JPH0531102B2 - - Google Patents
Info
- Publication number
- JPH0531102B2 JPH0531102B2 JP63054725A JP5472588A JPH0531102B2 JP H0531102 B2 JPH0531102 B2 JP H0531102B2 JP 63054725 A JP63054725 A JP 63054725A JP 5472588 A JP5472588 A JP 5472588A JP H0531102 B2 JPH0531102 B2 JP H0531102B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- temperature
- package
- resistance value
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 53
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 31
- 229910052697 platinum Inorganic materials 0.000 claims description 22
- 238000012360 testing method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000004971 IR microspectroscopy Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003057 platinum Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000037408 Device failure Diseases 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001915 proofreading effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
- 235000002020 sage Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2896—Testing of IC packages; Test features related to IC packages
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23595 | 1987-03-09 | ||
| US07/023,595 US4734641A (en) | 1987-03-09 | 1987-03-09 | Method for the thermal characterization of semiconductor packaging systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63243856A JPS63243856A (ja) | 1988-10-11 |
| JPH0531102B2 true JPH0531102B2 (enExample) | 1993-05-11 |
Family
ID=21816093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63054725A Granted JPS63243856A (ja) | 1987-03-09 | 1988-03-08 | 半導体パッケージの熱特性測定方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4734641A (enExample) |
| EP (1) | EP0283778A1 (enExample) |
| JP (1) | JPS63243856A (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2606887B1 (fr) * | 1986-11-18 | 1989-01-13 | Thomson Semiconducteurs | Circuit de mesure des caracteristiques dynamiques d'un boitier pour circuit integre rapide, et procede de mesure de ces caracteristiques dynamiques |
| US4902139A (en) * | 1988-04-13 | 1990-02-20 | General Electric Company | Apparatus and method for measuring the thermal performance of a heated or cooled component |
| US4944035A (en) * | 1988-06-24 | 1990-07-24 | Honeywell Inc. | Measurement of thermal conductivity and specific heat |
| JP3151203B2 (ja) * | 1988-11-23 | 2001-04-03 | テキサス インスツルメンツ インコーポレイテツド | 集積回路の自己検査装置 |
| US5177696A (en) * | 1989-12-28 | 1993-01-05 | Honeywell Inc. | Method of determination of gas properties at reference conditions |
| US5187674A (en) * | 1989-12-28 | 1993-02-16 | Honeywell Inc. | Versatile, overpressure proof, absolute pressure sensor |
| US4994737A (en) * | 1990-03-09 | 1991-02-19 | Cascade Microtech, Inc. | System for facilitating planar probe measurements of high-speed interconnect structures |
| US5263775A (en) * | 1991-02-01 | 1993-11-23 | Aetrium, Inc. | Apparatus for handling devices under varying temperatures |
| CA2073899A1 (en) * | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
| CA2073886A1 (en) * | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
| CA2073916A1 (en) * | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
| CA2073896A1 (en) * | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
| US5302022A (en) * | 1992-12-22 | 1994-04-12 | Vlsi Technology, Inc. | Technique for measuring thermal resistance of semiconductor packages and materials |
| GB9323417D0 (en) * | 1993-11-12 | 1994-01-05 | Univ Waterloo | Non-intrusive state observation of vlsi circuits using thermal actuation |
| BE1008808A3 (nl) * | 1994-10-19 | 1996-08-06 | Imec Inter Uni Micro Electr | Inrichting en werkwijze voor het evalueren van de thermische weerstand van een halfgeleider-component. |
| US5574109A (en) * | 1995-02-01 | 1996-11-12 | Bridgestone Corporation | Aminoalkyllithium compounds containing cyclic amines and polymers therefrom |
| US6232789B1 (en) | 1997-05-28 | 2001-05-15 | Cascade Microtech, Inc. | Probe holder for low current measurements |
| US6046433A (en) * | 1998-09-11 | 2000-04-04 | Linear Technology Corporation | Monolithic integrated circuit die heater and methods for using same |
