JPH0531311B2 - - Google Patents
Info
- Publication number
- JPH0531311B2 JPH0531311B2 JP59176957A JP17695784A JPH0531311B2 JP H0531311 B2 JPH0531311 B2 JP H0531311B2 JP 59176957 A JP59176957 A JP 59176957A JP 17695784 A JP17695784 A JP 17695784A JP H0531311 B2 JPH0531311 B2 JP H0531311B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- impurity density
- low impurity
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012535 impurity Substances 0.000 claims description 167
- 238000010791 quenching Methods 0.000 claims description 96
- 230000006698 induction Effects 0.000 claims description 88
- 230000003287 optical effect Effects 0.000 claims description 79
- 230000000171 quenching effect Effects 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 21
- 230000001960 triggered effect Effects 0.000 claims description 14
- 230000003068 static effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims 28
- 230000001678 irradiating effect Effects 0.000 claims 18
- 239000002019 doping agent Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
- H01L31/1116—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor of the static induction type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59176957A JPS6154668A (ja) | 1984-08-25 | 1984-08-25 | 光トリガ・光クエンチ静電誘導サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59176957A JPS6154668A (ja) | 1984-08-25 | 1984-08-25 | 光トリガ・光クエンチ静電誘導サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6154668A JPS6154668A (ja) | 1986-03-18 |
| JPH0531311B2 true JPH0531311B2 (fr) | 1993-05-12 |
Family
ID=16022671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59176957A Granted JPS6154668A (ja) | 1984-08-25 | 1984-08-25 | 光トリガ・光クエンチ静電誘導サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6154668A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2659931B2 (ja) * | 1985-06-29 | 1997-09-30 | 財団法人 半導体研究振興会 | 光制御電力変換装置 |
| JPS6384066A (ja) * | 1986-09-26 | 1988-04-14 | Semiconductor Res Found | 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法 |
-
1984
- 1984-08-25 JP JP59176957A patent/JPS6154668A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154668A (ja) | 1986-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |