base plate 41 with solder 7,
Is joined to the lid 42 by a solder or an adhesive 9 or the like. The amount of heat generated per IGBT element is about 0.1
In this embodiment, six IGBT elements 1 are arranged on the metal base plate 41 for heat radiation.

FIG. 4 is an enlarged sectional view showing the vicinity of the joint. The joints 54 and 55 are formed of, for example, a pipe connection fitting with a tapered thread, and
Hole 1 provided in communication with the manifolds 52 and 53 on the side
An external pipe is connected to the base via a taper screw.

In such a configuration, the cooling liquid flows through the flow path surrounded by the groove 51 and the lid 42 while directly contacting the heat-dissipating metal base plate 41 to cool the heat-dissipating metal base plate 41. I do. As the cooling liquid, for example, water or perfluorocarbon which is a fluorine-based inert liquid is used.

Next, an example of the dimension and shape of the groove 51 will be described. 5 is an enlarged plan view showing a main part of FIG. 1, that is, the vicinity of one of the manifolds. FIG. 6 is a sectional view taken along line AA of FIG. 5, and FIG. 7 is a sectional view taken along line BB of FIG. Since the heat-dissipating metal base plate 41 and the lid 42 are made of an expensive material such as molybdenum or tungsten having a small linear expansion coefficient, the thickness is about 3 mm (2.75 m) in consideration of economy.
m). The size of the groove 51 is 1.0 mm in width × 1.5 mm in height in consideration of cooling performance, and the interval between the grooves 51, that is, the thickness of the fin between the grooves 51 is determined by the fin efficiency, workability, and aging reliability. Considering the nature, 0.
5 mm. Also, the manifold 53 (52)
Has a width of 2.5 mm × a height of 3.5 mm.

Next, an example of the dimensions and shape of the entire power semiconductor device will be described. FIG. 8 is an enlarged cross-sectional view showing a main part of the power semiconductor device, and shows the right side from the point BB in FIG. The thickness of the power semiconductor element 2 is 0.6 m
m, the thickness of the insulating substrate 3 is 1.8 mm, and the dimensions and shapes of the metal base plate 41 for heat radiation and the thickness of the lid 42 are the same as those in FIGS. In addition, for easy understanding, FIG.
2 and FIG. 2 show a state in which five grooves 51 are provided, but in reality, as shown in FIG.
9 × 2 = 18 over the range. The width of the insulating substrate 3 is 25 mm, and the width of the IGBT 2 is 2 mm.
0 mm. Thus, the groove 51 serving as the coolant flow path is
Is located at a position corresponding to the IGBT 2 and the insulating substrate 3,
They are arranged over a similar or slightly larger range.

During operation of the power semiconductor device, heat generated in the power semiconductor element 2 is conducted from the insulating substrate 3 to the metal base plate 41 for heat dissipation and cooled. At this time, since the heat-dissipating metal base plate 41 is directly cooled by the cooling liquid, the heat resistance is lower than that in the case where the cooling device 5 is joined via the conventional compound 8 as shown in FIG. Performance can be improved. Further, since the linear coefficient of thermal expansion of the heat-dissipating metal base plate 41 is as small as the power semiconductor element 2 and the insulating substrate 3, the heat-dissipating metal base plate 4
1, the thermal expansion difference between the insulating substrate 3 and the power semiconductor element 2 is small, so that no excessive thermal stress is generated in the heat-dissipating metal base plate 41 and the solders 7 and 6 are not damaged. And high long-term reliability.

Since a thin plate is used for the heat dissipating metal base plate 41, the flow area of the coolant in the manifolds 52 and 53, that is, the cross-sectional area of the flow path, may not be large. In that case, the manifolds 52 and 53 may be used. The flow rate of the cooling liquid flowing through the flow passage may increase, and the flow resistance may become too high. Therefore, in this embodiment, as shown in FIG. 1, manifolds 52 and 53 provided at both ends of the groove 51 are provided.
Is divided into small units for each small unit of the power semiconductor element 2, and a joint portion 5 for coupling to an external pipe is formed.
4 and 55 are also provided corresponding to the respective manifolds 52 and 53, so that the coolant flowing through the grooves 51 of the metal base plate 41 for heat radiation flows in parallel according to the division. FIG. 1 shows a case of three divisions, and three sets of manifolds 52 and 53 are provided.

Embodiment 2 FIG. 9 is a plan view showing a configuration of a power semiconductor device according to a second embodiment of the present invention.
9 is a sectional view taken along line AA of FIG. 9, and FIG. 11 is a sectional view taken along line BB of FIG. In the first embodiment, the manifolds 52, 5
Although the case where 3 is divided into three is shown, in the present embodiment, common manifolds 52 and 53 are used. As described in the first embodiment, a thin plate is used for the metal base plate 41 for heat dissipation. However, the width of the plate is increased to increase the width of the manifolds 52 and 53, and the thickness of the manifold 5 is increased.
By increasing the flow area of the coolant in 2 and 53, the flow rate of the coolant flowing through the manifolds 52 and 53 is reduced, and if the flow resistance is not increased, the number of divisions of the manifolds 52 and 53 can be reduced. The manifolds 52 and 53 may not be divided as in the present embodiment. If the manifolds 52 and 53 are not divided, the inlet and outlet joints 54 and 55 for coupling to the external coolant pipes are also provided one by one to flow into and out of the groove 51 of the metal base plate 41 for heat radiation. The number of passes of the cooling liquid to be performed can be reduced to one, and the piping for the cooling liquid can be prevented from becoming complicated.

In FIG. 9, the inlet side and outlet side joints 54 and 55 for connecting to an external coolant pipe are shown.
Are provided at the ends of the manifolds 52 and 53, respectively, but may be provided at the center so that the coolant flows to both sides.

Although the coolant flow area in the manifolds 52 and 53, that is, the cross-sectional area of the flow path is made constant in FIGS. 9 and 10, in order to make the flow rate of the coolant flowing through the groove 51 as uniform as possible, The coolant flow area of 52, 53, that is, the cross-sectional area of the flow path
55 may be maximized and reduced as the distance from the joints 54 and 55 increases.

Embodiment 3 FIG. 12 is an enlarged plan view showing a main part of a power semiconductor device according to a third embodiment of the present invention, that is, the vicinity of one of the manifolds.
12 is a sectional view taken along line AA of FIG. 12, and FIG. 14 is a sectional view taken along line BB of FIG. In these figures, the power semiconductor element and the insulating substrate are omitted. In the figure,
Reference numeral 61 denotes an O-ring for sealing, which is formed of, for example, silicone rubber. Reference numeral 62 denotes an O-ring groove formed on the lid 42 so as to surround the groove 51 and the manifolds 53 and 52 (not shown). 63 is a lid member.

In each of the above embodiments, the case where the lid 42 is made of the same molybdenum or tungsten as the metal base plate 41 for heat radiation and the two are joined by solder or adhesive has been described. The body 42 is made of, for example, copper or aluminum which has good thermal conductivity and is inexpensive.
A groove 62 for a ring is formed. The O-ring 61 is disposed in the groove 62 for sealing, and the groove 62 is connected to the metal base plate 41 for heat dissipation by bolting or the like.

Further, the thickness of the lid 42 is utilized by utilizing the thickness of the lid 42.
The size of the manifold 53 is large enough. In the present embodiment, a manifold 53 having a sufficient size is formed on the lid 42 without shortening the groove 51 serving as the cooling fluid flow path or increasing the width of the metal base plate 41 for heat radiation and the lid 42. To be formed, the manifold 53 formed on the lid 42 side has a shape as shown in a cross-sectional view in FIG. 14 and is opened on the anti-radiation metal base plate 41 side. It is covered with and covered. For example, the same material as the lid 42 is used for the lid member 63, and the lid member 63 is joined to the lid 42 by, for example, solder, adhesive, welding, or the like so as to close the opening of the manifold 53. The other manifold 52 is not shown, but has the same configuration as the manifold 53.

With this configuration, the cover 42
Inexpensive materials can be used, and it is economical. Also,
Since an inexpensive material can be used, the thickness of the lid 42 can be increased, and the manifold 5 having a sufficient depth in the lid 42 and therefore having a sufficient flow path cross-sectional area can be used.
2, 53 can also be formed.

Note that a gasket may be used instead of the O-ring 61 as a shielding material. FIGS. 15 to 17 show a case where a gasket is used. 15 is a plan view showing another configuration of the main part of the power semiconductor device according to the fourth embodiment of the present invention, FIG. 16 is a sectional view taken along line AA of FIG. 15, and FIG. 17 is a sectional view taken along line BB of FIG. FIG. In these figures, the power semiconductor element and the insulating substrate are omitted. In the figure, reference numeral 64 denotes a gasket, which is made of, for example, silicone rubber. In the figure, the groove 6
2 shows a case where a gasket is inserted,
May not be provided.

In the first and second embodiments, the manifolds 52 and 53 correspond to the metal base plate 41 for heat radiation and the lid 4.
In the third embodiment, the case in which both are formed on both sides of the cover body 42 has been described.
The heat radiation metal base plate 41 may be formed only.

