JPH0531289B2 - - Google Patents
Info
- Publication number
- JPH0531289B2 JPH0531289B2 JP21772788A JP21772788A JPH0531289B2 JP H0531289 B2 JPH0531289 B2 JP H0531289B2 JP 21772788 A JP21772788 A JP 21772788A JP 21772788 A JP21772788 A JP 21772788A JP H0531289 B2 JPH0531289 B2 JP H0531289B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- protective film
- mask
- resist
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63217727A JPH0265224A (ja) | 1988-08-31 | 1988-08-31 | Ｘ線マスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63217727A JPH0265224A (ja) | 1988-08-31 | 1988-08-31 | Ｘ線マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0265224A JPH0265224A (ja) | 1990-03-05 |
| JPH0531289B2 true JPH0531289B2 (cs) | 1993-05-12 |
Family
ID=16708796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63217727A Granted JPH0265224A (ja) | 1988-08-31 | 1988-08-31 | Ｘ線マスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265224A (cs) |
-
1988
- 1988-08-31 JP JP63217727A patent/JPH0265224A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0265224A (ja) | 1990-03-05 |
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