| US6203191B1 (en) * | 1998-10-28 | 2001-03-20 | Speculative Incorporated | Method of junction temperature determination and control utilizing heat flow |
| US6590405B2 (en) * | 1999-04-21 | 2003-07-08 | Advantest, Corp | CMOS integrated circuit and timing signal generator using same |
| US6433567B1 (en) * | 1999-04-21 | 2002-08-13 | Advantest Corp. | CMOS integrated circuit and timing signal generator using same |
| DE20114544U1 (de) | 2000-12-04 | 2002-02-21 | Cascade Microtech, Inc., Beaverton, Oreg. | Wafersonde |
| US6637930B2 (en) * | 2001-10-02 | 2003-10-28 | International Rectifier Corporation | Method for calculating the temperature rise profile of a power MOSFET |
| EP1509776A4 (en) | 2002-05-23 | 2010-08-18 | Cascade Microtech Inc | PROBE TO TEST ANY TESTING EQUIPMENT |
| US6984064B1 (en) * | 2002-07-31 | 2006-01-10 | Advanced Micro Devices, Inc. | Thermal transfer measurement of an integrated circuit |
| US6724205B1 (en) | 2002-11-13 | 2004-04-20 | Cascade Microtech, Inc. | Probe for combined signals |
| US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
| DE112004002554T5 (de) | 2003-12-24 | 2006-11-23 | Cascade Microtech, Inc., Beaverton | Active wafer probe |
| DE202005021435U1 (de) | 2004-09-13 | 2008-02-28 | Cascade Microtech, Inc., Beaverton | Doppelseitige Prüfaufbauten |
| US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
| US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
| US7449899B2 (en) | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
| WO2006137979A2 (en) | 2005-06-13 | 2006-12-28 | Cascade Microtech, Inc. | Wideband active-passive differential signal probe |
| US7327150B2 (en) * | 2005-10-11 | 2008-02-05 | Intel Corporation | Integrated circuit package resistance measurement |
| DE112007001399T5 (de) | 2006-06-09 | 2009-05-07 | Cascade Microtech, Inc., Beaverton | Messfühler für differentielle Signale mit integrierter Symmetrieschaltung |
| US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
| US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
| US7443186B2 (en) | 2006-06-12 | 2008-10-28 | Cascade Microtech, Inc. | On-wafer test structures for differential signals |
| US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
| US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
| JP2011253971A (ja) * | 2010-06-03 | 2011-12-15 | Hitachi Ltd | 電子式制御装置及びその余寿命予測方法 |
| CN102207534B (zh) * | 2011-03-18 | 2013-04-17 | 华南师范大学 | 利用pn结测量LED热阻的方法及其装置 |
| KR101900378B1 (ko) * | 2012-05-25 | 2018-11-02 | 에스케이하이닉스 주식회사 | 리프레쉬회로 |
| CN105004752B (zh) * | 2015-08-12 | 2017-06-27 | 中国电子科技集团公司第四十七研究所 | 多管芯器件热阻测试方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982218A (en) * | 1974-09-19 | 1976-09-21 | Corning Glass Works | Temperature sensing device and method |
| US4186368A (en) * | 1978-05-30 | 1980-01-29 | Tektronix, Inc. | Wide range, quick response temperature probe sensor |
| JPS56161649A (en) * | 1980-05-16 | 1981-12-12 | Fujitsu Ltd | Measuring method of thermal resistance of semiconductor package |
| JPS5958828A (ja) * | 1982-09-28 | 1984-04-04 | Fujitsu Ltd | 樹脂封止型半導体装置のスクリ−ニング法 |
| US4695578A (en) * | 1984-01-25 | 1987-09-22 | Glaxo Group Limited | 1,2,3,9-tetrahydro-3-imidazol-1-ylmethyl-4H-carbazol-4-ones, composition containing them, and method of using them to treat neuronal 5HT function disturbances |
| IN165267B (enExample) * | 1984-07-31 | 1989-09-09 | Rosemount Inc | |
| JPS61181103A (ja) * | 1985-02-06 | 1986-08-13 | シャープ株式会社 | 白金測温抵抗体 |
| JPS61188901A (ja) * | 1985-02-16 | 1986-08-22 | 株式会社日本自動車部品総合研究所 | 流量センサ用膜式抵抗 |
| US4684884A (en) * | 1985-07-02 | 1987-08-04 | Gte Communication Systems Corporation | Universal test circuit for integrated circuit packages |
-
1987
- 1987-03-09 US US07/023,595 patent/US4734641A/en not_active Expired - Fee Related
-
1988
- 1988-03-02 EP EP88103148A patent/EP0283778A1/en not_active Withdrawn
- 1988-03-08 JP JP63054725A patent/JPS63243856A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4734641A (en) | 1988-03-29 |
| EP0283778A1 (en) | 1988-09-28 |
| JPS63243856A (ja) | 1988-10-11 |
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