Embodiment 4 18 is a plan view showing a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention, FIG. 19 is a sectional view taken along line AA of FIG. 18, and FIG.
FIG. 7 is a sectional view taken along line BB of FIG. In the present embodiment, the groove 51 extends from one end to the other end of the heat-dissipating metal base plate 41,
The manifolds 52 and 53 are cylindrical bodies provided so as to cover the end surfaces of the metal base plate 41 for heat radiation and the lid 42 in which the groove 51 is opened. That is, the manifolds 52 and 53
Are attached to two opposing sides of the metal base plate 41 for heat dissipation and the lid 42, and are made of the same material as the metal base plate 41 for heat dissipation 41 and the lid 42, such as molybdenum or tungsten, having a small linear expansion coefficient. The pipe is formed by processing the mating surface, and the pipe is joined to the metal base plate 41 for heat radiation and the lid body 42 by solder, adhesive, welding or the like.

By using such metal pipes for the manifolds 52 and 53, it is possible to increase the cross-sectional area of the flow path, that is, the flow area of the cooling liquid.
Since the flow rate of the coolant flowing through the fluids 2 and 53 can be reduced to prevent the flow resistance from increasing, the manifolds 52 and 53 do not have to be divided, and the coolant piping can be prevented from becoming complicated. .

Although not shown, the inlet and outlet joints for connecting to the external coolant pipe may be provided at either the end or the center of the manifolds 52, 53.

The cross-sectional area of the flow passage of the manifolds 52 and 53, that is, the area of the coolant flowing therethrough may be constant, but in order to make the flow rate of the coolant flowing through the groove 51 as uniform as possible.
The flow path cross-sectional area of the manifolds 52 and 53 is
4 and 55 may be maximized and reduced as the distance from the joints 54 and 55 increases.

The cross section of the metal pipes serving as the manifolds 52 and 53 is generally circular. However, the present invention is not limited to this.

In each of the above-described embodiments, the case where no groove is provided in the lid 42 has been described. However, a groove is provided in the lid 42 at a position corresponding to the groove 51 of the metal base plate 41 for heat radiation. Alternatively, the flow area of the cooling liquid, that is, the flow path cross-sectional area can be increased.

[0040]

As described above, according to the present invention, an insulated substrate having a power semiconductor element bonded thereto and having a linear expansion coefficient of the same order as the power semiconductor element, and an insulated substrate having the insulating substrate bonded and having a linear expansion coefficient Is provided with a heat-dissipating metal base plate of the same order as the power semiconductor element and the insulating substrate, and the heat-dissipating metal base plate is provided with a coolant flow path through which a coolant flows. The cooling performance can be improved by reducing the thermal resistance in the path, and the long-term reliability can be improved by reducing the thermal stress between the members forming the heat conduction path.

Further, since the cooling liquid flow path is formed by a groove provided on the surface of the heat radiating metal base plate on the side opposite to the power semiconductor element, the manufacturing is easy and the cooling performance can be improved by the fin effect.

Further, since the lid is arranged on the side of the metal base plate for heat dissipation opposite to the power semiconductor element in order to cover the groove, manufacturing is easy.

Also, a plurality of grooves are arranged in parallel, and a coolant inflow manifold and a coolant outflow manifold are provided so as to communicate with at least two of the grooves. Flow can be performed, pressure loss can be kept low, and the flow path can be simplified.

Further, since the manifold is a groove-shaped recess formed in at least one of the metal base plate for heat radiation and the lid, the number of parts is small and the manufacture is easy.

The groove extends from one end to the other end of the metal base plate for heat radiation, and the manifold has a cylindrical shape provided to cover the end surfaces of the metal base plate for heat radiation with the groove opened and the lid. Since it is a body, the flow cross-sectional area of the manifold can be increased, the coolant can flow in parallel through many grooves, the pressure loss can be reduced, and the flow path can be simplified. .

Further, the manifold is provided with a joint portion for connecting to an external coolant pipe. The cross-sectional area of the manifold is reduced as the distance from the joint portion increases, so that the cooling flow through the groove is reduced. The flow rate of the liquid can be made uniform.

Further, since the metal base plate for heat radiation is made of molybdenum or tungsten, its coefficient of linear expansion is in the same order as the coefficient of linear expansion of the insulated substrate and the power semiconductor element to be joined, and the generated thermal stress Is small,
The long-term reliability of the joint can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration of a power semiconductor device according to a first embodiment of the present invention.

FIG. 2 shows a configuration of the power semiconductor device according to the first embodiment of the present invention, and is a cross-sectional view taken along line AA of FIG.

FIG. 3 shows a configuration of the power semiconductor device according to the first embodiment of the present invention, and is a cross-sectional view taken along line BB of FIG.

FIG. 4 is an enlarged cross-sectional view showing a joint according to the first embodiment of the present invention.

FIG. 5 is an enlarged plan view showing the vicinity of a manifold according to the first embodiment of the present invention.

FIG. 6 relates to the first embodiment of the present invention,
It is a line sectional view.

FIG. 7 relates to the first embodiment of the present invention,
It is a line sectional view.

FIG. 8 is an enlarged cross-sectional view showing a main part of the power semiconductor device according to the first embodiment of the present invention;

FIG. 9 is a plan view showing a configuration of a power semiconductor device according to a second embodiment of the present invention.

10 shows a configuration of a power semiconductor device according to a second embodiment of the present invention, and is a cross-sectional view taken along line AA of FIG.

11 shows a configuration of a power semiconductor device according to a second embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG.

FIG. 12 is a plan view showing a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention.

13 shows a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention, and is a cross-sectional view taken along line AA of FIG.

14 shows a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention, and is a cross-sectional view taken along line BB of FIG.

FIG. 15 is a plan view showing another configuration of the main part of the power semiconductor device according to the third embodiment of the present invention.

16 shows a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention, and is a cross-sectional view taken along line AA of FIG.

17 shows a configuration of a main part of a power semiconductor device according to a third embodiment of the present invention, and is a cross-sectional view taken along line BB of FIG.

FIG. 18 is a plan view showing a configuration of a main part of a power semiconductor device according to a fourth embodiment of the present invention.

FIG. 19 shows a configuration of a main part of a power semiconductor device according to a fourth embodiment of the present invention, and is a cross-sectional view taken along line AA of FIG. 18;

20 shows a configuration of a main part of a power semiconductor device according to a fourth embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG. 18;

FIG. 21 is a front view showing a configuration of a power semiconductor device according to Conventional Technique 1.

FIG. 22 is a front view showing a configuration of a power semiconductor device according to Conventional Technique 2.

[Explanation of symbols]

1 IGBT module, 2 power semiconductor device, 3
Insulating substrate, 4, 41 metal base plate for heat dissipation, 42 lid, 5 cooling device, 51 groove, 52 manifold for cooling liquid inflow, 53 manifold for cooling liquid outflow, 54 inlet side joint part, 55 outlet side joint part, 6,
7, 9 solder, 8 compound, 61 O-ring, 6
2 groove, 63 lid member, 64 gasket, 101 power semiconductor element, 102 insulating substrate, 103 heat dissipation base, 105 electrode, 106 case, 131 cooling liquid flow path, 142 through hole.

Claims (8)

[Claims] An insulating substrate to which a power semiconductor element is bonded and having a linear expansion coefficient of the same order as the power semiconductor element; and an insulating substrate to which the insulating substrate is bonded and having a linear expansion coefficient of the power semiconductor element and the insulating substrate. A power semiconductor device comprising: a heat-dissipating metal base plate of the same order; and a cooling-fluid flow path through which a coolant flows in the heat-dissipating metal base plate. 2. The power semiconductor device according to claim 1, wherein the cooling liquid flow path is formed by a groove provided on a surface of the metal base plate for heat dissipation on a side opposite to the power semiconductor element. 3. The power semiconductor device according to claim 2, wherein a lid is disposed on a side of the metal base plate for heat dissipation opposite to the power semiconductor element to cover the groove. 4. A plurality of grooves are arranged in parallel,
4. The power semiconductor device according to claim 2, wherein a coolant inflow manifold and a coolant outflow manifold are provided in communication with at least two of the grooves. 5. The power semiconductor device according to claim 4, wherein the manifold is a groove-shaped recess formed in at least one of the metal base plate for heat radiation and the lid. 6. The groove extends from one end to the other end of the metal base plate for heat radiation, and the manifold has a cylindrical shape provided to cover the end surfaces of the metal base plate for heat radiation with the groove opening and the lid. The power semiconductor device according to claim 4, wherein the power semiconductor device is a body. 7. A manifold, wherein the manifold is provided with a joint portion for connecting to an external coolant pipe, and a flow passage cross-sectional area of the manifold is reduced as the distance from the joint portion increases. 7. The power semiconductor device according to any one of 4 to 6. 8. The power semiconductor device according to claim 1, wherein the heat dissipating metal base plate is made of molybdenum or tungsten.